US4039359A
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Method of manufacturing a flattened semiconductor device
Assignee: Hitachi Ltd
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Filing: 1976-10-12
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Granted: 1977-08-02
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Expires: 1996-10-12
Abstract
Abstract A method of manufacturing a semiconductor device whose surface is flattened, comprises the steps of forming a first semiconductor oxide film at selected areas of a surface of a semiconductor substrate by local oxidation, applying a solution of a semiconductor compound onto the surface of the resultant substrate, the solution being adapted to form a second semiconductor oxide film whose etching rate is substantially equal to that of the underlying first semiconductor oxide film, vaporizing a solvent of the solution so as to form the second semiconductor oxide film on the substrate surface, and etching parts of the first and second semiconductor oxide films.
Inventors
- 👤 Nobuyuki Nakamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/61; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P95/00; H10P95/06; H10P95/062; H10P95/064; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/10; H10W10/13; H10W20/00; H10W20/01; H10W20/071; H10W20/092
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
97 words
A method of manufacturing a semiconductor device, comprising the steps of: a. preparing a substrate which has an uneven surface, b. applying onto the surface of said substrate a solution capable of being converted into a film by a heat-treatment, so that the film will cover concave parts of the substrate surface, said film exhibiting an etching rate to the same extent as that of an underlying layer, c. converting said solution into said film by said heat-treatment, and d. etching at least a part of said film and at least a part of said underlying layer.
Claim 2
Independent Claim
97 words
A method of manufacturing a semiconductor device, comprising the steps of: a. preparing a substrate which has an uneven surface, b. applying onto the surface of said substrate a solution capable of being converted into a film by a heat-treatment, so that the film will cover concave parts of the substrate surface, said film exhibiting an etching rate to the same extent as that of an underlying layer, c. converting said solution into said film by said heat-treatment, and d. etching at least a part of said film and at least a part of said underlying layer.
Claim 3
Dependent Claim
40 words
A method of manufacturing a semiconductor device according to claim 1, wherein said solution capable of forming a film exhibiting an etching rate to the same extent as that of an underlying layer is a solution of a semiconductor compound.
Claim 4
Dependent Claim
26 words
A method of manufacturing a semiconductor device according to claim 2, wherein said solution of a semiconductor compound is an alcoholic solution of a silicon compound.
Claim 5
Dependent Claim
43 words
A method of manufacturing a semiconductor device according to claim 1, wherein step (c) comprises heating said solution to such an extent to cause the removal of a component of said solution and to form said film on the surface of said substrate.
Claim 6
Dependent Claim
22 words
A method of manufacturing a semiconductor device according to claim 4, wherein said solution is an alcoholic solution of a semiconductor compound.
Claim 7
Dependent Claim
51 words
A method of manufacturing a semiconductor device according to claim 4, wherein said substrate is a semiconductor substate, said solution contains an impurity of a prescribed conductivity type, and step (c) comprises heating said solution to such an extent to cause the diffusion of said prescribed impurity into said semiconductor substrate.
Claim 8
Independent Claim
101 words
A method of manufacturing a semiconductor device, comprising the steps of: a. preparing a substrate which has an uneven surface, b. applying onto the surface of said substrate a solution, containing a prescribed impurity, capable of being converted into a film by a heat-treatment, so that the film will cover concave parts of the substrate surface, said film exhibiting an etching rate to the same extent as that of an underlying layer, c. converting said solution into said film by said heat-treatment, and d. etching at least a part of said film and at least a part of said underlying layer.
Claim 9
Independent Claim
101 words
A method of manufacturing a semiconductor device, comprising the steps of: a. preparing a substrate which has an uneven surface, b. applying onto the surface of said substrate a solution, containing a prescribed impurity, capable of being converted into a film by a heat-treatment, so that the film will cover concave parts of the substrate surface, said film exhibiting an etching rate to the same extent as that of an underlying layer, c. converting said solution into said film by said heat-treatment, and d. etching at least a part of said film and at least a part of said underlying layer.
Claim 10
Dependent Claim
48 words
A method of manufacturing a semiconductor device according to claim 7, wherein said solution containing a desired impurity capable of forming a film exhibiting an etching rate to the same extent as that of an underlying layer is a solution of a semiconductor compound containing said prescribed impurity.
Claim 11
Dependent Claim
34 words
A method of manufacturing a semiconductor device according to claim 8, wherein said solution of a semicondcutor compound containing said prescribed impurity is an alcoholic solution of a silicon compound containing a prescribed impurity.
Claim 12
Independent Claim
111 words
A method of manufacturing a semiconductor device, comprising the steps of: a. forming an oxidation resisting film on selected parts of a surface of a semiconductor substrate, b. oxidizing the substrate surface, other than said selected parts, to form a first semiconductor oxide film, c. applying a solution of a semiconductor compound onto said substrate surface formed with said first semiconductor oxide film, d. vaporizing a solvent of said solution, to form a second semiconductor oxide film on the substrate surface, and e. removing at least a part of said first semiconductor oxide film and at least a part of said second semiconductor oxide film from the surface of said substrate.
Claim 13
Independent Claim
111 words
A method of manufacturing a semiconductor device, comprising the steps of: a. forming an oxidation resisting film on selected parts of a surface of a semiconductor substrate, b. oxidizing the substrate surface, other than said selected parts, to form a first semiconductor oxide film, c. applying a solution of a semiconductor compound onto said substrate surface formed with said first semiconductor oxide film, d. vaporizing a solvent of said solution, to form a second semiconductor oxide film on the substrate surface, and e. removing at least a part of said first semiconductor oxide film and at least a part of said second semiconductor oxide film from the surface of said substrate.
Claim 14
Independent Claim
126 words
A method of manufacturing a semiconductor device, comprising the steps of: a. forming an oxidation resisting film on selected parts of a surface of a semiconductor substrate, b. oxidizing the substrate surface, other than said selected parts, to form a first semiconductor oxide film, c. applying a solution of a semiconductor compound containing a prescribed impurity onto said substrate surface formed with said first semiconductor oxide film, d. vaporizing a solvent of said solution so as to form a second semiconductor oxide film on the substrate surface, and simultaneously diffusing said prescribed impurity into said substrate, and e. removing at least a part of said first semiconductor oxide film and at least a part of said second semiconductor oxide film from the surface of said substrate.
Claim 15
Independent Claim
126 words
A method of manufacturing a semiconductor device, comprising the steps of: a. forming an oxidation resisting film on selected parts of a surface of a semiconductor substrate, b. oxidizing the substrate surface, other than said selected parts, to form a first semiconductor oxide film, c. applying a solution of a semiconductor compound containing a prescribed impurity onto said substrate surface formed with said first semiconductor oxide film, d. vaporizing a solvent of said solution so as to form a second semiconductor oxide film on the substrate surface, and simultaneously diffusing said prescribed impurity into said substrate, and e. removing at least a part of said first semiconductor oxide film and at least a part of said second semiconductor oxide film from the surface of said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-08-01 | 1981-01-31 | 1981-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-08-01 | 1985-01-31 | 1985-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-08-01 | 1989-01-31 | 1989-08-02 | $7700.00 | Window Closed / Lapsed |