US3657616A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor switching element
Assignee: NTT Inc
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Filing: 1969-12-15
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Granted: 1972-04-18
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Expires: 1989-12-15
Abstract
Abstract A semiconductor switching element which comprises at least one collector region diffused in a semiconductor substrate from its surface, the collector region containing a high concentration of impurities imparting thereto the same type of conductivity as the substrate and displaying a higher degree of conductivity than the substrate and being formed into a fully narrow area, a base region diffused at a space of approximately 50 microns max. from the collector region, as measured from the same surface of the substrate as that on which there is formed the collector region, such that the edge of the base region facing the collector region is sufficiently longer than that of the collector region, the base region containing a high concentration of impurities imparting thereto the same type of conductivity as the semiconductor substrate and displaying a higher degree of conductivity than the substrate, and at least one emitter region diffused from the same surface of the substrate as that through which the aforesaid two regions are diffused and having an opposite type of conductivity as the substrate.
Inventors
- 👤 Yoshihiko Mizushima
- 👤 Tsuneta Sudo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 20:14
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/094; H03K19/09403; H03K17/00; H03K17/51; H03K17/56; H03K17/687; H03K17/693; H10; H10B; H10B99/00; H10D; H10D99/00
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
201 words
A semiconductor switching element comprising: a semiconductor substrate; at least one collector region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate and being so formed as to have a substantially small effective area; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and dispLaying a higher degree of conductivity than said substrate; and at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; said collector region having an effective area of approximately (20 microns)2 max. and being spaced from said base region at an interval of approximately 50 microns max., and the edge of the base region facing that of the collector region being at least more than 10 times longer than that of said collector region.
Claim 2
Dependent Claim
201 words
A semiconductor switching element comprising: a semiconductor substrate; at least one collector region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate and being so formed as to have a substantially small effective area; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and dispLaying a higher degree of conductivity than said substrate; and at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; said collector region having an effective area of approximately (20 microns)2 max. and being spaced from said base region at an interval of approximately 50 microns max., and the edge of the base region facing that of the collector region being at least more than 10 times longer than that of said collector region.
Claim 3
Dependent Claim
192 words
A semiconductor switching element comprising: a semiconductor substrate; at least one collector region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate and being so formed as to have a substantially small effective area; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate; and at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; said collector region having an effective area of approximately (20 microns)2 max., and being spaced from said base region at an interval of approximately 50 microns max., and said emitter region being disposed between said collector and base regions and substantially near said base region.
Claim 4
Dependent Claim
192 words
A semiconductor switching element comprising: a semiconductor substrate; at least one collector region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate and being so formed as to have a substantially small effective area; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate; and at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; said collector region having an effective area of approximately (20 microns)2 max., and being spaced from said base region at an interval of approximately 50 microns max., and said emitter region being disposed between said collector and base regions and substantially near said base region.
Claim 5
Dependent Claim
218 words
A semiconductor switching element comprising: a semiconductor substrate; at least one collector region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate and being so formed as to have a substantially small effective area; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate; and at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; said collector region having an effective area of approximately (20 microns)2 max. and being spaced from said base region at an interval of approximately 50 microns max., the edge of said base region facing that of said collector region being at least more than 10 times loner than that of said collector region, and the emitter region being positioned between said collector and base regions and substantially near said base region.
Claim 6
Dependent Claim
218 words
A semiconductor switching element comprising: a semiconductor substrate; at least one collector region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate and being so formed as to have a substantially small effective area; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate; and at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; said collector region having an effective area of approximately (20 microns)2 max. and being spaced from said base region at an interval of approximately 50 microns max., the edge of said base region facing that of said collector region being at least more than 10 times loner than that of said collector region, and the emitter region being positioned between said collector and base regions and substantially near said base region.
Claim 7
Dependent Claim
19 words
A semiconductor switching element according to claim 3 wherein said emitter region is split into a plurality of divisions.
