US3916066A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Conducting material for conducting devices and method for forming the same
Assignee: Universal Oil Products Co
•
Filing: 1973-08-16
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Granted: 1975-10-28
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Expires: 1993-08-16
Abstract
Abstract Electrically conductive material for conducting devices comprises a refractory inorganic oxide and a carbonaceous pyropolymer formed thereon, said conducting material having a conductivity at room temperature of from about 100 to about 102 inverse ohm-centimeters and is formed by reacting an organic pyrolyzable substance in the presence of a refractory oxide in a non-oxidizing atmosphere at a temperature of at least 400*C.
Inventors
- 👤 Karl J Youtsey
- 👤 Jr William C Holt
- 👤 Robert D Carnahan
- 👤 David H Spielberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 09:32
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/80; C04B41/81; C04B41/85; C04B41/45; C04B41/50; C04B41/5001; H; H01; H01B; H01B1/00; Y; Y10; Y10T; Y10T428/00; Y10T428/31
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
65 words
IN A SEMI-CONDUCTING DEVICE, A HIGH SURFACE AREA SEMICOMDUCTING MATERIAL THEREFOR COMPRISING A CATALYTICALLY ACTIVE HIGH SURFACE AREA REFRACTORY INORGANIC OXIDE HAVIN A SURFACE AREA OF FROM 25 TO ABOUT 500 SQUARE METERS PER GRAM, AND A CARBONACEOUS PYROPOLYMER FORMING AT LAST A MONOLAYER ON SAID REFRACTORY OXIDE, SAID SEMI-CONDUCTING MATERIAL HAVING A CONDUCTIVITY AT ROOM TEMPERATURE OF FROM 10* TO ABOUT 10* INVERSE OHM-CENTIMETERS.
Claim 2
Dependent Claim
65 words
IN A SEMI-CONDUCTING DEVICE, A HIGH SURFACE AREA SEMICOMDUCTING MATERIAL THEREFOR COMPRISING A CATALYTICALLY ACTIVE HIGH SURFACE AREA REFRACTORY INORGANIC OXIDE HAVIN A SURFACE AREA OF FROM 25 TO ABOUT 500 SQUARE METERS PER GRAM, AND A CARBONACEOUS PYROPOLYMER FORMING AT LAST A MONOLAYER ON SAID REFRACTORY OXIDE, SAID SEMI-CONDUCTING MATERIAL HAVING A CONDUCTIVITY AT ROOM TEMPERATURE OF FROM 10* TO ABOUT 10* INVERSE OHM-CENTIMETERS.
Claim 3
Dependent Claim
18 words
The semi-conducting device as set forth in claim 1 in which said refractory inorganic oxide is an alumina.
Claim 4
Dependent Claim
16 words
The semi-conducting device as set forth in claim 2 in which said alumina is gamma -alumina.
Claim 5
Dependent Claim
17 words
The semi-conducting device as set forth in claim 1 in which said refractory inorganic oxide is silica.
Claim 6
Dependent Claim
17 words
The semi-conducting device as set forth in claim 1 in which said refractory inorganic oxide is silica-alumina.
References Cited (Backward Citations)
US3039897A
Cited
US3274034A
Cited
US3281394A
Cited
US3652697A
Cited
US3649565A
Cited
US3649566A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-10-27 | 1979-04-28 | 1979-10-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-10-27 | 1983-04-28 | 1983-10-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-10-27 | 1987-04-28 | 1987-10-28 | $7700.00 | Window Closed / Lapsed |