US3676756A
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US
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Insulated gate field effect device having glass gate insulator
Assignee: INNOTECH CORP
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Filing: 1969-09-18
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Granted: 1972-07-11
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Expires: 1989-09-18
Abstract
Abstract An insulated gate field effect transistor having a glass gate insulator is fabricated by diffusing into a semiconductor substrate the impurities required to produce the channel, source and drain, exposing the substrate by etching away any remaining masking layer, forming a gate insulator of thin film ion impermeable glass on the exposed substrate and then metalizing and packaging the resulting device. Advantageously, the thin glass film is also used as a passivating layer. IGFET''S fabricated in this manner are significantly more resistant to contamination than are prior art devices using oxide insulated gates and passivating layers. As a consequence they are more economical to fabricate and more reliable in operation.
Inventors
- 👤 Seymour Merrin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:27
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; H10D; H10D99/00; H10P14/6929; H10P14/6936; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
28 words
An insulated gate field effect transistor having a gate insulator comprising a thin film of glass made from 70 per cent or more of ionically impermeable crystalline phases.
Claim 2
Dependent Claim
28 words
An insulated gate field effect transistor having a gate insulator comprising a thin film of glass made from 70 per cent or more of ionically impermeable crystalline phases.
Claim 3
Dependent Claim
20 words
A device according to claim 1 wherein said crystalline phases have, as their main structural element, a linear chain-like element.
Claim 4
Dependent Claim
18 words
A device according to claim 1 wherein said thin film of glass is less than 3000 angstroms thick.
Claim 5
Dependent Claim
32 words
A device according to claim 3 wherein said thin film of glass is made from one or more of the phases selected from the group consisting of PbSiO3, Pb6Al2Si6O21, ZnB2O4 and ZnSiO4.
Claim 6
Dependent Claim
44 words
A device according to claim 3 wherein said thin film of glass is a glass having a temperature coefficient of expansion compatible with the semiconductor substrate of the transistor and a softening temperature below the damage temperature of diffused semiconductor elements of the transistor.
Claim 7
Dependent Claim
12 words
A device according to claim 5 wherein said semiconductor substrate is germanium.
Claim 8
Dependent Claim
14 words
A device according to cLaim 5 wherein said semiconductor substrate is an intermettalic semiconductor.
Claim 9
Dependent Claim
21 words
A device according to claim 5 wherein said glass is selected from the group consisting of lead-alumino-silicate, lead-boro-alumino-silicate, zinc-boro-silicate and zinc-boro-alumino-silicate.
Claim 10
Dependent Claim
65 words
An insulated gate field effect transistor comprising a thin film of glass made from the following components in the following mole percentage ranges: SiO2 3-12 mole percent ZnO 45-65 mole percent PbO 0-6 mole percent B2O3 25-40 mole percent Al2O3 0-3 mole percent wherein CaO, BaO, SrO or a mixture thereof can be substituted for ZnO in an amount up to 10 mole per cent.
Claim 11
Dependent Claim
65 words
An insulated gate field effect transistor comprising a thin film of glass made from the following components in the following mole percentage ranges: SiO2 3-12 mole percent ZnO 45-65 mole percent PbO 0-6 mole percent B2O3 25-40 mole percent Al2O3 0-3 mole percent wherein CaO, BaO, SrO or a mixture thereof can be substituted for ZnO in an amount up to 10 mole per cent.
Claim 12
Dependent Claim
69 words
An insulated gate field effect transistor having a gate insulator comprising a thin film of glass made from the following components in the following mole percentage ranges: SiO2 55-65 mole percent PbO 30-40 mole percent Al2O3 0-7 mole percent wherein B2O3 can be substituted for SiO2 in amounts up to 20 mole per cent, and ZnO can be substituted for PbO in amounts up to 20 mole per cent.
Claim 13
Dependent Claim
69 words
An insulated gate field effect transistor having a gate insulator comprising a thin film of glass made from the following components in the following mole percentage ranges: SiO2 55-65 mole percent PbO 30-40 mole percent Al2O3 0-7 mole percent wherein B2O3 can be substituted for SiO2 in amounts up to 20 mole per cent, and ZnO can be substituted for PbO in amounts up to 20 mole per cent.
Claim 14
Dependent Claim
69 words
An insulated gate field effect transistor having a gate insulator comprising a thin film of glass made from the following components in the following mole percentage ranges: SiO2 35-55 mole percent PbO 35-60 mole percent Al2O3 0-20 mole percent wherein B2O3 can be substituted for SiO2 in amounts up to 20 mole per cent, and ZnO can be substituted for PbO in amounts up to 20 mole per cent.
