US3665190A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Mos-fet infrared detector
Assignee: Hitachi Ltd
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Filing: 1970-09-11
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Granted: 1972-05-23
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Expires: 1990-09-11
Abstract
Abstract An electromagnetic wave detecting element which employs an MOS type field effect device as an element for detection to enable the response time to be as short as 10 7 sec or less as compared to the conventional response of 10 3 sec. Electromagnetic waves for detection are directed to the surface of the MOS device opposite to the surface on which electrodes are provided.
Inventors
- 👤 Nobuo Kotera
- 👤 Yoshifumi Katayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 05:13
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/282; G; G01; G01R; G01R29/00; G01R29/08; G01R29/0864; G01R29/0878; G02; G02F; G02F2/00
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
73 words
An electromagnetic wave detecting device comprising an MOS field effect transistor, means for applying a voltage to the gate electrode of said MOS field effect transistor, and means for applying a d.c. voltage between the source and drain electrodes of said MOS field effect transistor, said transistor being adapted to receive electromagnetic waves to be detected from the surface opposite to the surface on which said source, drain and gate electrodes are disposed.
Claim 2
Dependent Claim
73 words
An electromagnetic wave detecting device comprising an MOS field effect transistor, means for applying a voltage to the gate electrode of said MOS field effect transistor, and means for applying a d.c. voltage between the source and drain electrodes of said MOS field effect transistor, said transistor being adapted to receive electromagnetic waves to be detected from the surface opposite to the surface on which said source, drain and gate electrodes are disposed.
Claim 3
Dependent Claim
42 words
An electromagnetic wave detecting device according to claim 1, comprising a chopper disposed in front of said transistor for interrupting incident electromagnetic waves and a transformer and lock-in detector connected to said drain electrode for amplifying the output signal of said transistor.
Claim 4
Independent Claim
149 words
A method of detecting electromagnetic waves, particularly those in the long wavelength region such as millimeter waves and far infared rays, comprising the steps of: disposing an MOS field effect transistor having a semiconductor substrate of one conductivity type, a gate electrode disposed through an insulating layer on the central portion of one major surface of said substrate, a source and drain electrode each being disposed on one major surface at opposite sides of said central portion, and means for applying a voltage to said gate electrode with means for applying a D.C. voltage between said source and drain electrodes in the path of an electromagnetic wave, so that said electromagnetic wave impinges on said semiconductor substrate and measuring the terminal voltage between the source and drain electrodes so as to provide an indication of the intensity of the incident electromagnetic waves impingent upon said MOS field effect transistor.
Claim 5
Independent Claim
149 words
A method of detecting electromagnetic waves, particularly those in the long wavelength region such as millimeter waves and far infared rays, comprising the steps of: disposing an MOS field effect transistor having a semiconductor substrate of one conductivity type, a gate electrode disposed through an insulating layer on the central portion of one major surface of said substrate, a source and drain electrode each being disposed on one major surface at opposite sides of said central portion, and means for applying a voltage to said gate electrode with means for applying a D.C. voltage between said source and drain electrodes in the path of an electromagnetic wave, so that said electromagnetic wave impinges on said semiconductor substrate and measuring the terminal voltage between the source and drain electrodes so as to provide an indication of the intensity of the incident electromagnetic waves impingent upon said MOS field effect transistor.
Claim 6
Dependent Claim
134 words
An electromagnet wave detecting device comprising first means for receiving electromagnetic waves to be detected; and second means, responsive to the impingement of electromagnetic waves on said first means, for generating an electrical signal corresponding to the intensity of said received electromagnetic waves; wherein said first means comprises a first surface of an MOS field effect transistor, and said second means comprises terminals attached to the source and drain electrodes of said MOS field effect transistor which, together with the gate electrode of said MOS field effect transistor, are disposed on the principle surface of said MOS field effect transistor opposite said first surface, said MOS field effect transistor further including a voltage source connected to said gate electrode and a means for applying a D.C. voltage between said source and drain electrodes thereof.
Claim 7
Dependent Claim
134 words
An electromagnet wave detecting device comprising first means for receiving electromagnetic waves to be detected; and second means, responsive to the impingement of electromagnetic waves on said first means, for generating an electrical signal corresponding to the intensity of said received electromagnetic waves; wherein said first means comprises a first surface of an MOS field effect transistor, and said second means comprises terminals attached to the source and drain electrodes of said MOS field effect transistor which, together with the gate electrode of said MOS field effect transistor, are disposed on the principle surface of said MOS field effect transistor opposite said first surface, said MOS field effect transistor further including a voltage source connected to said gate electrode and a means for applying a D.C. voltage between said source and drain electrodes thereof.
Claim 8
Dependent Claim
49 words
A device according to claim 4, further comprising third means for interrupting the electromagnetic waves incident upon said first means including a rotatable chopper and further including a transformer and a lock-in detector connected to the terminal which is connected to said drain electrode for amplifying said electrical signal.
Claim 9
Dependent Claim
17 words
A device according to claim 4, wherein said voltage source connected to said gate electrode is variable.
Claim 10
Dependent Claim
47 words
A device according to claim 4, wherein said substrate further includes an oxide layer of In2O3.SiO2 on which said gate electrode is formed, said substrate being a p-type InSb substrate, on said principle surface of which beneath said source and drain layers an acceptor impurity is doped.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-23 | 1975-11-22 | 1976-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-23 | 1979-11-22 | 1980-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-23 | 1983-11-22 | 1984-05-23 | $7700.00 | Window Closed / Lapsed |