US3635772A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor components
Assignee: Alcatel Lucent SAS
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Filing: 1969-04-10
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Granted: 1972-01-18
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Expires: 1989-04-10
Abstract
Abstract With a view to carrying out successive treatments on the semiconductor component, the insulating layer of the said component is removed during a preliminary litho-engraving operation on the parts to be opened up later. The procedure can be applied to great advantage to plane structure high-frequency components in which the active base is prolonged by a peripheral part having an increased concentration of impurities, on which electrical connection is easier.
Inventors
- 👤 Jean-Pierre Pestie
- 👤 Jean Belmas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:11
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D99/00; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/106; Y10S148/145; Y10S148/151; Y10S148/173
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US3342650A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-01-17 | 1975-07-19 | 1976-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-01-17 | 1979-07-19 | 1980-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-01-17 | 1983-07-19 | 1984-01-18 | $7700.00 | Window Closed / Lapsed |