US4044372A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photovoltaic cell having controllable spectral response
Assignee: UDT Sensors Inc
•
Filing: 1974-08-05
•
Granted: 1977-08-23
•
Expires: 1994-08-05
Abstract
Abstract The spectral response of a photovoltaic cell is controlled by modifying the minority carrier transport characteristics of the cell semiconductor body. Recombination centers are provided in the body that reduce the lifetime or diffusion distance of minority carriers. Thus a reduced percentage of minority carriers produced deep in the body by absorption of relatively long wavelength photons reach the cell junction, as compared with carriers produced at lesser depth by absorption of shorter wavelength photons. The result is a shift in the peak spectral response of the cell toward shorter wavelengths.
Inventors
- 👤 Harold Weinstein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:44
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y10; Y10S; Y10S148/00; Y10S148/023; Y10S438/00; Y10S438/904
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
83 words
A photovoltaic cell having preselected spectral response, comprising; a semiconductor body, a shallow junction in said body adjacent the front face thereof, and means modifying the minority carrier transport properties of said body to decrease the percentage of minority carriers, produced by absorption of photons of relatively long wavelength within said body, that reach said junction, so that the peak spectral response of said cell is shifted toward shorter wavelengths, said modifying means comprising recombination centers for said minority carriers in said body.
Claim 2
Dependent Claim
83 words
A photovoltaic cell having preselected spectral response, comprising; a semiconductor body, a shallow junction in said body adjacent the front face thereof, and means modifying the minority carrier transport properties of said body to decrease the percentage of minority carriers, produced by absorption of photons of relatively long wavelength within said body, that reach said junction, so that the peak spectral response of said cell is shifted toward shorter wavelengths, said modifying means comprising recombination centers for said minority carriers in said body.
Claim 3
Dependent Claim
19 words
A photovoltaic cell according to claim 1 wherein said recombination centers consist of beta-bombardment-induced lattice defects in said semiconductor.
Claim 4
Dependent Claim
40 words
A photovoltaic cell according to claim 1 wherein said recombination centers consist of gold dopant atoms in said semiconductor, said gold having a gradient of increasing dopant concentration with increasing distance into said body as measured from said shallow junction.
Claim 5
Dependent Claim
96 words
In a photovoltaic cell of the type having a shallow junction adjacent the front face of a semiconductor body, the process for altering the spectral response characteristics of said cell comprising; modifying the minority carrier transport characteristics of said body so that the percentage of the minority carriers produced by relatively long wavelength photon absorption deep in said body reaching said shallow junction is reduced relative to the percentage of minority carriers produced by relatively shorter wavelength photon absorption at lesser depths in said body, and wherein said modifying comprises producing recombination centers in said body.
Claim 6
Dependent Claim
96 words
In a photovoltaic cell of the type having a shallow junction adjacent the front face of a semiconductor body, the process for altering the spectral response characteristics of said cell comprising; modifying the minority carrier transport characteristics of said body so that the percentage of the minority carriers produced by relatively long wavelength photon absorption deep in said body reaching said shallow junction is reduced relative to the percentage of minority carriers produced by relatively shorter wavelength photon absorption at lesser depths in said body, and wherein said modifying comprises producing recombination centers in said body.
Claim 7
Dependent Claim
35 words
A process according to claim 4 wherein said producing consists of bombarding said body with high energy electrons to produce defects in said semiconductor body, said defects acting as recombination centers for said minority carriers.
Claim 8
Dependent Claim
38 words
A process according to claim 4 wherein said producing consists of doping said semiconductor body with gold atoms by diffusion through the rear face of said body, said gold atoms acting as recombination centers for said minority carriers.
References Cited (Backward Citations)
US3443102A
Cited
US3414434A
Cited
US3418473A
Cited
US3413145A
Cited
US3515576A
Cited
US3462311A
Cited
US3440113A
Cited
US3728592A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-08-22 | 1981-02-21 | 1981-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-08-22 | 1985-02-21 | 1985-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-08-22 | 1989-02-21 | 1989-08-23 | $7700.00 | Window Closed / Lapsed |