US3916434A — Hermetically sealed encapsulation of semiconducto…

Claim 1

Independent Claim 308 words

A HERMETICALLY SEALED ENCAPSULATING STRUCTURE FOR A SEMICONDUCTOR DEVICE WITH ELECTRODE FEED-THROUGH, COMPRISING: A CERAMIC CARRIER WAFER HAVING OPPOSITE SIDES AND TWO SPACED-APART PERTURES, LEADING FROM ONE TO THE SIDE, THE TWO APERTURES BEING LINED BY METALLIZATION, THERE BEING METALLIZATION ISLANDS ON SAID OTHER SIDE, SEPARATED FROM EACH OTHER AND CONTINUING THE RESPECTIVE METALLIZATION OF THE APERTUES, FIRST AND SECOND METAL LEADS IN SPACED-APART DISPOSITION ON ONE SIDE OF SAID CARRIER AND RESPECTIVELY IN METALLIC BOND WITH THE METALLIZATION OF THE APERTURES, THE LEADS RESPECTIVELY COVERING THE APERTURES ON THE ONE SIDE AND SEALINGLY CLOSING SAME BY METALLIC BOND WITH THE METALLIZATION, A COHERENT METALLIZATION LAYER ON THE OTHER SIDE OF THE CARRIER, NOT COVERING THE SAID OTHER SIDE COMPLETELY, LEAVING AT LEAST TWO EXPOSED AREAS INCLUDING AT LAST ONE AREA EACH AROUND SAID APERURES AND SAID ISLAND BUT EXTENDING UNINTERRUPTEDLY AROUND THE PERIPHERY OF THE ONE SAID OF THE CARRIER AND EXTENDING CONTIGUOUSLY WITH THE PERIPHERAL PORTION OF THE LAYER BETWEEN SAID EXPOSED AREAS, FOR SEPARATING THEM ON THAT OTHER SIDE OF THE CARRIER, A CERAMIC CAP HAVING A UNINTERRUPTED METALLIZED PERIPHERY ON ONE SIDE, AND METALLIC MEANS FOR SEALINGLY CONNECTING SAID CAP TO SAID CARRIER USING EXCLUSIVELY METAL-TO-METAL UNINTERRUPTED, HERMETICALLY SEALED BOND AROUND THE PERIPHERIES OF THE CAP AND THE CARRIER, TO ESTABLISH A HERMETICALY SEALED INTERIOR SPACE OF THE CAP AND CARRIER IN THE RESULTING CAP AND CARRIER ASSEMBLY, AT LEAST ONE SEMI-CONDUCTOR DEVICE BEING DISPOSED IN THE INTERIOR SPACE AS BETWEEN THE CAP AND THE CARRIER AND HAVING ELECTRODES CONNECTED TO THE RESPECTIVE METAL LINING OF THE OPENINGS AS EXPOSED TO THE INTERIOR OF TH CAP AND CARRIER ASSEMBLY, SAID METALLIC MEANS DISTRIBUTING GROUND POTENTIAL AROUND ALL SAID ISLANDS TO OBTAIN BETTER ELECTRICAL PERFORMANCE INCLUDING LOWER PARASITIC INDUCTANCE, AND SEPARATING THE SAID METAL LININGS AON THE SAID OTHER SAID PHYSICALLY AS WELL AS ELECTRICALLY.

