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US3748593A
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Method and means of construction of a semiconductor material for use as a laser
Assignee: —
•
Filing: 1970-11-17
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Granted: 1973-07-24
•
Expires: 1990-11-17
Abstract
Abstract A semiconductor material for use as a lasing medium made of a solid solution of at least two Group IV- VI compounds which form a semiconductor alloy having a direct band gap which is increased or decreased, depending on the proportion of said materials in the solid solution, there being a certain proportion at which the band gap is zero, at a given temperature and pressure, whereas greater or lesser proportions than said certain proportion results in an increase in the band gap of the semiconductor from said zero band gap.
Inventors
No inventors recorded.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:02
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
22 words
In a laser system as in claim 1, wherein the predetermined band gap is greater than zero and less than 0.1 eV.
Claim 2
Dependent Claim
18 words
In a laser system as in claim 1, wherein the compounds are each direct gap type semiconductor materials.
Claim 3
Dependent Claim
61 words
In a laser system as in claim 3, wherein one of the compounds has a first energy state at the conduction band edge thereof and a second energy state at the valence band edge thereof, and the other compound has said first energy state at the valence band edge thereof and said second energy state at the conduction band edge thereof.
Claim 4
Dependent Claim
26 words
In a laser system as in claim 4, wherein said first energy state is the L6 state and said second energy state is the L6 state.
Claim 5
Dependent Claim
22 words
In a laser system as in claim 1, wherein one of the Group IV elements is lead and the other is tin.
Claim 6
Dependent Claim
20 words
In a laser system as in claim 6, wherein the lead compound is PbTe and the tin compound is SnTe.
Claim 7
Dependent Claim
22 words
In a laser system as in claim 7. wherein the material has the formula PbxSn1 xTe and x is greater than 0.30.
Claim 8
Dependent Claim
20 words
In a laser system as in claim 6, wherein the lead compound is PbSe and the tin compound is SnSe.
Claim 9
Dependent Claim
22 words
In a laser system as in claim 9, wherein the material has the formula PbxSn1 xSe and x is greater than 0.65.
Claim 10
Dependent Claim
32 words
In a laser system as in claim 6, wherein the number of mols of Pb in said solid solution is greater than the number of mols of Sn in the solid solution.
References Cited (Backward Citations)
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Cited
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US3302051A
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Cited
US3439169A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-07-23 | 1977-01-22 | 1977-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-07-23 | 1981-01-22 | 1981-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-07-23 | 1985-01-22 | 1985-07-24 | $7700.00 | Window Closed / Lapsed |