Cascaded transistor amplifier stages

Claim 2

In combination: first, second, third and fourth transistors of a first conductivity type, each having base and emitter and collector electrodes; first and second input terminals at the base electrodes of said first and said second transistors, respectively; means for connecting said first and said second transistors in long-tailed pair configuration including means for maintaining constant-current flow to an interconnection between the emitter electrodes of said first and said second transistors; means for regulating the emitter-to-collector potentials of said first and said second transistors including: means direct coupling the collector electrode of said first transistor and the base electrode of said third transistor; means direct coupling the collector electrode of said second transistor and the base electrode of said fourth transistor; and potential follower means for applying potentials to the emitter electrodes of said third and said fourth transistors that follow the potential at the interconnection between the emitter electrodes of said first and said second transistors; and means biasing the collector electrodes of said third and said fourth transistors for normal transistor operation.

Claim 3

The combination set forth in claim 1 wherein said potential follower means includes: fifth and sixth transistors each being of a second conductivity type opposite to said first conductivity type, and each having base and emitter and collector electrodes; means galvanically connecting the emitter electrodes of said third and said fifth transistors; means galvanically connecting the emitter electrodes of said fourth and said sixth transistors; and means direct coupling the interconnection between the emitter electrodes of said first and said second transistors to the base electrodes of said fifth and said sixth transistors.

Claim 4

The combination set forth in claim 2 wherein the number of forward-biased semiconductor junctions between the base electrodes of said third and fifth transistors is N, the number of forward-biased semiconductor junctions between the base electrodes of said fourth and sixth transistors is N, there is no substantial dropping resistor included in either said means galvanically connecting the emitter electrodes of said third and said fifth transistors or said means galvanically connecting the emitter electrodes of said fourth and said sixth transistors, and said means direct coupling the interconnection between the emitter electrodes of said first and said second transistors to the base electrodes of said fifth and said sixth transistors comprises a number of forward-biased semiconductor junctions connected between said interconnection and an interconnection between the base electrodes of said fifth and said sixth transistors, whereby each of said first and said second transistors is provided with substantially equal quiescent potentials at its base and collector electrodes.

Claim 5

The combination set forth in claim 2 wherein said first and said second transistors are of super-beta type and have concomitantly small maximum emitter-to-collector potential rating, the number of forward-biased semiconductor junctions between the base electrodes of said third and said fifth transistors is N, the number of forward-biased semiconductor junctions between the base electrodes of said fourth and said sixth transistors is N, there is no substantial dropping resistor included in either said means galvanically connecting the emitter electrodes of said third and said fifth transistors or said means galvanically connecting the emitter electrodes of said fourth and said sixth transistors, and said means direct coupling the interconnection between the emitter electrodes of said first and said second transistors to the base electrodes of said fifth and said sixth transistors comprises a number, M, less than N, of forward-biased semiconductor junctions connected between said interconnection and an interconnection between the base electrodes of said fifth and said sixth transistors, whereby each of said first and said second transistors is provided with a quiescent base-to-collector potential substantially equal to (N-M) times the offset potential across a forward-biased semiconductor junction, N and M being so chosen that the quiescent base-to-collector potentials of said first and said second transistors are smaller than their maximum emitter-to-collector potential rating.

Claim 6

The combination set forth in claim 2 having: an output terminal at the collector electrode of at least one of said fifth and said sixth transistors; means biasing the collector electrode of said fifth and said sixth transistors for normal transistor operation; a current amplifier having an input terminal to which the collector electrode of said third and said fourth transistors are galvanically connected, having a common terminal for connection to an operating potential, having an input circuit between its input and common terminals included in said means biasing the collector electrodes of said third and said fourth transistors, and having first and second output terminals galvanically connected respectively to the collector electrode of said first transistor and to the collector electrode of said second transistor, thereby completing a common-mode degenerative current-feedback connection between the collector and base electrodes of each said third and said fourth transistors.

Claim 7

The combination set forth in claim 5 having: a current amplifier having an input terminal to which the collector electrode of said third and said fourth transistors are galvanically connected, having a common terminal for connection to an operating potential, having an input circuit between its input and common terminals included in said means biasing the collector electrodes of said third and said fourth transistors, and having first and second output terminals galvanically connected respectively to the collector electrode of said first transistor and to the collector electrode of said second transistor, thereby completing a common-mode degenerative current-feedback connection between the collector and base electrodes of each of said third and said fourth transistors.

Claim 8

The combination set forth in claim 5 wherein: said means for maintaining constant current flow to an interconnection between the emitter electrodes of said first and second transistors includes: a current amplifier having an input terminal to which the collector electrode of said fifth transistor is galvanically connected, having a common terminal for connection to an operating potential, having an output terminal galvanically connected to the interconnection between the emitter electrodes of said first and said second transistors; and means for additively combining collector current of said fifth and said sixth transistors and applying the resultant sum current to the input terminal of said current amplifier.

Claim 9

The combination set forth in claim 2 wherein said means for maintaining constant-current flow to an interconnection between the emitter electrodes of said first and second transistors includes: a current amplifier having an input terminal, having a common terminal for connection to an operating potential, having an output terminal galvanically connected to the interconnection between the emitter electrodes of said first and said second transistors; and means for additively combining collector current of said fifth and said sixth transistors and applying the resultant sum current to the input terminal of said current amplifier.

Claim 10

the combination set forth in claim 1 wherein said potential follower means includes: a fifth transistor of a second conductivity type opposite to said first conductivity type, said fifth transistor having base and emitter and collector electrodes; means galvanically connecting the emitter electrode of said fifth transistor to the emitter electrodes of each of said third and said fourth transistors; and means direct coupling the interconnection between the emitter electrodes of said first and said second transistors to the base electrode of said fifth transistor.

Claim 11

The combination set forth in claim 9 wherein the number N of forward-biased semiconductor junctions between the base electrodes of said third and fifth transistors is N, the number N of forward-biased semiconductor junctions between the base electrodes of said fourth and fifth transistors is N, there is no substantial dropping resistor included in said means galvanically connecting the emitter electrode of said fifth transistor to the emitter electrodes of said third and said fourth transistors; and said means direct coupling the interconnection between the emitter electrodes of said first and said second transistors to the base electrode of said fifth transistor comprises a number of forward-biased semiconductor junctions connected between said interconnection and the base electrode of said fifth transistor, whereby each of said first and said second transistors is provided with substantially equal quiescent potentials at its base and collector electrodes.

Claim 12

The combination set forth in claim 9 wherein said first and said second transistors are of super-beta type and have a concomitantly small maximum emitter-to-collector potential rating, the number of forward-biased semiconductor junctions between the base electrodes of said third and said fifth transistors is N, the number of forward-biased semiconductor junctions between the base electrodes of said fourth and fifth transistors is N, there is no substantial dropping resistor included in said means galvanically connecting the emitter electrode of said fifth transistor to the emitter electrodes of said third and said fourth transistors, and said means direct coupling the interconnection between the emitter electrodes of said first and said second transistors to the base electrode of said fifth transistor consists of a number, M, less than N, of forward-biased semiconductor junctions connected between said interconnection and the base electrode of said fifth transistor, whereby each of said first and said second transistors is provided with a quiescent base-to-collector potential substantially equal to (N-M) times the offset potential across a forward-biased semiconductor junction, N and M being so chosen that the quiescent base-to-collector potentials of said first and said second transistors are smaller than the maximum emitter-to-collector potential rating.