Claim 2

Dependent Claim 308 words

A HERMETICALLY SEALED ENCAPSULATING STRUCTURE FOR A SEMICONDUCTOR DEVICE WITH ELECTRODE FEED-THROUGH, COMPRISING: A CERAMIC CARRIER WAFER HAVING OPPOSITE SIDES AND TWO SPACED-APART PERTURES, LEADING FROM ONE TO THE SIDE, THE TWO APERTURES BEING LINED BY METALLIZATION, THERE BEING METALLIZATION ISLANDS ON SAID OTHER SIDE, SEPARATED FROM EACH OTHER AND CONTINUING THE RESPECTIVE METALLIZATION OF THE APERTUES, FIRST AND SECOND METAL LEADS IN SPACED-APART DISPOSITION ON ONE SIDE OF SAID CARRIER AND RESPECTIVELY IN METALLIC BOND WITH THE METALLIZATION OF THE APERTURES, THE LEADS RESPECTIVELY COVERING THE APERTURES ON THE ONE SIDE AND SEALINGLY CLOSING SAME BY METALLIC BOND WITH THE METALLIZATION, A COHERENT METALLIZATION LAYER ON THE OTHER SIDE OF THE CARRIER, NOT COVERING THE SAID OTHER SIDE COMPLETELY, LEAVING AT LEAST TWO EXPOSED AREAS INCLUDING AT LAST ONE AREA EACH AROUND SAID APERURES AND SAID ISLAND BUT EXTENDING UNINTERRUPTEDLY AROUND THE PERIPHERY OF THE ONE SAID OF THE CARRIER AND EXTENDING CONTIGUOUSLY WITH THE PERIPHERAL PORTION OF THE LAYER BETWEEN SAID EXPOSED AREAS, FOR SEPARATING THEM ON THAT OTHER SIDE OF THE CARRIER, A CERAMIC CAP HAVING A UNINTERRUPTED METALLIZED PERIPHERY ON ONE SIDE, AND METALLIC MEANS FOR SEALINGLY CONNECTING SAID CAP TO SAID CARRIER USING EXCLUSIVELY METAL-TO-METAL UNINTERRUPTED, HERMETICALLY SEALED BOND AROUND THE PERIPHERIES OF THE CAP AND THE CARRIER, TO ESTABLISH A HERMETICALY SEALED INTERIOR SPACE OF THE CAP AND CARRIER IN THE RESULTING CAP AND CARRIER ASSEMBLY, AT LEAST ONE SEMI-CONDUCTOR DEVICE BEING DISPOSED IN THE INTERIOR SPACE AS BETWEEN THE CAP AND THE CARRIER AND HAVING ELECTRODES CONNECTED TO THE RESPECTIVE METAL LINING OF THE OPENINGS AS EXPOSED TO THE INTERIOR OF TH CAP AND CARRIER ASSEMBLY, SAID METALLIC MEANS DISTRIBUTING GROUND POTENTIAL AROUND ALL SAID ISLANDS TO OBTAIN BETTER ELECTRICAL PERFORMANCE INCLUDING LOWER PARASITIC INDUCTANCE, AND SEPARATING THE SAID METAL LININGS AON THE SAID OTHER SAID PHYSICALLY AS WELL AS ELECTRICALLY.

Claim 3

Dependent Claim 32 words

An encapsulating structure as in claim 1, wherein the metal means includes a metal ring of uninterrupted configuration in metal bond with each of said layers and respectively along said peripheries thereof.

Claim 4

Dependent Claim 96 words

An encapsulating structure as in claim 2, wherein said metallization layer leaves three distinctly exposed areas, two around said openings, the third one in between said two areas but in asymmetric configuration, leaving a wide metallized bridge on one side, a narrow on the other side of the third area; a metal bridge on the ring above and parallel to the narrow metallized bridge, the third area having a metallization island, separated and electrically insulated from said coherent layer, a semi-conductor device being mounted on said island; and a third metal lead connected to said ring.

Claim 5

Dependent Claim 40 words

An encapsulating structure as in claim 1, wherein metallization islands are respectively provided around said openings on said one side, in metal-to-metal bond to the metallization linings of the aperatures, separated from the coherent layer and within said exposed areas.

Claim 6

Dependent Claim 29 words

An encapsulating structure as in claim 1, including a metal heat sink bonded to the carrier on the other side, having recesses for insulative separation from said metal leads.

Claim 7

Dependent Claim 41 words

An encapsulating structure as in claim 1, wherein the metallization layer is flat, there being one additional exposed area with a flat metallization island, insulated from said layer but coplanar therewith, to provide mounting space that is flush with said layer.

Claim 8

Dependent Claim 272 words

In combination for use with a semi-conductor having a plurality of elements, a wafer made from a material having a high dielectric constant and defined by first and second opposite faces, there being at least a pair of apertures extending through the wafer in spaced relationship to each other, metallization layer means provided on the first face of the wafer and including at least two individual layers separated from each other and extending respectively through the apertures to the second face and separated by gaps to define a pair of conductive islands around the apertures on the first face for connection to individual ones of the elements in the semi-conductor, the layer means including an additional, uninterrupted metallization portion for connection to another one of the elements in the semi-conductor, circumscribing each of said islands but separated therefrom and including a portion that extends between the islands and a portion that circumscribes both said islands, the portion that extends between the islands provided to prevent capacitive coupling between the islands; first means extending on the second face of the wafer to the apertures and providing connections to the conductive islands at the apertures and sealing the apertures with metallic seal and providing for external connections to the individual elements, second means on the first face of the wafer for providing electrical continuity to the circumscribing additional portion of the additional uninterrupted metallization portion of the metallization layer means, and third means providing a cover on the first face of the wafer for the semi-conductor and the pair of metallization islands and the additional metallization portion, in metal-to-metal contact with said second means.

