US3817798A
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Method of forming integrated semiconductor devices with iii-v compounds
Assignee: International Business Machines Corp
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Filing: 1971-11-19
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Granted: 1974-06-18
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Expires: 1991-11-19
Abstract
Abstract THE DISCLOSURE RELATES TO INTEGRATED SEMICONDUCTOR DEVICES FORMED WITH III-V COMPOUNDS. AS AN EXAMPLE, A GALLIUM ARSENIDE SUBSTRATE IS COATED WITH A LAYER OF SILICON DIOXIDE PRIOR TO THE APPLICATION OF A MASKING LAYER OF SILICON NITRIDE. THE SILICON DIOXIDE LAYER PASSES THE ZINC DIFFUSANT BUT PREVENTS LATERAL DIFFUSION SPIKES. THIS PROCESS IS PARTICULARLY USEFUL FOR FORMING AN ARRAY OF CLOSELY SPACED LIGHT EMITTING DIODES.
Inventors
- 👤 W Jacobus
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 05:47
CPC Classifications
H; H10; H10H; H10H29/00; H10H29/10; H10H29/14; H10H29/142; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/662; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433; H10P95/00; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/923
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-06-17 | 1977-12-17 | 1978-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-06-17 | 1981-12-17 | 1982-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-06-17 | 1985-12-17 | 1986-06-18 | $7700.00 | Window Closed / Lapsed |