Claim 15
Dependent Claim
69 words
An insulated gate field effect transistor having a gate insulator comprising a thin film of glass made from the following components in the following mole percentage ranges: SiO2 35-55 mole percent PbO 35-60 mole percent Al2O3 0-20 mole percent wherein B2O3 can be substituted for SiO2 in amounts up to 20 mole per cent, and ZnO can be substituted for PbO in amounts up to 20 mole per cent.
Claim 16
Dependent Claim
76 words
An insulated gate field effect transistor having a gate insulator comprising a thin film of glass made from the following components in the following mole percentage ranges: SiO2 5-15 mole percent ZnO 50-65 mole percent B2O3 25-35 mole percent wherein CaO, BaO, SrO or a mixture thereof can be substituted for ZnO in an amount up to 10 mole per cent and PbO can be substituted for ZnO in amounts up to 20 mole per cent.
Claim 17
Dependent Claim
76 words
An insulated gate field effect transistor having a gate insulator comprising a thin film of glass made from the following components in the following mole percentage ranges: SiO2 5-15 mole percent ZnO 50-65 mole percent B2O3 25-35 mole percent wherein CaO, BaO, SrO or a mixture thereof can be substituted for ZnO in an amount up to 10 mole per cent and PbO can be substituted for ZnO in amounts up to 20 mole per cent.
Claim 18
Dependent Claim
36 words
A passivated semiconductor device comprising a semiconductor device having disposed thereon a thin film of glass having a thickness of less than 5000 angstroms made from 50 per cent or more of ionically impermeable crystalline phases.
Claim 19
Dependent Claim
36 words
A passivated semiconductor device comprising a semiconductor device having disposed thereon a thin film of glass having a thickness of less than 5000 angstroms made from 50 per cent or more of ionically impermeable crystalline phases.
Claim 20
Dependent Claim
23 words
A passivated semiconductor device according to claim 13 wherein said glass is selected from the group consisting of lead-alumino-silicate, lead-boro-alumino-silicate, zinc-boro-silicate and zinc-boro-alumino-silicate.
Claim 21
Dependent Claim
40 words
A passivated semiconductor device comprising a semiconductor substrate having disposed thereupon a thin film of glass comprising the following components in substantially the following mole percentage ranges: SiO2 3-13mole percent ZnO 45-65percent (0-6mole percent B2O3 25-40mole percent Al2O3 0-3mole percent.
Claim 22
Dependent Claim
40 words
A passivated semiconductor device comprising a semiconductor substrate having disposed thereupon a thin film of glass comprising the following components in substantially the following mole percentage ranges: SiO2 3-13mole percent ZnO 45-65percent (0-6mole percent B2O3 25-40mole percent Al2O3 0-3mole percent.
Claim 23
Dependent Claim
36 words
A passivated semiconductor device comprising a semiconductor substrate having disposed thereupon a thin film of glass comprising the following components in substantially the following mole percentage ranges: SiO2 55-65mole percent PbO 30-40mole percent Al2O3 0-7mole percent.
Claim 24
Dependent Claim
36 words
A passivated semiconductor device comprising a semiconductor substrate having disposed thereupon a thin film of glass comprising the following components in substantially the following mole percentage ranges: SiO2 55-65mole percent PbO 30-40mole percent Al2O3 0-7mole percent.
Claim 25
Dependent Claim
36 words
A passivated semiconductor device comprising a semiconductor substrate having disposed thereupon a thin film of glass comprising the following components in substantially the following mole percentage ranges: SiO2 35-55mole percent PbO 35-60mole percent Al2O3 0-20mole percent.
Claim 26
Dependent Claim
36 words
A passivated semiconductor device comprising a semiconductor substrate having disposed thereupon a thin film of glass comprising the following components in substantially the following mole percentage ranges: SiO2 35-55mole percent PbO 35-60mole percent Al2O3 0-20mole percent.
Claim 27
Dependent Claim
36 words
A passivated semiconductor device comprising a semiconductor substrate having disposed thereupon a thin film of glass comprising the following components in substantially the following mole percentage ranges: SiO2 5-15mole percent ZnO 50-65mole percent B2O3 25-35mole percent.
Claim 28
Dependent Claim
36 words
A passivated semiconductor device comprising a semiconductor substrate having disposed thereupon a thin film of glass comprising the following components in substantially the following mole percentage ranges: SiO2 5-15mole percent ZnO 50-65mole percent B2O3 25-35mole percent.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-11 | 1976-01-10 | 1976-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-11 | 1980-01-10 | 1980-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-11 | 1984-01-10 | 1984-07-11 | $7700.00 | Window Closed / Lapsed |