Claim 9

Dependent Claim 272 words

In combination for use with a semi-conductor having a plurality of elements, a wafer made from a material having a high dielectric constant and defined by first and second opposite faces, there being at least a pair of apertures extending through the wafer in spaced relationship to each other, metallization layer means provided on the first face of the wafer and including at least two individual layers separated from each other and extending respectively through the apertures to the second face and separated by gaps to define a pair of conductive islands around the apertures on the first face for connection to individual ones of the elements in the semi-conductor, the layer means including an additional, uninterrupted metallization portion for connection to another one of the elements in the semi-conductor, circumscribing each of said islands but separated therefrom and including a portion that extends between the islands and a portion that circumscribes both said islands, the portion that extends between the islands provided to prevent capacitive coupling between the islands; first means extending on the second face of the wafer to the apertures and providing connections to the conductive islands at the apertures and sealing the apertures with metallic seal and providing for external connections to the individual elements, second means on the first face of the wafer for providing electrical continuity to the circumscribing additional portion of the additional uninterrupted metallization portion of the metallization layer means, and third means providing a cover on the first face of the wafer for the semi-conductor and the pair of metallization islands and the additional metallization portion, in metal-to-metal contact with said second means.

Claim 10

Dependent Claim 38 words

The combination set forth in claim 7 wherein the means for providing continuity to the additional uninterrupted metallization portion of the metallization layer constitutes a metallic ring extending outwardly from the wafer along the periphery of the wafer.

Claim 11

Dependent Claim 44 words

The combination set forth in claim 8 wherein the cover means has a metallization layer contacting the metallic ring and the metallization layer on the cover means, the metallic ring and the metallization layer on the wafer are united to form a hermetic seal.

Claim 12

Dependent Claim 40 words

The combination set forth in claim 7 wherein a heat sink is disposed against the second face of the wafer to conduct heat from the wafer and is provided with recesses to separate the heat sink from the first means.

Claim 13

Dependent Claim 57 words

The combination set forth in claim 7, wherein a third metallization island is provided on the first face of the wafer between the first and second metallization islands for disposition of the semi-conductor on the third metallization island in electrically isolated relationship to the first and second metallization islands as well as to the additional metallization portion.

Claim 14

Dependent Claim 50 words

The combination set forth in claim 8, wherein a conductive bridge is connected to the metallic ring and disposed in the space between the cover means and the metallization layer means on the first face of the wafer to provide for a symmetrical distribution of current flow in the ring.

Claim 15

Dependent Claim 276 words

In combination, a semi-conductor having at least first, second and third elements controlling the operation of the semi-conductor, a wafer having a high dielectric constant and having first and second opposite faces and having first and second apertures spaced from each other and extending through the wafer between the first and second opposite faces of the wafer, first metallization layer means on the first face of the wafer, separated from each other and defining first and second islands disposed respectively around the first and second apertures and extending through the first and second apertures to the second face of the wafer; second metallizatijon layer means on the first face of the wafer circumscribing both said islands but being separated from each of them; third metallization layer means on the first face of the wafer and separated from each said first and second layer means; the semi-conductor being disposed on the third metallization layer means and providing electrical continuity between the first element in the semi-conductor and the second metallization layer and electrical connections being provided from the second element of the semi-conductor to the first metallization island and from the third element of the semi-conductor to the second metallization island, first and second conductors extending along the second face of the wafer and respectively providing electrical connections with the first and second metallization islands at the first and second apertures in the wafer, and means including a cover element having a high dielectric constant and a coherent metallization layer and being connected in metal-to-metal sealing connection to said second metallization layer means for providing a cover for the wafer at the first face of the wafer.

Claim 16

Dependent Claim 276 words

In combination, a semi-conductor having at least first, second and third elements controlling the operation of the semi-conductor, a wafer having a high dielectric constant and having first and second opposite faces and having first and second apertures spaced from each other and extending through the wafer between the first and second opposite faces of the wafer, first metallization layer means on the first face of the wafer, separated from each other and defining first and second islands disposed respectively around the first and second apertures and extending through the first and second apertures to the second face of the wafer; second metallizatijon layer means on the first face of the wafer circumscribing both said islands but being separated from each of them; third metallization layer means on the first face of the wafer and separated from each said first and second layer means; the semi-conductor being disposed on the third metallization layer means and providing electrical continuity between the first element in the semi-conductor and the second metallization layer and electrical connections being provided from the second element of the semi-conductor to the first metallization island and from the third element of the semi-conductor to the second metallization island, first and second conductors extending along the second face of the wafer and respectively providing electrical connections with the first and second metallization islands at the first and second apertures in the wafer, and means including a cover element having a high dielectric constant and a coherent metallization layer and being connected in metal-to-metal sealing connection to said second metallization layer means for providing a cover for the wafer at the first face of the wafer.

