Abstract A layer of epitaxial silicon is grown on a silicon growth substrate, a thinayer of silicon dioxide or other suitable insulator is grown (in the case of silicon dioxide) or deposited (for other insulators) on the epitaxial layer, and a thick layer of polysilicon is grown on the dioxide layer. The silicon growth substrate is then removed, and the epitaxial layer is etched to form islands on the insulator layer. Some of the islands are doped to form an array of infrared sensitive detectors, and a large island is doped to act as CCD region. Electrical leads are fabricated, some to provide drive and output lines for the CCDs, other to provide connections of the detectors to respective CCDs, and yet others to provide common leads for the detectors.
An imaging infrared detector device including a support substrate: an insulating layer on one side of said substrate; an array of infrared detectors on said insulating layer; a CCD on said insulating layer including an array of unit cells at least equal in number to the number of detectors, each unit cell including a coupling region; and electrical lead means including a common connector to one side of each of said detectors, individual connectors from an opposite side of each of said detectors to a respective CCD coupling region, and drive connectors for said CCD.
Claim 2
Dependent Claim
95 words
An imaging infrared detector device including a support substrate: an insulating layer on one side of said substrate; an array of infrared detectors on said insulating layer; a CCD on said insulating layer including an array of unit cells at least equal in number to the number of detectors, each unit cell including a coupling region; and electrical lead means including a common connector to one side of each of said detectors, individual connectors from an opposite side of each of said detectors to a respective CCD coupling region, and drive connectors for said CCD.
Claim 3
Dependent Claim
12 words
The device as recited in claim 1 wherein said substrate is polysilicon.
Claim 4
Dependent Claim
14 words
The device as recited in claim 2 wherein said insulating layer is silicon dioxide.
Claim 5
Dependent Claim
14 words
The device as recited in claim 1 wherein said insulating layer is aluminum oxide.
Claim 6
Dependent Claim
15 words
The device as recited in claim 1 wherein said insulating layer is silicon dioxide glass.
Claim 7
Dependent Claim
14 words
The device as recited in claim 1 wherein said insulating layer is silicon nitride.
Claim 8
Dependent Claim
13 words
The device as recited in claim 2 wherein said detectors are extrinsic silicon.
Claim 9
Dependent Claim
16 words
The device as recited in claim 7 wherein said detectors are in a two dimensional array.