US4063901A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: NEC Corp
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Filing: 1977-03-29
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Granted: 1977-12-20
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Expires: 1997-03-29
Abstract
Abstract A method of manufacturing a semiconductor device is disclosed, in which a polycrystalline silicon layer is formed over a semiconductor substrate coated with an insulating layer with a window and a first kind of impurity is doped to a first predetermined portion of the polycrystalline silicon layer to a depth at least reaching the surface of the semiconductor substrate. Then a peripheral of the doped portion of the polycrystalline silicon layer is converted into an insulator, and a second kind of impurity is doped into a second predetermined portion of the polycrystalline silicon layer to a depth at least reaching the surface of the semiconductor substrate, thereby providing electrode wiring paths including the first and second predetermined portions.
Inventors
- 👤 Hiroshi Shiba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 04:46
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10P32/14; H10P32/1408; H10P32/1414; H10P32/30; H10P32/302; H10P95/00; H10W; H10W20/00; H10W20/01; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S438/00; Y10S438/914; Y10S438/923; Y10S438/96
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
102 words
A method of manufacturing a semiconductor device comprising the steps of forming a polycrystalline silicon layer over a major surface of a semiconductor substrate, introducing a first kind of impurity into a first portion of said polycrystalline silicon layer to its entire thickness, thereby providing a first doped region, coverting a peripheral of said first doped region into an insulator, and introducing a second kind of impurity into a second portion of said polycrystalline silicon layer to its entire thickness, thereby providing a second doped region, said first and second doped regions serving as electrical connection to regions in said semiconductor substrate.
Claim 2
Independent Claim
102 words
A method of manufacturing a semiconductor device comprising the steps of forming a polycrystalline silicon layer over a major surface of a semiconductor substrate, introducing a first kind of impurity into a first portion of said polycrystalline silicon layer to its entire thickness, thereby providing a first doped region, coverting a peripheral of said first doped region into an insulator, and introducing a second kind of impurity into a second portion of said polycrystalline silicon layer to its entire thickness, thereby providing a second doped region, said first and second doped regions serving as electrical connection to regions in said semiconductor substrate.
Claim 3
Dependent Claim
39 words
The method of claim 1, wherein said step of converting the peripheral of said first doped region includes the steps of converting the polycrystalline silicon at said peripheral into porous silicon and oxidizing said porous silicon into silicon oxide.
Claim 4
Dependent Claim
28 words
The method of claim 2, in which said step of converting into porous silicon is performed by using an electrolyte solution of ethylene glycol saturated with ammonium borate.
Claim 5
Dependent Claim
37 words
The method of claim 1, in which said substrate is covered with an insulating layer and at least one opening is formed in said insulating layer through which said polycrystalline silicon layer directly contacts with said substrate.
Claim 6
Independent Claim
121 words
A method of manufacturing a semiconductor device comprising the steps of providing a semiconductor substrate, forming an insulating film over the major surface of said substrate except for a predetermined portion thereof, depositing a polycrystalline silicon layer over said major surface of said substrate, diffusing one conductivity impurity into a first portion of said polycrystalline silicon layer to its entire thickness, covering the surface of said first diffused region except for a peripheral portion thereof with an insulating film, converting said peripheral portion into silicon oxide, diffusing the opposite conductivity type impurity into a second portion of said polycrystalline silicon layer to the depth exceeding the bottom of said second portion to form the opposite conductivity type region in said substrate.
Claim 7
Independent Claim
121 words
A method of manufacturing a semiconductor device comprising the steps of providing a semiconductor substrate, forming an insulating film over the major surface of said substrate except for a predetermined portion thereof, depositing a polycrystalline silicon layer over said major surface of said substrate, diffusing one conductivity impurity into a first portion of said polycrystalline silicon layer to its entire thickness, covering the surface of said first diffused region except for a peripheral portion thereof with an insulating film, converting said peripheral portion into silicon oxide, diffusing the opposite conductivity type impurity into a second portion of said polycrystalline silicon layer to the depth exceeding the bottom of said second portion to form the opposite conductivity type region in said substrate.
Claim 8
Dependent Claim
59 words
The method of claim 5 further comprising the steps of exposing the surface of said first and second diffused regions, depositing a metal over the exposed surfaces, performing a heat treatment at a temperature sufficient for alloying said metal with said polycrystalline silicon layer in said first and second diffused reiongs and removing a non-alloyed portion of said metal.
Claim 9
Independent Claim
130 words
A method of manufacturing a semiconductor device comprising the steps of providing a semiconductor substrate of one conductive type, forming the opposite conductive type region in said substrate, forming an insulating film over a major surface of said substrate except for predetermined portion thereof, depositing a polycrystalline silicon layer over said major surface, selectively diffusing an impurity of said opposite conductive type into a first portion of said polycrystalline layer over to its entire thickness down to the surface of said opposite conductive type region, covering said first portion except for over a peripheral portion thereof with a silicon oxide layer, selectively oxidizing said peripheral portion into an insulator of silicon oxide, and selectively diffusing an impurity of said one conductive type into a second portion of said polycrystalline layer.
Claim 10
Independent Claim
130 words
A method of manufacturing a semiconductor device comprising the steps of providing a semiconductor substrate of one conductive type, forming the opposite conductive type region in said substrate, forming an insulating film over a major surface of said substrate except for predetermined portion thereof, depositing a polycrystalline silicon layer over said major surface, selectively diffusing an impurity of said opposite conductive type into a first portion of said polycrystalline layer over to its entire thickness down to the surface of said opposite conductive type region, covering said first portion except for over a peripheral portion thereof with a silicon oxide layer, selectively oxidizing said peripheral portion into an insulator of silicon oxide, and selectively diffusing an impurity of said one conductive type into a second portion of said polycrystalline layer.
References Cited (Backward Citations)
US3600651A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-12-19 | 1981-06-20 | 1981-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-12-19 | 1985-06-20 | 1985-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-12-19 | 1989-06-20 | 1989-12-20 | $7700.00 | Window Closed / Lapsed |