Claim 8
Dependent Claim
27 words
A semiconductor switching element according to claim 3 wherein said base region is formed around the outer periphery of an area including said collector and emitter regions.
Claim 9
Dependent Claim
46 words
A semiconductor switching element according to claim 3 wherein said emitter region is split into a plurality of divisions and said base region is formed around the outer periphery of an area including said collector region and said plurality of divisions of said split emitter region.
Claim 10
Dependent Claim
191 words
A semiconductor switching element comprising: a semiconductor substrate; at least one colleCtor region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate and being so formed as to have a substantially small effective area; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate; and at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; the edge of said base region facing that of the collector region being at least ten times longer than the latter, and said collector region being split into a plurality of divisions, each of which has an effective area of approximately (20 microns)2 max.
Claim 11
Dependent Claim
191 words
A semiconductor switching element comprising: a semiconductor substrate; at least one colleCtor region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate and being so formed as to have a substantially small effective area; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate; and at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; the edge of said base region facing that of the collector region being at least ten times longer than the latter, and said collector region being split into a plurality of divisions, each of which has an effective area of approximately (20 microns)2 max.
Claim 12
Dependent Claim
219 words
A semiconductor switching element comprising: a semiconductor substrate; at least one collector region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate and being so formed as to have a substantially small effective area; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate; and at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; the edge of said base region facing that of the collector region being at least 10 times longer than the latter, said collector region being split into a plurality of divisions, each of which has an effective area of approximately (20 microns)2 max. and said base region being formed around the outer periphery of an area including at least one emitter region and said plurality of divisions of said split collector region.
Claim 13
Dependent Claim
219 words
A semiconductor switching element comprising: a semiconductor substrate; at least one collector region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate and being so formed as to have a substantially small effective area; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate; and at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; the edge of said base region facing that of the collector region being at least 10 times longer than the latter, said collector region being split into a plurality of divisions, each of which has an effective area of approximately (20 microns)2 max. and said base region being formed around the outer periphery of an area including at least one emitter region and said plurality of divisions of said split collector region.
Claim 14
Dependent Claim
189 words
A logic circuit comprising: a semiconductor substrate; at least one collector region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate and being so formed as to have a substantially small effective area; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate; and at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; the edge of said base region facing that of said collector region being at least ten times loner than the latter and said collector region being split into a plurality of divisions, each of which has an effective area of (20 microns)2 max.
Claim 15
Dependent Claim
189 words
A logic circuit comprising: a semiconductor substrate; at least one collector region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate and being so formed as to have a substantially small effective area; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate; and at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; the edge of said base region facing that of said collector region being at least ten times loner than the latter and said collector region being split into a plurality of divisions, each of which has an effective area of (20 microns)2 max.
Claim 16
Dependent Claim
203 words
A logic circuit comprising: a semiconductor substrate; at least one collector region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high conceNtration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate; and at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; said collector region having an effective area of approximately (20 microns)2 max. and being spaced from said base region at an interval of approximately 50 microns max., the edge of said base region facing that of the collector region being at least 10 times longer than the latter, and the emitter region being split into a plurality of divisions and disposed between said collector and base regions and substantially near said base region.
Claim 17
Dependent Claim
203 words
A logic circuit comprising: a semiconductor substrate; at least one collector region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high conceNtration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate; and at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; said collector region having an effective area of approximately (20 microns)2 max. and being spaced from said base region at an interval of approximately 50 microns max., the edge of said base region facing that of the collector region being at least 10 times longer than the latter, and the emitter region being split into a plurality of divisions and disposed between said collector and base regions and substantially near said base region.
References Cited (Backward Citations)
US2832898A
Cited
US3436617A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-04-18 | 1975-10-18 | 1976-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-04-18 | 1979-10-18 | 1980-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-04-18 | 1983-10-18 | 1984-04-18 | $7700.00 | Window Closed / Lapsed |