Claim 17

Dependent Claim 20 words

The combination set forth in claim 13 wherein the first and second conductors respectively seal the first and second apertures.

Claim 18

Dependent Claim 45 words

The combination set forth in claim 14 wherein the second metallization layer on the first face of the wafer extends around the periphery of the wafer and a metallization bond is provided between the cover means and the second metallization to hermetically seal the wafer.

Claim 19

Dependent Claim 47 words

The combination set forth in claim 13, and including fourth metallization layer means on the first face of the wafer continuous with said second layer means and extending between the first and second metallization islands to isolate the first and second metallization islands from any capacitive coupling.

Claim 20

Dependent Claim 51 words

The combination set forth in claim 16, wherein a metallic ring is electrically coupled between the second metallization layer means extending around the periphery of the portion to provide for an external connection to the first element on the semi-conductor, further being connected in metal-to-metal seal to said dielectric cover element.

Claim 21

Dependent Claim 48 words

The Combination set forth in claim 13, wherein the cover means includes a cover element having a high dielectric constant and a metallization layer and being united in metal to metal sealing connection to the second metallization layer means to provide electrical continuity and establish a hermetic seal.

Claim 22

Dependent Claim 181 words

In combination for use with a semi-conductor having a plurality of elements to provide connections to the member and to seal the member, a wafer made from a material having a high dielectric constant and defined by first and second opposite faces and having first and second apertures spaced from each other and extending through the wafer between the first and second faces of the apertures, first metallization layer means provided on the first face of the wafer and defining first and second metallization islands disposed respectively around the first and second apertures and extending through the apertures; second metallization layer means on the first face of the wafer extending between the first and second metallization islands and being separated therefrom for distributing ground potential around all said islands to obtain better electrical performance including lower parasitic inductance; first and second conductors extending along the second face of the wafer and respectively connected electrically to the first and second metallization islands at the first and second apertures, and means attached to the wafer to cover the second face of the wafer.

Claim 23

Dependent Claim 181 words

In combination for use with a semi-conductor having a plurality of elements to provide connections to the member and to seal the member, a wafer made from a material having a high dielectric constant and defined by first and second opposite faces and having first and second apertures spaced from each other and extending through the wafer between the first and second faces of the apertures, first metallization layer means provided on the first face of the wafer and defining first and second metallization islands disposed respectively around the first and second apertures and extending through the apertures; second metallization layer means on the first face of the wafer extending between the first and second metallization islands and being separated therefrom for distributing ground potential around all said islands to obtain better electrical performance including lower parasitic inductance; first and second conductors extending along the second face of the wafer and respectively connected electrically to the first and second metallization islands at the first and second apertures, and means attached to the wafer to cover the second face of the wafer.

Claim 24

Dependent Claim 27 words

The combination set forth in claim 19 wherein the first and second conductors respectively seal the first and second apertures at the second face of the wafer.

Claim 25

Dependent Claim 27 words

The combination set forth in claim 19, wherein the first face of the wafer is shaped to receive and support the semi-conductor on an additional metallization portion.

Claim 26

Dependent Claim 66 words

The combination set forth in claim 19 wherein a third metallization layer on the first face extending around the periphery of the first face of the wafer and wherein the cover means are united with the additional metallization portion around the periphery of such portion and wherein the first and second conductors respectively seal the first and second apertures at the second face of the wafer.

Claim 27

Dependent Claim 86 words

The combination set forth in claim 22 wherein a metallic ring is disposed on the additional metallization portion around the periphery of such portion and wherein the cover means is made from an insulating material and is provided with a metallization layer around the periphery of the cover means and the metallization layer on the cover means is united with the metallic ring and the metallic ring is united with the additional metallization portion to form a hermetic seal between the cover means and the wafer.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1978-10-27	1979-04-28	1979-10-28	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1982-10-27	1983-04-28	1983-10-28	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1986-10-27	1987-04-28	1987-10-28	$7700.00	Window Closed / Lapsed

Hermetically sealed encapsulation of semiconductor devices

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