US3962004A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pattern definition in an organic layer
Assignee: RCA Corp
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Filing: 1974-11-29
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Granted: 1976-06-08
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Expires: 1994-11-29
Abstract
Abstract An improved method of defining a pattern in a layer of organic material includes depositing a relatively thin layer of silicon dioxide on the layer of organic material, applying to the silicon dioxide layer a film of primer solution comprising a silane derivative, and then forming a photoresist etch mask on the film. By utilizing an ultrasonic etch bath, a uniform and well-defined pattern is etched in the layer of organic material.
Inventors
- 👤 Kurt Jacques Sonneborn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 11:42
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/11; H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H10P50/73; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/95
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
81 words
In a method of forming a pattern in a layer of cured organic material on a substrate wherein an etch mask comprising a layer of photoresist is formed above said layer of organic material using conventional photolithographic processes and said pattern defined by said mask is etched in said layer of organic material, the improvement in said method comprising the step of depositing a layer of silicon dioxide on said layer of cured organic material prior to forming said etch mask.
Claim 2
Dependent Claim
81 words
In a method of forming a pattern in a layer of cured organic material on a substrate wherein an etch mask comprising a layer of photoresist is formed above said layer of organic material using conventional photolithographic processes and said pattern defined by said mask is etched in said layer of organic material, the improvement in said method comprising the step of depositing a layer of silicon dioxide on said layer of cured organic material prior to forming said etch mask.
Claim 3
Dependent Claim
34 words
A method as defined in claim 1 further comprising the step of applying a film of primer solution comprising a silane derivative on said layer of silicon dioxide prior to forming said etch mask.
Claim 4
Dependent Claim
37 words
A method as defined in claim 2 wherein said primer solution is hexamethyldisilazane and wherein said applying step is performed by spinning said substrate and said hexamethyldisilazane upon said layer of silicon dioxide using a photoresist whirler.
Claim 5
Dependent Claim
31 words
A method as defined in claim 1 wherein the step of etching said pattern in said layer of organic material is performed by etching said pattern in an ultrasonic etch bath.
Claim 6
Dependent Claim
82 words
A method as defined in claim 1 wherein said depositing step is performed by: preheating said substrate to a temperature of about 300°C for approximately 2 minutes, and exposing said layer of organic material to gaseous silane and oxygen in the presence of an inert gas for approximately 2 minutes while maintaining said substrate at a temperature of about 300°C, whereby a relatively thin layer of silicon dioxide about 1,000 to 1,400A in thickness is deposited on said layer of organic material.
Claim 7
Dependent Claim
24 words
A method as defined in claim 1 wherein said substrate is a silicon wafer and said layer of organic material is a silicone resin.
Claim 8
Independent Claim
103 words
A method of forming a pattern in a layer of cured organic material on a substrate comprising the steps of: depositing a layer of silicon dioxide on said layer of cured organic material, applying a film of primer solution comprising a silane derivative on said layer of silicon dioxide, forming a layer of photoresist on said film, exposing selectively through a mask said layer of photoresist to light, developing said layer of photoresist, etching said pattern in said layer of cured organic material in an ultrasonic etch bath utilizing said layer of photoresist as an etch mask, and removing said layer of photoresist.
Claim 9
Independent Claim
103 words
A method of forming a pattern in a layer of cured organic material on a substrate comprising the steps of: depositing a layer of silicon dioxide on said layer of cured organic material, applying a film of primer solution comprising a silane derivative on said layer of silicon dioxide, forming a layer of photoresist on said film, exposing selectively through a mask said layer of photoresist to light, developing said layer of photoresist, etching said pattern in said layer of cured organic material in an ultrasonic etch bath utilizing said layer of photoresist as an etch mask, and removing said layer of photoresist.
Claim 10
Dependent Claim
25 words
A method as defined in claim 7 wherein said layer of cured organic material is a silicone resin and said substrate is a silicon wafer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-08 | 1979-12-08 | 1980-06-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-08 | 1983-12-08 | 1984-06-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-08 | 1987-12-08 | 1988-06-08 | $7700.00 | Window Closed / Lapsed |