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US3800192A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor circuit element with pressure contact means

Assignee: Individual
•
Filing: 1973-07-30
•
Granted: 1974-03-26
•
Expires: 1993-07-30
📄 Original PDF 🌐 Google Patents

Abstract

Abstract The present semiconductor circuit elements employ pressure contact means for establishing the necessary contact between the semiconductor body proper and ductile electrodes. These contact means comprise contact discs and the ductile electrodes have outwardly directed rims into which the discs fit to symmetrically locate these discs relative to the center axis of the device. Means are also provided for holding the ductile electrodes in place.

Inventors

  • 👤 D Eisele
  • 👤 K Weimann
  • 👤 O Schaerli

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 00:39
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/10; H10W76/12; H10W76/13; H10W76/138; H10W72/00

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 223 words
A semiconductor circuit element with pressure contact means, comprising a wafer semiconductor body having at least one pnjunction and two outwardly facing surfaces, said pressure contact means comprising two pressure contact elements for clamping said semiconductor body therebetween, said contact elements being arranged symmetrically on opposite facing surfaces of said body, and a single separate ductile electrode interposed between each outwardly facing surface of the semiconductor body and the respective pressure contact element, said pressure contact elements having identical inwardly facing surfaces facing the respective outwardly facing surface of the semiconductor body and disposed symmetrically toward the respective semiconductor body surface, said identical inwardly facing surfaces providing pressure areas arranged symmetrically relative to a center line of the circuit element, said ductile electrodes having a dished shape with an up-turned rim surrounding an inner, outwardly facing bottom, each bottom having a diameter corresponding to that of the respective one of said pressure contact elements so that the radial position of the respective pressure contact element inside said rim is automatically fixed and centered relative to the corresponding ductile electrode, and resilient adhesive holding means between the edges of said ductile electrodes and the edges of said body for symmetrically holding said ductile electrodes on said outwardly facing surfaces of said semiconductor body, whereby the position of the respective contact elements is automatically centered.
Claim 2
Dependent Claim 223 words
A semiconductor circuit element with pressure contact means, comprising a wafer semiconductor body having at least one pnjunction and two outwardly facing surfaces, said pressure contact means comprising two pressure contact elements for clamping said semiconductor body therebetween, said contact elements being arranged symmetrically on opposite facing surfaces of said body, and a single separate ductile electrode interposed between each outwardly facing surface of the semiconductor body and the respective pressure contact element, said pressure contact elements having identical inwardly facing surfaces facing the respective outwardly facing surface of the semiconductor body and disposed symmetrically toward the respective semiconductor body surface, said identical inwardly facing surfaces providing pressure areas arranged symmetrically relative to a center line of the circuit element, said ductile electrodes having a dished shape with an up-turned rim surrounding an inner, outwardly facing bottom, each bottom having a diameter corresponding to that of the respective one of said pressure contact elements so that the radial position of the respective pressure contact element inside said rim is automatically fixed and centered relative to the corresponding ductile electrode, and resilient adhesive holding means between the edges of said ductile electrodes and the edges of said body for symmetrically holding said ductile electrodes on said outwardly facing surfaces of said semiconductor body, whereby the position of the respective contact elements is automatically centered.
Claim 3
Dependent Claim 31 words
The semiconductor circuit element of claim 1, wherein said resilient means comprises an adhesive elastic between the edges of said ductile electrodes, and the edges of the surfaces of said body.
Claim 4
Dependent Claim 36 words
The semiconductor circuit element of claim 1, wherein the diameters of the inwardly facing surfaces of said pressure contact elements in contact with the respective ductile element are smaller than the diameter of the semiconductor body.
Claim 5
Dependent Claim 20 words
The semiconductor circuit element as claimed in claim 1, wherein the pressure contact elements are discs having the same diameter.
Claim 6
Dependent Claim 32 words
The semiconductor circuit element as claimed in claim 1, wherein the pressure contact elements are manufactured from hard copper having contact areas for contacting said outwardly facing surfaces of said semiconductor body.
Claim 7
Dependent Claim 33 words
The semiconductor circuit element as claimed in claim 1, wherein the pressure contact elements are manufactured from a copper alloy having contact areas for contacting said outwardly facing surfaces of said semiconductor body.
Claim 8
Dependent Claim 22 words
The semiconductor circuit element as claimed in claim 1, wherein said contact areas of the pressure contact elements are hard copper plated.
Claim 9
Dependent Claim 21 words
The semiconductor circuit element as claimed in claim 1, wherein said contact areas of the pressure contact elements are nickel plated.
Claim 10
Dependent Claim 25 words
The semiconductor circuit element as claimed in claim 1, wherein said outwardly facing surfaces of the semiconductor body are provided with a thin metal layer.
Claim 11
Dependent Claim 21 words
The semiconductor circuit element as claimed in claim 9, wherein said thin metal layer of the semiconductor body comprises nickel plating.
Claim 12
Dependent Claim 21 words
The semiconductor circuit element as claimed in claim 9, wherein said thin metal layer of the semiconductor body comprises gold plating.
Claim 13
Dependent Claim 26 words
The semiconductor circuit element as claimed in claim 1, wherein said ductile electrodes are made of silver which has a thickness of at least 0.05 mm.
Claim 14
Dependent Claim 31 words
The semiconductor cIrcuit element as claimed in claim 1, wherein said pressure contact elements are laid loosely inside the rim of the ductile electrodes on both sides of the semiconductor body.
Claim 15
Dependent Claim 56 words
The semiconductor circuit element as claimed in claim 1, wherein said ductile electrodes have an end face opposite said bottom, said end face providing solderless pressure contact means in contact with the respective outwardly facing surface of the semiconductor body, and said bottom providing solderless pressure contact means in contact with the respective pressure contact element.
Claim 16
Dependent Claim 54 words
The semiconductor circuit element as claimed in claim 1, comprising an opening in one pressure contact element and in the respective ductile electrode, a control electrode in electrical contact with the semiconductor body in said opening and a further corresponding opening in the opposite ductile electrode on the other surface of the semiconductor body.

References Cited (Backward Citations)

US3058041A Cited
US3261396A Cited
US3313987A Cited
US3396316A Cited
US3395321A Cited
US3581163A Cited
US3597524A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1977-03-25 1977-09-24 1978-03-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1981-03-25 1981-09-24 1982-03-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1985-03-25 1985-09-24 1986-03-26 $7700.00 Window Closed / Lapsed

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