US3806830A
Expired / Lapsed
US
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Composite semiconductor laser device
Assignee: NEC Corp
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Filing: 1973-02-09
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Granted: 1974-04-23
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Expires: 1993-02-09
Abstract
Abstract A composite semiconductor laser device includes a multi-layer heterostructure including first and second double heterostructures. One of the double heterostructures forms a laser structure in which a p-type layer and an n-type layer, each of which has a relatively low index of refraction, sandwich an active region of a relatively high index of refraction. The second double heterostructure, which forms an optical transmission line, includes layers of the same conductivity type. The energy gap of the central layer of the optical transmission line structure is greater than that of the active region. The central layer is crystallographically connected with the lowrefractive index layer of the laser structure of the same conductivity type.
Inventors
- 👤 H Yonezu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 11:20
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/1028; H01S5/1032; H01S5/1071
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
151 words
A composite semiconductor laser device comprising a semiconductor substrate and a multilayer heterostructure including first and second double heterostructures formed on said substrate, said first double heterostructure forming a double heterostructure laser structure in which a p-type layer and an ntype layer, each of which has a relative low refractive index, sandwich an active region of a relatively high refractive index layer therebetween, said second double heterostructure forming an optical transmission line structure in which all the layers are of an identical conductivity type, the energy gap of the central layer of said second double heterostructure being greater than that of said active region, said central layer being crystallographically connected with one of the low-refractive index layers of the same conductivity type, the thicknesses of the respective layers being so controlled such that light waves propagating within said double heterostructures permeate out of said central layer of said second double heterostructure.
Claim 2
Dependent Claim
151 words
A composite semiconductor laser device comprising a semiconductor substrate and a multilayer heterostructure including first and second double heterostructures formed on said substrate, said first double heterostructure forming a double heterostructure laser structure in which a p-type layer and an ntype layer, each of which has a relative low refractive index, sandwich an active region of a relatively high refractive index layer therebetween, said second double heterostructure forming an optical transmission line structure in which all the layers are of an identical conductivity type, the energy gap of the central layer of said second double heterostructure being greater than that of said active region, said central layer being crystallographically connected with one of the low-refractive index layers of the same conductivity type, the thicknesses of the respective layers being so controlled such that light waves propagating within said double heterostructures permeate out of said central layer of said second double heterostructure.
Claim 3
Dependent Claim
29 words
The composite semiconductor laser device of claim 1, in which said active region is of the same conductivity type as the layers in said optical transmission line double heterostructure.
Claim 4
Dependent Claim
26 words
The composite semiconductor laser device of claim 2, in which said one of said low-refractive index layers is common to said first and second double heterostructures.
Claim 5
Dependent Claim
37 words
The composite semiconductor laser device of claim 3, in which the index of refraction of said central layer is greater than that of the layers of said second double heterostructure between which said central layer is sandwiched.
Claim 6
Dependent Claim
26 words
The composite semiconductor laser device of claim 1, in which said one of said low-refractive index layers is comMon to said first and second double heterostructures.
Claim 7
Dependent Claim
37 words
The composite semiconductor laser device of claim 5, in which the index of refraction of said central layer is greater than that of the layers of said second double heterostructure between which said central layer is sandwiched.
Claim 8
Dependent Claim
37 words
The composite semiconductor laser device of claim 1, in which the index of refraction of said central layer is greater than that of the layers of said second double heterostructure between which said central layer is sandwiched.
Claim 9
Dependent Claim
46 words
The composite semiconductor laser device of claim 1, further comprising an insulating film on the surface of said multilayer heterostructure, and an electrode of a preselected configuration formed on said insulating film for defining, when current is passed therethrough, the active region of said laser portion.
Claim 10
Dependent Claim
30 words
The composite semiconductor laser device of claim 8, further comprising a light absorbent region formed in said optical transmission line portion at areas other than the desired optical transmission lines.
References Cited (Backward Citations)
US3691476A
Cited
US3733561A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-04-22 | 1977-10-22 | 1978-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-04-22 | 1981-10-22 | 1982-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-04-22 | 1985-10-22 | 1986-04-23 | $7700.00 | Window Closed / Lapsed |