US3969754A
Expired / Lapsed
US
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Semiconductor device having supporting electrode composite structure of metal containing fibers
Assignee: Hitachi Ltd
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Filing: 1974-10-21
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Granted: 1976-07-13
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Expires: 1994-10-21
Abstract
Abstract A semiconductor device comprising a semiconductor substrate and a supporting electrode disposed at least on one surface of the semiconductor substrate, in which the supporting electrode has such a composite structure that fibers having a coefficient of thermal expansion substantially equal to or lower than that of the semiconductor substrate are embedded in a matrix of a metal having electric and heat conductivities higher than those of the fibers. This supporting electrode has a satisfactorily high heat conductivity and the coefficient of thermal expansion thereof is freely adjustable.
Inventors
- 👤 Keiichi Kuniya
- 👤 Tomio Iizuka
- 👤 Masateru Suwa
- 👤 Tomio Yasuda
- 👤 Takeshi Sasaki
- 👤 Sakae Kikuchi
- 👤 Hideo Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:14
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/20; H10W70/22
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
80 words
A semiconductor device comprising a semiconductor substrate and a supporting electrode disposed in area contact on at least one surface of said semiconductor substrate, wherein said supporting electrode comprises a composite structure including a matrix of a metal and a plurality of fibers embedded in said metal matrix, said metal matrix having electric and heat conductivities higher than those of said fibers, said fibers having a coefficient of thermal expansion at most substantially equal to that of said semiconductor substrate.
Claim 2
Dependent Claim
80 words
A semiconductor device comprising a semiconductor substrate and a supporting electrode disposed in area contact on at least one surface of said semiconductor substrate, wherein said supporting electrode comprises a composite structure including a matrix of a metal and a plurality of fibers embedded in said metal matrix, said metal matrix having electric and heat conductivities higher than those of said fibers, said fibers having a coefficient of thermal expansion at most substantially equal to that of said semiconductor substrate.
Claim 3
Dependent Claim
116 words
A semiconductor device comprising a semiconductor substrate having major surfaces and at least one supporting electrode disposed on at least one of said major surfaces of said semiconductor substrate for supporting the semiconductor substrate in face-to-face area contact through a bonding layer, wherein said supporting electrode comprises a composite structure including a matrix of a metal and a plurality of fibers embedded in said metal matrix, said metal matrix having electric and heat conductivities higher than those of said fibers, said fibers having a coefficient of thermal expansion at most substantially equal to that of said semiconductor substrate, and said fibers being arranged in said metal matrix in parallel with the surface of said semiconductor substrate.
Claim 4
Dependent Claim
116 words
A semiconductor device comprising a semiconductor substrate having major surfaces and at least one supporting electrode disposed on at least one of said major surfaces of said semiconductor substrate for supporting the semiconductor substrate in face-to-face area contact through a bonding layer, wherein said supporting electrode comprises a composite structure including a matrix of a metal and a plurality of fibers embedded in said metal matrix, said metal matrix having electric and heat conductivities higher than those of said fibers, said fibers having a coefficient of thermal expansion at most substantially equal to that of said semiconductor substrate, and said fibers being arranged in said metal matrix in parallel with the surface of said semiconductor substrate.
Claim 5
Dependent Claim
148 words
A semiconductor device comprising a semiconductor substrate having major surfaces and at least one supporting electrode disposed on at least one of said major surfaces of said semiconductor substrate for supporting the semiconductor substrate in face-to-face area contact through a bonding layer, wherein said supporting electrode comprises a composite structure including a matrix of a metal and a plurality of fibers embedded in said metal matrix, said metal matrix having electric and heat conductivities higher than those of said fibers, said fibers having a coefficient of thermal expansion at most substantially equal to that of said semiconductor substrate, and said fibers being arrayed in said metal matrix in parallel with the surface of said semiconductor substrate in such a fashion that the content thereof in said metal matrix is gradually reduced from the matrix portion engaging said semiconductor substrate toward the matrix portion remote from said semiconductor substrate.
Claim 6
Dependent Claim
148 words
A semiconductor device comprising a semiconductor substrate having major surfaces and at least one supporting electrode disposed on at least one of said major surfaces of said semiconductor substrate for supporting the semiconductor substrate in face-to-face area contact through a bonding layer, wherein said supporting electrode comprises a composite structure including a matrix of a metal and a plurality of fibers embedded in said metal matrix, said metal matrix having electric and heat conductivities higher than those of said fibers, said fibers having a coefficient of thermal expansion at most substantially equal to that of said semiconductor substrate, and said fibers being arrayed in said metal matrix in parallel with the surface of said semiconductor substrate in such a fashion that the content thereof in said metal matrix is gradually reduced from the matrix portion engaging said semiconductor substrate toward the matrix portion remote from said semiconductor substrate.
Claim 7
Dependent Claim
128 words
A semiconductor device comprising a semiconductor substrate having major surfaces and at least one supporting electrode disposed on at least one of said major surfaces of said semiconductor substrate for supporting the semiconductor substrate in face-to-face area contact through a bonding layer, wherein said supporting electrode comprises a composite structure including a matrix of a metal and a plurality of fibers embedded in said metal matrix, said metal matrix having electric and heat conductivities higher than those of said fibers, said fibers having a coefficient of thermal expansion at most substantially equal to that of said semiconductor substrate, and said plurality of fibers crossing one another to form a plurality of networks which are disposed in said metal matrix in parallel with the surface of said semiconductor substrate.
