US3619614A
Expired / Lapsed
US
⏱️ 0.0 years remaining
An infrared intensity detector
Assignee: Panasonic Holdings Corp
•
Filing: 1969-12-19
•
Granted: 1971-11-09
•
Expires: 1989-12-19
Abstract
Abstract An infrared intensity detector having a pair of detector elements, one shielded from and the other exposed to an incoming infrared radiation, and a thermostatted black body reference source of a characteristic temperature. The detector elements are made of a semiconductor having a remarkable temperature dependence of resistivity within a limited temperature range around the characteristic temperature. The detector offers increased detection sensitivity and finds a wide variety of applications especially where it is intended to measure an object of relatively low temperature.
Inventors
- 👤 Eiso Yamaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 10:19
CPC Classifications
F; F16; F16D; F16D3/00; F16D3/16; F16D3/20; F16D3/22; F16D3/223; F16D3/2233; F16D3/224; G; G01; G01J; G01J5/00; G01J5/10; G01J5/20; H; H01; H01C; H01C7/00; H01C7/04; F16D2003/22303; F16D2003/22309
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
111 words
An infrared intensity detector for detecting the intensity of an infrared radiation, comPrising a hollow furnace having a resistive film coated on the inside surface thereof, first and second detector elements made of a semiconductive material having a steep negative temperature characteristic in resistivity within a limited temperature range around a critical temperature, said elements being disposed in said furnace and said first element facing infrared radiation to be detected for detecting the intensity thereof and said second element being shielded from the infrared radiation, and a temperature control amplifier for maintaining the temperature in said furnace at said critical temperature connected to said detector element and to said resistive film.
Claim 2
Dependent Claim
111 words
An infrared intensity detector for detecting the intensity of an infrared radiation, comPrising a hollow furnace having a resistive film coated on the inside surface thereof, first and second detector elements made of a semiconductive material having a steep negative temperature characteristic in resistivity within a limited temperature range around a critical temperature, said elements being disposed in said furnace and said first element facing infrared radiation to be detected for detecting the intensity thereof and said second element being shielded from the infrared radiation, and a temperature control amplifier for maintaining the temperature in said furnace at said critical temperature connected to said detector element and to said resistive film.
Claim 3
Dependent Claim
30 words
An infrared intensity detector according to claim 1, wherein said semiconductive material is a material selected from the group consisting of vanadium dioxide, divanadium trioxide, titanium monoxide and silver sulfide.
References Cited (Backward Citations)
US3091693A
Cited
US3484611A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-08 | 1975-05-10 | 1975-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-08 | 1979-05-10 | 1979-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-08 | 1983-05-10 | 1983-11-09 | $7700.00 | Window Closed / Lapsed |