US4007037A
Expired / Lapsed
US
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Composition and method for chemically etching copper elements
Assignee: General Electric Co
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Filing: 1975-07-09
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Granted: 1977-02-08
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Expires: 1995-07-09
Abstract
Abstract This invention resides in compositions and methods for chemically etching copper elements. The etching solution of this invention is composed of materials which can be easily regenerated and the copper metal etched from the copper element easily recovered. The etching solution is also of a type that is substantially self-sustaining.
Inventors
- 👤 Robert M. Lukes
- 👤 Jeffrey C. Sellins
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 09:40
CPC Classifications
C; C23; C23F; C23F1/00; C23F1/10; C23F1/14; C23F1/16; C23F1/18; C23F1/46
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
114 words
A copper etching process, comprising: contacting a copper element to be etched with an aqueous etching solution, said copper etching solution comprising a cupric compound and a complexing agent, said cupric compound being water soluble and substantially free of anions capable of forming a stable complex ion with cuprous ions in said solution and said complexing agent being a material capable of forming a stable complex ion with cuprous ions and being substantially free of material capable of forming a complex ion with cupric ion; and maintaining the copper element in contact with said etching solution under etching conditions for a time sufficient to etch said copper element and form a cuprous complex ion.
Claim 2
Dependent Claim
114 words
A copper etching process, comprising: contacting a copper element to be etched with an aqueous etching solution, said copper etching solution comprising a cupric compound and a complexing agent, said cupric compound being water soluble and substantially free of anions capable of forming a stable complex ion with cuprous ions in said solution and said complexing agent being a material capable of forming a stable complex ion with cuprous ions and being substantially free of material capable of forming a complex ion with cupric ion; and maintaining the copper element in contact with said etching solution under etching conditions for a time sufficient to etch said copper element and form a cuprous complex ion.
Claim 3
Dependent Claim
33 words
A process, as set forth in claim 1, including maintaining the etching solution at a temperature in the range of about 0° C to about 100° C during etching of the copper element.
Claim 4
Dependent Claim
32 words
A process, as set forth in claim 1, including maintaining the pH of the etching solution in a pH range of about 0 to about 7 during etching of the copper element.
Claim 5
Dependent Claim
43 words
A process, as set forth in claim 1, including adding one of sulfuric acid, nitric acid, fluosilicic acid, acetic acid, formic acid, sulfamic acid, or mixtures thereof, to the etching solution for maintaining the pH of the etching solution in a preselected range.
Claim 6
Dependent Claim
30 words
A process, as set forth in claim 1, wherein the concentration of the cupric compound of the etching solution is in the range of about 0.1 to about 5.0 molar.
Claim 7
Dependent Claim
16 words
A process, as set forth in claim 1, wherein the etching solution includes a wetting agent.
Claim 8
Dependent Claim
34 words
A process, as set forth in claim 1, wherein the cupric compound of the etching solution is one of cupric sulphate, cupric nitrate, cupric sulfamate, cupric fluosilicate, cupric acetate, cupric formate, or mixtures thereof.
Claim 9
Dependent Claim
91 words
A process, as set forth in claim 1, wherein the complexing agent is one of carbon monoxide, ethylene, derivatives of ethylene having the formula ##STR2## where R 1 , R 2 and R 3 are each one of hydrogen or methyl, and R 4 is a member of the group consisting of H, --CH 2 OH, -- CH(C 2 H 5 )OH, --CH(CH.sub. 3)OH, -- C(CH 3 ) 2 OH, --CH 2 CH 2 OH, --CH 2 CH(CH 3 )OH, and --CH 2 C(CH 3 ) 2 OH, or mixtures thereof.
Claim 10
Dependent Claim
21 words
A process, as set forth in claim 1, wherein the etching solution is passed through space and onto the copper element.
Claim 11
Dependent Claim
19 words
A process, as set forth in claim 1, wherein the copper element is immersed in the copper etching solution.
Claim 12
Dependent Claim
21 words
A process, as set forth in claim 1, including adding complexing agent to the solution during etching of the copper element.
Claim 13
Dependent Claim
16 words
A process, as set forth in claim 1, including maintaining the pressure at greater than atmospheric.
