Vapor transport method for growing crystals

Abstract

Abstract PHIDE IS GROWN. THERMODYNAMIC ANALYSIS YIELDS PERMISSIBLE RANGES FOR THE PARTIAL PRESSURES OF THE P2, THE GA2O, AND H2O (FROM WHICH ARE DERIVED THE INLET PRESSURES OF THE PH3 AND THE H20+H2) AND FOR THE TEMPERATURE OF THE LIQUID GA AND OF THE SUBSTRATE. UNIFORM, LARGE AREA SINGLE CRYSTALS (E.G., GAP) GROWN IN THIS MANNER CONTAIN HIGH AMOUNTS OF ELECTRICALLY ACTIVE DOPANTS (E.G., OXYGEN) AND ARE USABLE AS EFFICIENT PHOTO- AND ELECTRO-LUMINESCENT DEVICES. SINGLE CRYSTALS OF EITHER III-V OR VI COMPOUNDS ARE DEPOSITED ON A HEATED SUBSTRATE USING A HEATED LIQUIFIED MASS OF THE METALLIC CONSTITUENT (GROUP III OR II), A HYDROGEN COMPOUND OF THE GROUP V OR VI ELEMENT AND WET HYDROGEN AS SOURCE MATERIALS WITHIN AN OPEN REACTION TUBE AT AN ELEVATED TEMPERATURE. IN A PREFERRED EMBODIMENT SINGLE CRYSTAL GAP IS GROWN USING HEATED LIQUID GALLIUM (GA), PHOSPHINE (PH3) AND WET HYDROGEN (H2O AND H2) AS SOURCE MATERIALS. THE WET HYDROGEN IS PASSED OVER THE LIQUID GALLIUM TO GENERATE A GALLIUM SUB-OXIDE (GGA2O) STREAM WHILE THE TEMPERATURE OF THE TUBE DECOMPOSES THE PHOSPHINE TO P2 AND H2 IN A STREAM. THE P2AND GA20-CONTAINING STREAMS ARE MIXED BUT THEY REACH THE HEATED SUBSTRATE WHERE THE SINGLE CRYSTAL GALLIUM PHOS-

Inventors

• 👤 M Lim

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