US3635767A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of implanting impurity ions into the surface of a semiconductor
Assignee: Hitachi Ltd
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Filing: 1969-09-24
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Granted: 1972-01-18
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Expires: 1989-09-24
Abstract
Abstract Disclosed is a method of implanting impurity ions wherein such ions are implanted into the surface of a semiconductor partially exposed by a hole in two layers, one being made of silicon oxide and the other being made of a metal such as aluminum.
Inventors
- 👤 Takashi Tsuchimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 22:34
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10P30/202; H10P30/204; H10P76/00; H10P76/40; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/106
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
27 words
A method according to claim 1, wherein said first and second insulating layer are selected from the group consisting of silicon oxide, aluminum oxide and silicon nitride.
Claim 2
Dependent Claim
25 words
A method according to claim 1, wherein said first and second metal layer are selected from the group consisting of aluminum, molybdenum, tantalum and chromium.
Claim 3
Dependent Claim
26 words
A method according to claim 3, wherein the thickness of said first and second metal layers are enough to prevent the impurity ions from passing therethrough.
Claim 4
Dependent Claim
24 words
A method according to claim 1, wherein the conductivity type of the first ion implanted region is opposite to that of the semiconductor substrate.
Claim 5
Dependent Claim
34 words
A method according to claim 1, wherein the conductivity type of the second ion implanted region is opposite to that of the first ion implanted region and same to that of the semiconductor substrate.
Claim 6
Dependent Claim
23 words
A method according to claim 1, wherein the thickness of said first insulating layer is different from that of said second insulating layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-01-17 | 1975-07-19 | 1976-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-01-17 | 1979-07-19 | 1980-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-01-17 | 1983-07-19 | 1984-01-18 | $7700.00 | Window Closed / Lapsed |