US3661582A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Additives to positive photoresists which increase the sensitivity thereof
Assignee: AT&T Inc
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Filing: 1970-03-23
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Granted: 1972-05-09
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Expires: 1990-03-23
Abstract
Abstract The use of a scanning electron beam to generate a pattern in a positive photoresist is known. Electron beam equipment can be made which is capable of scanning very quickly, but standard positive photoresists require such a large flux of electrons for proper exposure that the scanning equipment must be operated at speeds substantially slower that the capability of the equipment. It has been discovered that by adding certain compounds to photoresists of the quinone diazid type, the sensitivity or speed of the photoresist is substantially increased. As a result, the electron beam can scan at a higher rate. The same compounds also increase the sensitivity of the photoresist to light. Compounds which are operable include aromatic compounds soluble in the resist and having two or more nitrogen atoms, at least one of which is bonded to a hydrogen atom. The ring can contain no other heterocyclic atoms and the nitrogens can not be bonded to other than nitrogen, carbon or hydrogen atoms. This definition includes most, but not all, of the compounds which have been determined to be operable.
Inventors
- 👤 Barret Broyde
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 02:05
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/022; G03F7/0226; Y; Y10; Y10S; Y10S430/00; Y10S430/1053; Y10S430/1055; Y10S430/127
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
28 words
The process as claimed in claim 1, wherein the concentration of said compound in said photoresist is within the range of about 0.5 to about 3.0 weight percent.
Claim 2
Dependent Claim
75 words
In a process for generating a pattern on a substrate coated with a positive photoresist comprising a quinone (1,2 ) diazide sulfonic acid ester by exposure to an electron beam or light, the improvement comprising adding to said photoresist, prior to coating the substrate, at least 0.5 weight percent of a compound selected from the group consisting of benzotriazole 5-methylbenzotriazole 5-chlorobenzotriazole 5,6-dimethylbenzotriazole 1,2-naphthotriazole indazole 5-nitroindazole 5-aminoindazole 6-aminoindazole 6,7-dihydro-5H-pyrrolotetrazole 1,3,4-imidazo-pyridine imidazole quinazoline 6-azauracil 2-azacyclononan-2-one, and indole
Claim 3
Dependent Claim
28 words
The process as claimed in claim 3, wherein the concentration of said compound in said photoresist is within the range of about 0.5 to about 3.0 weight percent.
Claim 4
Dependent Claim
110 words
A process for generating a pattern on a substrate comprising: coating said substrate with a uniform film of a positive photoresist composition comprising a quinone, (1,2) diazide sulfonic acid ester, said composition having added thereto at least 0.5 weight percent of a compound selected from the group consisting of benzotriazole 5-methylbenzotriazole 5-chlorobenzotriazole 5,6-dimethylbenzotriazole 1,2-naphthotriazole indazole 5-nitroindazole 5-aminoindazole 6-aminoindazole 6,7-dihydro-5H-pyrrolotetrazole 1,3,4-imidazo-pyridine imidazole quinazoline 6-azauracil azacyclononan-2-one, and indole; exposing areas of said substrate desired to be unprotected to sufficient electron beam or light radiation to solubilize the film on said areas; dissolving and removing the areas of said film so exposed; and etching, plating or oxidizing the now-exposed portions of said substrate.
Claim 5
Dependent Claim
28 words
The process as claimed in claim 5, wherein the concentration of said compound in said photoresist is within the range of about 0.5 to about 3.0 weight percent.
Claim 6
Dependent Claim
60 words
In a process for generating a pattern on a substrate coated with a positive photoresist comprising a quinone (1,2) diazide sulfonic acid ester, by exposure to an electron beam or light, the improvement comprising adding to said photoresist at least 0.5 weight percent of a compound selected from the group consisting of 2,3-dimethylquinoxaline 3,4-dinitroaniline 5-nitroindoline 1,3-di-(4-piperidyl)propane 5-nitroindole 3,4-dichloroaniline, and 3,4-dimethylaniline.
Claim 7
Dependent Claim
28 words
The process as claimed in claim 7, wherein the concentration of said compound in said photoresist is within the range of about 0.5 to about 3.0 weight percent.
Claim 8
Dependent Claim
74 words
A positive photoresist composition characterized by increased sensitivity to light or electron beams and comprising a quinone (1,2) diazide sulfonic acid ester and at least 0.5 weight percent of a compound selected from the group consisting of aromatic compounds having two to four nitrogen atoms, at least one of which is bonded to a hydrogen atom and containing no other heterocyclic atoms, said nitrogen atoms being bonded only to nitrogen, carbon or hydrogen atoms.
Claim 9
Dependent Claim
28 words
The composition as claimed in claim 9, wherein the concentration of said compound in said photoresist is within the range of about 0.5 to about 3.0 weight percent.
Claim 10
Dependent Claim
54 words
A positive photoresist composition characterizEd by increased sensitivity to light or electron beams and comprising a quinone (1,2) diazide sulfonic acid ester and at least 0.5 weight percent of a compound selected from the group consisting of benzotriazole 5-methylbenzotriazole 5-chlorobenzotriazole 5,6-dimethylbenzotriazole 1,2-naphthotriazole indazole 5-nitroindazole 5-aminoindazole 6-aminoindazole 6,7-dihydro-5H-pyrrolotetrazole 1,3,4-imidazopyridine imidazole quinozaline 6-azauracil azacyclononan-2-one, and indole.
Claim 11
Dependent Claim
28 words
The composition as claimed in claim 11, wherein the concentration of said compound in said photoresist is within the range of about 0.5 to about 3.0 weight percent.
Claim 12
Dependent Claim
47 words
A positive photoresist composition characterized by increased resistance to overexposure by light or electron beams and comprising a quinone (1,2) diazide sulfonic acid ester and at least 0.5 weight percent of a compound selected from the group consisting of 2,3-dimethylquinoxaline 3,4-dinitroaniline 5-nitroindoline 1,3-di-(4-piperidyl)propane 5-nitroindole 3,4-dichloroaniline, and 3,4-dimethylaniline.
Claim 13
Dependent Claim
28 words
The composition as claimed in claim 13, wherein the concentration of said compound in said photoresist is within the range of about 0.5 to about 3.0 weight percent.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-09 | 1975-11-08 | 1976-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-09 | 1979-11-08 | 1980-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-09 | 1983-11-08 | 1984-05-09 | $7700.00 | Window Closed / Lapsed |