US4035226A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of preparing portions of a semiconductor wafer surface for further processing
Assignee: RCA Corp
•
Filing: 1975-04-14
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Granted: 1977-07-12
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Expires: 1995-04-14
Abstract
Abstract A method for producing a pattern on a semiconductor wafer during the fabrication of semiconductor devices, including integrated circuits is disclosed. A master is pressed into a layer of moldable material which is on the wafer surface to define a pattern of at least one relatively thin region and relatively thick regions therein with a high degree of definition. Thereafter the whole layer is treated, for example, to remove, by etching for example, a relatively thin region to expose a portion of the wafer surface, the relatively thick regions remaining on the wafer surface.
Inventors
- 👤 Arnold Stanley Farber
- 👤 Jack Hilibrand
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 11:44
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/0002; H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P30/00; H10P30/20; H10P30/22; Y; Y10; Y10S; Y10S438/00; Y10S438/942
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
116 words
A method of preparing a portion of a semiconductor wafer surface comprising: providing a layer of moldable material on said surface; pressing a master into said layer of moldable material, said master having said portion defined in surface relief, at least a thin region of said layer remaining between said master and said semiconductor wafer surface; separating said master from said layer of moldable material, thereby leaving an imprint of said master in said layer of moldable material, said imprint comprising a relatively thin region and a relatively thick region in said layer; and uniformly etching said layer for a time sufficient to remove said relatively thin region but insufficient to remove said relatively thick region.
Claim 2
Independent Claim
116 words
A method of preparing a portion of a semiconductor wafer surface comprising: providing a layer of moldable material on said surface; pressing a master into said layer of moldable material, said master having said portion defined in surface relief, at least a thin region of said layer remaining between said master and said semiconductor wafer surface; separating said master from said layer of moldable material, thereby leaving an imprint of said master in said layer of moldable material, said imprint comprising a relatively thin region and a relatively thick region in said layer; and uniformly etching said layer for a time sufficient to remove said relatively thin region but insufficient to remove said relatively thick region.
Claim 3
Dependent Claim
36 words
A method as claimed in claim 1 wherein said providing step comprises: heating said moldable material to a fluid state; disposing said moldable material on said surface in its fluid state; and cooling said moldable material.
Claim 4
Dependent Claim
35 words
A method as claimed in claim 2 wherein said disposing step comprises: placing said moldable material on said semiconductor wafer surface; and spinning said wafer to distribute said moldable material relatively evenly over said surface.
Claim 5
Dependent Claim
22 words
A method as claimed in claim 1 further comprising: heating said moldable material until it is pliable prior to said pressing step.
Claim 6
Dependent Claim
17 words
A method as claimed in claim 1 further comprising: heating said master prior to said pressing step.
Claim 7
Dependent Claim
26 words
A method as claimed in claim 1 further comprising: evacuating the space between said master and said layer of moldable material prior to said pressing step.
Claim 8
Dependent Claim
33 words
A method as claimed in claim 1 further comprising: forming a layer of insulating material on said semiconductor wafer surface; and forming said layer of moldable material on said layer of insulating material.
Claim 9
Dependent Claim
37 words
A method as claimed in claim 7 further comprising: treating said layer for a time sufficient to remove said relatively thin region of said layer of moldable material, thereby exposing some of said layer of insulating material.
Claim 10
Dependent Claim
20 words
A method as claimed in claim 1 wherein: said imprint comprises a plurality of relatively thin regions of different thicknesses.
Claim 11
Dependent Claim
85 words
A method as claimed in claim 9 further comprising: treating said layer of moldable material for a time sufficient to remove one portion of said layer of one relatively thin region; thereby exposing one portion of said surface; processing said one portion of said surface; treating said layer of moldable material for a time sufficient to remove another portion of said layer of moldable material of another relatively thin region, thereby exposing another portion of said surface; and processing said another portion of said surface.
Claim 12
Dependent Claim
16 words
A method as claimed in claim 1 wherein: said layer of moldable material is a thermoplastic.
Claim 13
Independent Claim
126 words
A method of preparing a portion of a semiconductor wafer surface comprising: providing a layer of moldable material on said surface; pressing a master into said layer of moldable material, said master having said portion defined in surface relief, at least a thin region of said layer remaining between said master and said semiconductor wafer surface; separating said master from said layer of moldable material, thereby leaving an imprint of said master in said layer of moldable material, said imprint comprising a relatively thin region and a relatively thick region in said layer; and uniformly subjecting said layer to a source of conductivity modifiers, whereby more of said conductivity modifiers penetrate said semiconductor wafer surface beneath said relatively thin region than beneath said relatively thick region.
Claim 14
Independent Claim
126 words
A method of preparing a portion of a semiconductor wafer surface comprising: providing a layer of moldable material on said surface; pressing a master into said layer of moldable material, said master having said portion defined in surface relief, at least a thin region of said layer remaining between said master and said semiconductor wafer surface; separating said master from said layer of moldable material, thereby leaving an imprint of said master in said layer of moldable material, said imprint comprising a relatively thin region and a relatively thick region in said layer; and uniformly subjecting said layer to a source of conductivity modifiers, whereby more of said conductivity modifiers penetrate said semiconductor wafer surface beneath said relatively thin region than beneath said relatively thick region.
Claim 15
Dependent Claim
20 words
A method as claimed in claim 12 wherein said uniformly subjecting step comprises: ion implanting conductivity modifiers into said layer.
Claim 16
Dependent Claim
36 words
A method as claimed in claim 13 wherein said providing step comprises: heating said moldable material to a fluid state; disposing said moldable material on said surface in its fluid state; and cooling said moldable material.
Claim 17
Dependent Claim
35 words
A method as claimed in claim 14 wherein said disposing step comprises: placing said moldable material on said semiconductor wafer surface; and spinning said wafer to distribute said moldable material relatively evenly over said surface.
Claim 18
Dependent Claim
22 words
A method as claimed in claim 12 further comprising: heating said moldable material until it is pliable prior to said pressing step.
Claim 19
Dependent Claim
17 words
A method as claimed in claim 12 further comprising: heating said master prior to said pressing step.
Claim 20
Dependent Claim
26 words
A method as claimed in claim 12 further comprising: evacuating the space between said master and said layer of moldable material prior to said pressing step.
Claim 21
Dependent Claim
20 words
A method as claimed in claim 12 wherein: said imprint comprises a plurality of relatively thin regions of different thicknesses.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-07-11 | 1981-01-10 | 1981-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-07-11 | 1985-01-10 | 1985-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-07-11 | 1989-01-10 | 1989-07-12 | $7700.00 | Window Closed / Lapsed |