Abstract A method for the liquid phase epitaxial growth of semiconductor crystals is performed using apparatus that comprises a dis-shaped vessel provided with a plurality of receptacles of a source solution for said epitaxial growth; a similarly disc-shaped boat disposed close to the underside of the vessel and provided with a recess for receiving a substrate on which there are to be formed semiconductor crystals by liquid phase epitaxial growth, said recess being cut out in that side of the boat which faces the vessel so as to be brought exactly under any of the receptacles of the vessel when it is rotated; a quartz pipe for supporting the boat; means for rotating either of the vessel and boat relative to the other; an envelope surrounding the vessel and boat in airtight relationship; means for conducting a desired type of gas through the envelope; and a cylindrical furnace enclosing the envelope to heat its interior with the relative position of said cylindrical furnace and envelope rendered adjustable.
A method for the liquid phase epitaxial growth of semiconductor crystals which comprises providing a disc-shaped vessel having a plurality of receptacles containing a source solution for said epitaxial growth equidistantly arranged from the center of the vessel; providing a similarly disc-shaped boat disposed close to the underside of said vessel and provided with a recess containing a substrate on which there is to be formed semiconductor crystals by liquid phase epitaxial growth, said recess being cut out in that side of the boat which faces the vessel so as to be brought exactly under any of the receptacles of the vessel when it is rotated; positioning said substrate under one of said receptacles with the top surface of the substrate in contact with source solution contained in the receptacle, epitaxially growing a layer of semiconductor crystal upon said surface from source solution in contact therewith; rotating said vessel to position said substrate under another of said receptacles; and epitaxially growing a second layer of semiconductor crystal upon said substrate from source solution contained in said another receptacle.
Claim 2
Dependent Claim
24 words
The method according to claim 2 wherein the boat is provided with a narrow groove in that side which faces the source solution vessel.
Claim 3
Dependent Claim
39 words
The method according to claim 2 wherein the source solution vessel is provided with a plurality of narrow grooves in that side which faces the boat, each of said grooves being disposed between the adjacent ones of the receptacles.
Claim 4
Dependent Claim
24 words
The method according to claim 4 wherein the boat is provided with a narrow groove in that side which faces the source solution vessel.
Claim 5
Dependent Claim
48 words
The method according to claim 2 wherein the source solution vessel has a graphite weight fitted into each receptacle so as to connect the source solution contained therein, thereby preventing the substrate from making a poor contact with said solution due to the possible occurrence of its meniscus.
Claim 6
Dependent Claim
31 words
The method according to claim 2 wherein the boat is provided on the underside with a cavity into which there is inserted the uppermost end of a pipe containing a thermocouple.