US3911376A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gallium arsenide injection lasers
Assignee: International Standard Electric Corp
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Filing: 1971-10-04
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Granted: 1975-10-07
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Expires: 1991-10-04
Abstract
Abstract A semiconductor injection laser includes a thin inner GaAs p-n junction layer between two outer GaAlAs layers which are backed by further thin outer GaAlAs layers with a heavier doping of AlAs. This reduces optical losses. Optical energy is further confined within the inner layers and the lasing threshold reduced by added outer GaAs layers of low electrical and thermal resistivity.
Inventors
- 👤 George Horace B Thompson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 01:30
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H01; H01S; H01S5/00; H01S5/30; H01S5/305; H10H20/822; H10H20/824; Y; Y10; Y10S; Y10S148/00; Y10S148/067; Y10S148/072
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
81 words
A heterostructure GaAs - GaAlAs injection laser comprising a layer of GaAs sandwiched between two layers of GaAlAs, the GaAs layer containing the p-n junction of the laser and being sufficiently thin to provide carrier confinement, at least one of said GaAlAs layers being an inner layer, and an outer GaAlAs layer over said inner layer and having a greater mole percentage of AlAs than said inner layer, said two GaAlAs layer being of sufficient thickness to provide optical confinement therein.
Claim 2
Dependent Claim
81 words
A heterostructure GaAs - GaAlAs injection laser comprising a layer of GaAs sandwiched between two layers of GaAlAs, the GaAs layer containing the p-n junction of the laser and being sufficiently thin to provide carrier confinement, at least one of said GaAlAs layers being an inner layer, and an outer GaAlAs layer over said inner layer and having a greater mole percentage of AlAs than said inner layer, said two GaAlAs layer being of sufficient thickness to provide optical confinement therein.
Claim 3
Dependent Claim
40 words
The device of claim 1 wherein both of said GaAlAs layers about said GaAs layer are inner layers and including respective outer GaAlAs layers over each inner layer having a greater mole percentage of AlAs than the respective inner layers.
Claim 4
Dependent Claim
31 words
The device of claim 1 including an additional outer GaAs layer and a heat sink, the other said layers being bonded to said heat sink via said additional layer of GaAs.
Claim 5
Dependent Claim
24 words
The device of claim 1 wherein said layers of GaAs and GaAlAs are disposed on a substrate at a side opposite said heat sink.
Claim 6
Dependent Claim
20 words
The device of claim 2 wherein said inner and outer layers comprise respectively Ga(1-x)AlxAs and Ga(1-y)AlyAs where y > x.
Claim 7
Dependent Claim
33 words
The device of claim 5 wherein said inner layer contains about 5 mole percent of AlAs and said outer GaAlAs layer contains a mole percentage of AlAs of between 10 to 35 percent.
Claim 8
Dependent Claim
72 words
FOR USE IN A SEMICONDUCTOR INJECTION LASER, A SEMICONDUCTOR BODY INCLUDING FIRST AND SECOND HETEROBOUNDARIES DEFINING A FIRST ACTIVE REGION THEREBETWEEN FOR CONFINING RECOMBINATION RADIATION, THIRD AND FOURTH HETEROBOUNDARIES DISPOSED BETWEEN SAID FIRST AND SECOND HETEROBOUNDARIES, THEREBY DEFINING A SECOND ACTIVE REGION FOR CONFINING CARRIERS, THE BANDGAP OF SAID SECOND ACTIVE REGION BEING SMALLER THAN THAT OF SAID FIRST ACTIVE REGION, AND A P-N JUNCTION LOCATED BETWEEN SAID FIRST AND FOURTH HETEROBOUNDARIES.
Claim 9
Dependent Claim
72 words
FOR USE IN A SEMICONDUCTOR INJECTION LASER, A SEMICONDUCTOR BODY INCLUDING FIRST AND SECOND HETEROBOUNDARIES DEFINING A FIRST ACTIVE REGION THEREBETWEEN FOR CONFINING RECOMBINATION RADIATION, THIRD AND FOURTH HETEROBOUNDARIES DISPOSED BETWEEN SAID FIRST AND SECOND HETEROBOUNDARIES, THEREBY DEFINING A SECOND ACTIVE REGION FOR CONFINING CARRIERS, THE BANDGAP OF SAID SECOND ACTIVE REGION BEING SMALLER THAN THAT OF SAID FIRST ACTIVE REGION, AND A P-N JUNCTION LOCATED BETWEEN SAID FIRST AND FOURTH HETEROBOUNDARIES.
Claim 10
Dependent Claim
58 words
The device of claim 7 including first and second opposite conductivity type wide bandgap regions positioned on opposite sides of said first active region defining said first and second heteroboundaries, said first active region including third and fourth opposite conductivity type narrow bandgap regions on opposite sides of said second active region defining said third and fourth heteroboundaries.
Claim 11
Dependent Claim
40 words
The device of claim 7 including first and second opposite conductivity type wide bandgap regions on opposite sides of said first active region, said first active region including said second active region of smaller bandgap than said first active region.
Claim 12
Dependent Claim
20 words
The device of claim 9 wherein said second active region is disposed nearer to one of said wider bandgap regions.
Claim 13
Dependent Claim
30 words
The device of claim 8 wherein the difference in bandgap between said wide bandgap regions and said first active region is greater than that between said first and second regions.
Claim 14
Dependent Claim
39 words
The device of claim 8 wherein said first and second wide bandgap regions comprise respectively Ga(1-y)AlyAs(n) and Ga(1-y)AlyAs(p), said third and fourth regions comprise Ga(1-x)AlxAs(n) and Ga(1-x)AlxAs(p) respectively, and said second active region comprises GaAs, where y > x.
References Cited (Backward Citations)
US3691476A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-10-06 | 1979-04-07 | 1979-10-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-10-06 | 1983-04-07 | 1983-10-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-10-06 | 1987-04-07 | 1987-10-07 | $7700.00 | Window Closed / Lapsed |