US3723177A
Expired / Lapsed
US
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Method of producing a group iii-v semiconductor compound
Assignee: Toshiba Corp
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Filing: 1970-03-17
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Granted: 1973-03-27
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Expires: 1990-03-17
Abstract
Abstract A COMPOUND SEMICONDUCTOR EPITAXIALLY GROWN ON A TRANSPARENT AND INSULATING SUBSTRATE OF AN ALUMINIUM OXIDE, THE COMPOUND BEING FORMED OF ELEMENTS OF GROUPS III AND V OF THE PERIODIC TABLE. THE GROUP III-V COMPOUND SEMICONDUCTOR IS PRODUCED BY EPITAXIALLY GROWING A SINGLE CRYSTAL OF A GROUP III-V COMPOUND FROM A GALLIUM SOLUTION INCORPORATING ALUMINUM, WHICH SERVES TO BETTER THE WETTING OF THE SUBSTRATE.
Inventors
- 👤 M Toyama
- 👤 T Sekiwa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:55
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B19/00; C30B19/02; C30B19/04; H; H10; H10H; H10H20/00; H10H20/80; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/049; Y10S148/056; Y10S148/065; Y10S148/107; Y10S148/142; Y10S148/15; Y10S438/00; Y10S438/967
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-03-26 | 1976-09-25 | 1977-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-03-26 | 1980-09-25 | 1981-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-03-26 | 1984-09-25 | 1985-03-27 | $7700.00 | Window Closed / Lapsed |