US3663320A
Expired / Lapsed
US
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Vapor growth process for gallium arsenide
Assignee: NEC Corp
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Filing: 1969-07-30
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Granted: 1972-05-16
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Expires: 1989-07-30
Abstract
Abstract A process is provided for vapor growing a gallium arsenide single crystal layer on a substrate seed-crystal of gallium arsenide having a uniform electron concentration profile in the layer wherein at least two kinds of impurities of the same conductivity type are employed, one which causes autodoping to occur in the vapor-grown crystal, the other which tends to inhibit autodoping.
Inventors
- 👤 Mitsuhiro Maruyama
- 👤 Osamu Mizuno
- 👤 Sadao Kikuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 04:36
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3438; H10P14/3441; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/3402; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/007; Y10S148/151; Y10S438/00; Y10S438/914; Y10S438/916
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
17 words
The method of claim 1, wherein one impurity is tellurium, and wherein the other impurity is silicon.
Claim 2
Dependent Claim
20 words
The method of claim 1, wherein one impurity is tellurium, and wherein silicon and tin together comprise the other impurity.
Claim 3
Dependent Claim
129 words
In a process for vapor growing a gallium arsenide single crystal layer on a substrate seed-crystal of gallium arsenide having a uniform electron concentration profile in the layer, the improvement which comprises the steps of doping said substrate seed-crystal with at least two kinds of impurities having the same conductivity type, one being able to cause autodoping to occur in the vapor-grown crystal which is selected from the group consisting of tellurium, selenium and sulfur each in an amount of about 5 X 1017cm 3, the other tending to inhibit autodoping which is selected from the group consisting of silicon, tin and germanium, and vapor-growing a gallium arsenide single crystal having impurity concentration of less than 5 X 1016cm 3 on said substrate seed-crystal of gallium arsenide single crystAl.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-16 | 1975-11-15 | 1976-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-16 | 1979-11-15 | 1980-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-16 | 1983-11-15 | 1984-05-16 | $7700.00 | Window Closed / Lapsed |