Metallic ground grid for integrated circuits

Claim 1

A semiconductor integrated circuit comprising: a body of semiconductor material of a first conductivity type having a first planar surface; a plurality of spaced apart planar regions adjacent said first surface, each of a second conductivity type, opposite said first conductivity type, said regions including semiconductive components; isolation barriers of semiconductor material of said first conductivity type adjacent said first surface of said first conductivity type separating said planar regions; a first continuous conductor deposited on a substantial portion of said isolation barriers and connected directly to a source of common potential; a first homogenous insulation layer of a first material covering said first planar surface and the lateral edges of said first conductor and having a thickness greater than the thickness of said first conductor so as to define a second planar surface with a channel therein above said first conductor; a second insulation layer of a second material in said channel covering said first conductor and having a thickness substantially equal to the thickness of said first insulation layer minus the thickness of said first conductor so as to complete said second planar surface; and second conductors overlying said second planar surface and interconnecting said first conductor and selected planar areas of said semiconductor components through apertures in said first and second insulation layers.