Method of preparing dislocation-free crystals
Abstract
Abstract DISCLOSED IS A METHOD FOR GROWING CRYSTALS UPON NONINDENTICAL SUBSTRATE OR SEED CRYSTAL IN WHICH THE GROWN CRYSTALS HAVE A HIGH DEGREE OF CRYSTAL PERFECTION. MORE PARTICULARLY, THE INVENTION IN A METHOD OF SELECTING SUITABLE SEED OR SUBSTRATE CRYSTALS WHICH PERMIT THE GROWTH OF DISLOCATION-FREE CRYSTALS, A METHOD OF SELECTING THEOPTIMUM PLANE ON WHICH TO GROW THE CRYSTALS AS WELL AS APPROXIMATING A LARGE NUMBER OF SUITABLE PLANES, AND THEN GROWING THE CRYSTAL TO A MINIMUM THICKNESS AT WHICH ALL DISLOCATIONS ARE REMOVED FROM THE GROWING CRYSTAL. THIS INVENTION IS PARTICULARLY APPLICABLE TO THE GROWTH OF DISLOCATION-FREE THIN FILM CRYSTALS SINCE THE MINIMUM THICKNESS CAN BE READILY CALCULATED AND IS OFTEN QUITE SMALL. D R A W I N G
Inventors
- 👤 S Mader
- 👤 J Matthews
Bibliographic Details
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