US3744038A
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Superconducting learning matrix
Assignee: Robotron VEB
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Filing: 1971-07-09
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Granted: 1973-07-03
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Expires: 1991-07-09
Abstract
Abstract A superconducting learning matrix in which the coupling cells at the matrix intersections include a write cryotron controlled by the row lines for activating the storage cells, and a coupling cryotron for coupling the column lines either to the row lines or word recognition lines for reading out of the cell. The storage cells are activated according to a geometric series. The coupling cryotrons may also be controlled by a blocking line, and additional switching cryotrons may be provided for insuring constant current in taught cells. In a further embodiment, a complementary matrix may also be provided.
Inventors
- 👤 H Kneupel
- 👤 B Steffin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 23:05
CPC Classifications
G; G06; G06N; G06N3/00; G06N3/02; G06N3/06; G06N3/063; G06V; G06V30/00; G06V30/10; G06V30/19; G06V30/192; G06V30/194; G11; G11C; G11C11/00; G11C11/21; G11C11/44; G11C15/00; G11C15/06; Y; Y10; Y10S; Y10S505/00; Y10S505/825; Y10S505/831; Y10S505/838; Y10S505/84
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
194 words
A method of teaching a storage cell of a superconducting learning matrix of the type having a cryotron in series in said storage cell, comprising applying a control pulse sequence to said cryotron for changing the state of said cryotron from superconductive to normal resistance, and applying a second current pulse sequence to said cell which divides between a first path in said cell including said cryotron and a second path in said cell which does not Include said cryotron, the duration of the pulses of said control pulse sequence being no greater than the displacement time constant Lg/R, where Lg is the inductance of said cell and R is the gate resistance of said cryotron, and said second current pulses have longer duration than said control pulses, at least some of said control pulses occurring simultaneously with said second pulses, whereby current stored in said cell following the pulses of said pulse sequences varies in a stepwise manner as a geometric series function which varies in a sense dependent upon the polarity of the pulses of the second pulse sequence and independent of the polarity of the pulses of the first pulse sequence.
Claim 2
Independent Claim
194 words
A method of teaching a storage cell of a superconducting learning matrix of the type having a cryotron in series in said storage cell, comprising applying a control pulse sequence to said cryotron for changing the state of said cryotron from superconductive to normal resistance, and applying a second current pulse sequence to said cell which divides between a first path in said cell including said cryotron and a second path in said cell which does not Include said cryotron, the duration of the pulses of said control pulse sequence being no greater than the displacement time constant Lg/R, where Lg is the inductance of said cell and R is the gate resistance of said cryotron, and said second current pulses have longer duration than said control pulses, at least some of said control pulses occurring simultaneously with said second pulses, whereby current stored in said cell following the pulses of said pulse sequences varies in a stepwise manner as a geometric series function which varies in a sense dependent upon the polarity of the pulses of the second pulse sequence and independent of the polarity of the pulses of the first pulse sequence.
Claim 3
Dependent Claim
164 words
A superconducting learning matrix comprising a superconducting matrix having a plurality of row and column lines with separate coupling cells at the intersections thereof, each coupling cell comprising a storage cell, a coupling branch including a coupling cryotron coupled to said storage cell, whereby the conductive state of said cryotron is a function of current in said storage cell, means applying pulse currents to said row and column lines, and means responsive to currents in said row and column lines for varying the amplitude of current in said storage cell in a stepwise manner as a geometric series function which varies in a sense dependent upon the polarity of pulses applied to said column lines and independent of the polarity of pulses applied to said row lines, said coupling cryotrons being responsive to change their conductive states upon the occurrence in the respective cells of a current greater than the current which can be stored therein solely in response to a single column pulse.
Claim 4
Dependent Claim
164 words
A superconducting learning matrix comprising a superconducting matrix having a plurality of row and column lines with separate coupling cells at the intersections thereof, each coupling cell comprising a storage cell, a coupling branch including a coupling cryotron coupled to said storage cell, whereby the conductive state of said cryotron is a function of current in said storage cell, means applying pulse currents to said row and column lines, and means responsive to currents in said row and column lines for varying the amplitude of current in said storage cell in a stepwise manner as a geometric series function which varies in a sense dependent upon the polarity of pulses applied to said column lines and independent of the polarity of pulses applied to said row lines, said coupling cryotrons being responsive to change their conductive states upon the occurrence in the respective cells of a current greater than the current which can be stored therein solely in response to a single column pulse.
Claim 5
Dependent Claim
51 words
The superconducting learning matrix of claim 2 wherein said means responsive to currents in said row and column lines comprises a write cryotron in series in the corresponding column line and forming part of said storage cell, said write cryotron being connected for control by current in the corresponding row line.
Claim 6
Dependent Claim
21 words
The superconducting learning matrix of claim 3 comprising means for connecting said coupling branch between the corresponding row and column lines.
Claim 7
Dependent Claim
78 words
The superconducting learning matrix of claim 3 wherein each row of said matrix further comprises a separate word recognizing line, the coupling cryotrons of each row of said matrix being connected in series with the word recognizing line of the corresponding row, means applying interrogation currents to said column lines, whereby the resistance of the coupling cryotrons in each word recognizing line is a function of the interrogation currents and the currents stored in the corresponding storage cells.
Claim 8
Dependent Claim
21 words
The superconducting learning matrix of claim 3 wherein said matrix further includes a blocking line connected to control said coupling cryotrons.
Claim 9
Dependent Claim
98 words
The superconducting learning matrix of claim 3 wherein said means responsive to currents further comprises means for applying a control pulse sequence to said row lines, and means applying a second current pulse sequence to said column lines, the duration of the pulses of said control pulse series being no greater than the displacement time constant Lg/R, where Lg is the inductance of said storage cell and R is the gate resistance of said write cryotron, said second current pulses having longer durations than said control pulses and occurring simultaneously with at least some of said control pulses.
Claim 10
Dependent Claim
43 words
The superconducting learning matrix of claim 3 further comprising a complementary coupling cryotron coupled to each storage cell and a complementary write cryotron connected to each storage cell, said complementary coupling cryotrons and complementary write cryotrons being interconnected to form a complementary matrix.
Claim 11
Dependent Claim
43 words
The superconducting learning matrix of claim 3 wherein said coupling cryotrons are dimensioned to switch automatically to a different conducting state when a predetermined threshold current in the correspoNding storage cell is exceeded, for excluding the respective column of said matrix from interrogation.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-07-02 | 1977-01-01 | 1977-07-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-07-02 | 1981-01-01 | 1981-07-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-07-02 | 1985-01-01 | 1985-07-03 | $7700.00 | Window Closed / Lapsed |