Claim 8
Dependent Claim
128 words
A semiconductor device comprising a semiconductor substrate having major surfaces and at least one supporting electrode disposed on at least one of said major surfaces of said semiconductor substrate for supporting the semiconductor substrate in face-to-face area contact through a bonding layer, wherein said supporting electrode comprises a composite structure including a matrix of a metal and a plurality of fibers embedded in said metal matrix, said metal matrix having electric and heat conductivities higher than those of said fibers, said fibers having a coefficient of thermal expansion at most substantially equal to that of said semiconductor substrate, and said plurality of fibers crossing one another to form a plurality of networks which are disposed in said metal matrix in parallel with the surface of said semiconductor substrate.
Claim 9
Dependent Claim
21 words
A semiconductor device as claimed in claim 2, wherein the content of said fibers is more than 20 % by volume.
Claim 10
Dependent Claim
29 words
A semiconductor device as claimed in claim 2, wherein the content of said fibers in the matrix portion engaging said semiconductor substrate is more than 50 % by volume.
Claim 11
Dependent Claim
90 words
A semiconductor device comprising a semiconductor substrate having major surfaces, said semiconductor substrate being one selected from the group of silicon and germanium and a supporting electrode disposed on at least one of said major surfaces of said semiconductor substrate for supporting the semiconductor substrate in face-to-face area contact through a bonding layer, wherein said supporting electrode comprises a composite structure including a matrix of copper and a plurality of tungsten fibers embedded in said copper matrix in parallel with said at least one major surface of the semiconductor substrate.
Claim 12
Dependent Claim
90 words
A semiconductor device comprising a semiconductor substrate having major surfaces, said semiconductor substrate being one selected from the group of silicon and germanium and a supporting electrode disposed on at least one of said major surfaces of said semiconductor substrate for supporting the semiconductor substrate in face-to-face area contact through a bonding layer, wherein said supporting electrode comprises a composite structure including a matrix of copper and a plurality of tungsten fibers embedded in said copper matrix in parallel with said at least one major surface of the semiconductor substrate.
Claim 13
Dependent Claim
21 words
A semiconductor device as claimed in claim 3, wherein the content of said fibers is more than 20 % by volume.
Claim 14
Dependent Claim
29 words
A semiconductor device as claimed in claim 3, wherein the content of said fibers in the matrix portion engaging said semiconductor substrate is more than 50 % by volume.
Claim 15
Dependent Claim
32 words
A semiconductor device as claimed in claim 3, wherein said metal constituting the matrix is copper and said fibers is one selected from the group of molybdenum, tungsten, graphite and iron-nickel-cobalt alloy.
Claim 16
Dependent Claim
21 words
A semiconductor device as claimed in claim 4, wherein the content of said fibers is more than 20 % by volume.
Claim 17
Dependent Claim
29 words
A semiconductor device as claimed in claim 4, wherein the content of said fibers in the matrix portion engaging said semiconductor substrate is more than 50 % by volume.
Claim 18
Dependent Claim
32 words
A semiconductor device as claimed in claim 4, wherein said metal constituting the matrix is copper and said fibers is one selected from the group of molybdenum, tungsten, graphite and iron-nickel-cobalt alloy.
Claim 19
Dependent Claim
32 words
A semiconductor device as claimed in claim 2, wherein said metal constituting the matrix is copper and said fibers is one selected from the group of molybdenum, tungsten, graphite and iron-nickel-cobalt alloy.
Claim 20
Dependent Claim
52 words
A semiconductor device as claimed in claim 1, wherein said plurality of fibers are embedded in said metal matrix in a gradually varying volume content, said volume content decreasing from the portion of said composite structure contacting said semiconductor substrate to a portion of said composite structure remote from said semiconductor substrate.
Claim 21
Dependent Claim
31 words
A semiconductor device as claimed in claim 15, wherein said volume content of said fibers in said metal matrix exhibits a total volume content of more than 20 % by volume.
Claim 22
Dependent Claim
37 words
A semiconductor device as claimed in claim 16, wherein said portion of said composite structure contacting said semiconductor substrate has a volume content of said fibers in said metal matrix of at least 50 % by volume.
Claim 23
Dependent Claim
34 words
A semiconductor device as claimed in claim 15, wherein said volume content of said fibers in said metal matrix exhibits a total volume content from about 20 % to about 50 % by volume.
Claim 24
Dependent Claim
32 words
A semiconductor device as claimed in claim 1, wherein said metal constituting the matrix is copper and said fibers is one selected from the group of molybdenum, tungsten, graphite and iron-nickel-cobalt alloy.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-07-13 | 1980-01-12 | 1980-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-07-13 | 1984-01-12 | 1984-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-07-13 | 1988-01-12 | 1988-07-13 | $7700.00 | Window Closed / Lapsed |