Claim 14
Dependent Claim
16 words
A process, as set forth in claim 1, including maintaining the pressure at less than atmospheric.
Claim 15
Dependent Claim
60 words
A process, as set forth in claim 1, including physically treating the resultant copper etching solution having said cuprous complex and converting the cuprous complex to said cupric compound and said complexing agent; thereafter separating at least one of copper metal, cuprous oxide, or a mixture thereof, from the resultant solution; and recovering the resultant cupric compound and complexing agent.
Claim 16
Dependent Claim
41 words
A process, as set forth in claim 14, wherein the resultant copper etching solution is physically treated by at least one of heating said resultant solution, passing ultrasonic waves through said resultant solution, or at least partially distilling said resultant solution.
Claim 17
Dependent Claim
20 words
A process, as set forth in claim 14 wherein the resultant copper etching solution is treated by adding a solvent.
Claim 18
Dependent Claim
30 words
A process, as set forth in claim 14, wherein the copper material is separated from said treated solution by at least one of centrifuging, filtering, or decanting said resultant solution.
Claim 19
Dependent Claim
31 words
A process, as set forth in claim 14, including etching the copper element in an etching tank and passing the recovered resultant cupric compound and complexing agent to said etching tank.
Claim 20
Dependent Claim
71 words
An aqueous copper etching solution comprising water, a cupric compound, and a complexing agent, said cupric compound being water soluble and substantially free of anions capable of forming a stable complex ion with cuprous ions in said solution and said complexing agent being of a material capable of forming a stable complex ion with cuprous ions and being substantially free of material capable of forming a complex ion with cupric ion.
Claim 21
Dependent Claim
71 words
An aqueous copper etching solution comprising water, a cupric compound, and a complexing agent, said cupric compound being water soluble and substantially free of anions capable of forming a stable complex ion with cuprous ions in said solution and said complexing agent being of a material capable of forming a stable complex ion with cuprous ions and being substantially free of material capable of forming a complex ion with cupric ion.
Claim 22
Dependent Claim
97 words
An aqueous copper etching solution, as set forth in claim 19, wherein said complexing agent is one of carbon monoxide, ethylene, derivatives of ethylene having the formula ##STR3## where R 1 , R 2 , and R 3 are each one of hydrogen or methyl, and R 4 is a member of the group consisting of H, --CH 2 OH, -- CH(C 2 H 5 )OH, -- CH(CH 3 )OH, -- C(CH 3 ) 2 OH, --CH 2 CH 2 OH, --CH 2 CH(CH 3 )OH, and --CH 2 C(CH 3 ) 2 OH, or mixtures thereof.
Claim 23
Dependent Claim
33 words
An aqueous copper etching solution, as set forth in claim 19, wherein the cupric compound is one of cupric sulphate, cupric sulfamate, cupric nitrate, cupric fluosilicate, cupric acetate, cupric formate, or mixtures thereof.
Claim 24
Dependent Claim
96 words
An aqueous copper etching solution, as set forth in claim 21, wherein said complexing agent is one of carbon monoxide, ethylene, derivatives of ethylene having the formula ##STR4## where R 1 , R 2 , and R 3 are each one of hydrogen or methyl, and R 4 is a member of the group consisting of H, --CH 2 OH, -- CH(C 2 H 5 )OH, -- CH(CH 3 )OH, --C(CH 3 ) 2 OH, --CH 2 CH 2 OH, --CH 2 CH(CH 3 )OH, and --CH 2 C(CH 3 ).sub. 2 OH, or mixtures thereof.
Claim 25
Dependent Claim
19 words
An aqueous copper etching solution, as set forth in claim 19, wherein said etching solution includes a wetting agent.
Claim 26
Dependent Claim
30 words
An aqueous copper etching solution, as set forth in claim 19, wherein said etching solution has a cupric compound concentration in the range of about 0.1 to about 5.0 molar.
Claim 27
Dependent Claim
27 words
An aqueous copper etching solution, as set forth in claim 19, wherein said etching solution has a pH in the range of about 0 to about 7.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-02-08 | 1980-08-09 | 1981-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-02-08 | 1984-08-09 | 1985-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-02-08 | 1988-08-09 | 1989-02-08 | $7700.00 | Window Closed / Lapsed |