Abstract The disclosure relates to methods of producing light-emitting (LED) device quality gallium arsenide phosphide on germanium or silicon substrate wafers. In accordance with one embodiment of this disclosure, a germanium substrate is coated with silicon nitride (Si 3 N 4 ), boron nitride or silicon dioxide deposited by RF plasma which removes the pinholes which are found in silicon dioxide coatings deposited by standard techniques. The coatings should be of sufficient thickness, with few pinholes and high enough density to prevent passage of HCL gas therethrough and formation of germanium chloride (GeCl 4 ) gas. The silicon nitride is removed from one surface of the substrate and 10 micron layer of gallium arsenide is deposited thereon. A layer of graded gallium arsenide phosphide is then deposited on the gallium arsenide phosphide as in the previous embodiments to provide the completed wafer having a germanium substrate.
A method of forming a wafer of semiconductor material which comprises the steps of: a. providing a substrate having a germanium surface region with at least one surface; b. coating the entire germanium region with a totally pinhole-free coating of silicon nitride; c. selectively removing said coating from a portion of said surface; d. coating said portion with epitaxial gallium arsenide; and e. coating said gallium arsenide with a graded epitaxial layer of gallium arsenide phosphide, said graded layer going from zero percent to 40 percent phosphorous and from 100 percent to 60 percent arsenic.
Claim 2
Independent Claim
95 words
A method of forming a wafer of semiconductor material which comprises the steps of: a. providing a substrate having a germanium surface region with at least one surface; b. coating the entire germanium region with a totally pinhole-free coating of silicon nitride; c. selectively removing said coating from a portion of said surface; d. coating said portion with epitaxial gallium arsenide; and e. coating said gallium arsenide with a graded epitaxial layer of gallium arsenide phosphide, said graded layer going from zero percent to 40 percent phosphorous and from 100 percent to 60 percent arsenic.
Claim 3
Dependent Claim
17 words
A method as set forth in claim 1 wherein said substrate provided in step (a) is germanium.
Claim 4
Dependent Claim
21 words
A method as set forth in claim 1 wherein said coating in step (b) is at least 20 microns in thickness.
Claim 5
Dependent Claim
21 words
A method as set forth in claim 2 wherein said coating in step (b) is at least 20 microns in thickness.