Loose contact press pack

Claim 2

A semiconductor device comprised of an entirely diffused junction containing silicon semiconductive element having first and second opposed major surfaces separated by said junction, first and second contact means associated with said first and second surfaces, respectively, housing means encapsulating said semiconductive element ans said contact means comprised of an annular insulative portion and first and second electrically conductive portions sealingly associated with said first and second contact means, respectively, in electrically conductive relation therewith, dielectric passivant means peripherally associated with said junction, and at least one of said first and second contact means being comprised of a thin protective layer of essentially silicon-free aluminum ranging in thickness from 100 A. to 1 mil adhered to one of said surfaces of said semiconductive element and a loose backup plate compressively interposed between said protective layer and one of said conductive portions formed of an electrically conductive metal having a thermal coefficient of expansion of less than 1 33 10 5 in/in per *C.

Claim 3

A thyristor comprising a silicon semiconductive element having first, second, third, and fourth interleaves diffused P and N type layers forming PN junctions therebetween, said fourth layer lying adjacent a first major surface of said element and said first and second layers lying adjacent an opposed second major surface of said element, said first layer being comprised of a main portion and a pilot portion, said second layer including a gate portion separated from said main portion of said first layer by said pilot portion, a spacing portion interposed between said main and pilot portions of said first layer, and a remote portion separated from said pilot portion by said main portion of said first layer, first contact means associated with said main portion of said first layer and said remote portion of said second layer, second contact means associated with said fourth layer, conductive means associated with said pilot portion of said first layer and said spacing portion of said second layer, housing means hermetically encapsulating said semiconductive element and said contact means comprised of an annular insulative portion and first and second electrically conductive portions sealingly associated with said insulative portion and compressively associated with said first and second contact means, respectively, in electrically conductive relation therewith, resilient dielectric junction passivant means peripherally associated with said semiconductive element and cooperating with said housing means to hold said semiconductive element in alignment with said electrically conductive portions at least one of said first and second contact means being comprised of a thin protective layer consisting essentially of aluminum adhered without alloying to at least said first major surface of said semiconductive element and a loose backup plate compressed between said protective layer and one of said conductive portions, said bAck up plate exhibiting a thermal coefficient of expansion of less than 1 X 10 5 in/in per *C., gate lead means extending from said gate portion of said second layer of said semiconductive element to the exterior of said housing means, and insulative means associated with said gate lead means overlying said spacing portion of said second layer to position said loose backup plate in alignment with said thin protective layer.

Claim 4

A thyristor comprising a silicon semiconductive element having first, second, third, and fourth interleaves diffused P and N type layers forming PN junctions therebetween, said fourth layer lying adjacent a first major surface of said element and said first and second layers lying adjacent an opposed second major surface of said element, said first layer being comprised of a main portion and a pilot portion, said second layer including a gate portion separated from said main portion of said first layer by said pilot portion, a spacing portion interposed between said main and pilot portions of said first layer, and a remote portion separated from said pilot portion by said main portion of said first layer, first contact means associated with said main portion of said first layer and said remote portion of said second layer, second contact means associated with said fourth layer, conductive means associated with said pilot portion of said first layer and said spacing portion of said second layer, housing means hermetically encapsulating said semiconductive element and said contact means comprised of an annular insulative portion and first and second electrically conductive portions sealingly associated with said insulative portion and compressively associated with said first and second contact means, respectively, in electrically conductive relation therewith, resilient dielectric junction passivant means peripherally associated with said semiconductive element and cooperating with said housing means to hold said semiconductive element in alignment with said electrically conductive portions at least one of said first and second contact means being comprised of a thin protective layer consisting essentially of aluminum adhered without alloying to at least said first major surface of said semiconductive element and a loose backup plate compressed between said protective layer and one of said conductive portions, said bAck up plate exhibiting a thermal coefficient of expansion of less than 1 X 10 5 in/in per *C., gate lead means extending from said gate portion of said second layer of said semiconductive element to the exterior of said housing means, and insulative means associated with said gate lead means overlying said spacing portion of said second layer to position said loose backup plate in alignment with said thin protective layer.

Claim 5

A semiconductor device comprising an entirely diffused junction containing silicon semiconductive element having first and second opposed major surfaces separated by said junction, said first major surface being formed of N type conductivity silicon, first and second contact means associated with said first and second surfaces, respectively, housing means encapsulating said semiconductive element and said contact means comprised of an annular insulative portion and first and second electrically conductive portions sealingly associated with said insulative portion and adapted to be compressively associated with said first and second contact means, respectively in electrically conductive relation therewith, dielectric passivant means peripherally associated with said junction, and at least said first contact means being comprised of a thin protective layer consisting essentially of aluminum adhered without alloying to at least said first major surface of said semiconductive element and a loose backup plate compressively interposed between said protective layer and one of said conductive portions formed of an electrically conductive metal having a thermal coefficient of expansion of less than 1 X 10 5 in/in per *C.

Claim 6

A semiconductor device comprising an entirely diffused junction containing silicon semiconductive element having first and second opposed major surfaces separated by said junction, said first major surface being formed of N type conductivity silicon, first and second contact means associated with said first and second surfaces, respectively, housing means encapsulating said semiconductive element and said contact means comprised of an annular insulative portion and first and second electrically conductive portions sealingly associated with said insulative portion and adapted to be compressively associated with said first and second contact means, respectively in electrically conductive relation therewith, dielectric passivant means peripherally associated with said junction, and at least said first contact means being comprised of a thin protective layer consisting essentially of aluminum adhered without alloying to at least said first major surface of said semiconductive element and a loose backup plate compressively interposed between said protective layer and one of said conductive portions formed of an electrically conductive metal having a thermal coefficient of expansion of less than 1 X 10 5 in/in per *C.