US4068018A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for preparing a mask for use in manufacturing a semiconductor device
Assignee: NEC Corp
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Filing: 1975-09-15
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Granted: 1978-01-10
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Expires: 1995-09-15
Abstract
Abstract A process is disclosed for preparing a mask, such as a photo-mask, used in a selective etching process in the manufacture of a semiconductor device or a protective mask for use in a process for selectively providing a porous layer of silicon or for anodic oxidation of a metal layer, in which ions accelerated at a predetermined voltage are implanted into a photo-resist film to a predetermined dose level.
Inventors
- 👤 Tadahiro Hashimoto
- 👤 Yasushi Okuyama
- 👤 Toshio Koguchi
- 👤 Koji Wada
- 👤 Mitsuru Sakamoto
- 👤 Takayuki Yanagawa
- 👤 Kyoji Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:22
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/54; G03F1/56; H; H10; H10P; H10P30/00; H10P30/40; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/065; H10P14/00; H10P14/60; H10P14/68; H10P14/683; Y; Y10; Y10S; Y10S430/00; Y10S430/143
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
126 words
A process for preparing a photo- mask comprising the steps of: forming a substantially transparent organic film on a transparent substrate to a thickness of 300A to 10 μm and in a predetermined pattern, said organic film being comprised of at least one material selected from the group consisting of a photo-resist, polymethyl acrylate, rubber, novolak, polyethylene, polyimide, and epoxy, and implanting in said organic film ions accelerated at an acceleration voltage of at least 50 KeV, to a dose level of at least 10 14 /cm 2 to such an extent that said organic film has an optical density that is sufficient to shield visible light and/or ultraviolet rays, thereby providing a photo-mask which selectively shields visible light and/or ultraviolet rays in said predetermined pattern.
Claim 2
Dependent Claim
126 words
A process for preparing a photo- mask comprising the steps of: forming a substantially transparent organic film on a transparent substrate to a thickness of 300A to 10 μm and in a predetermined pattern, said organic film being comprised of at least one material selected from the group consisting of a photo-resist, polymethyl acrylate, rubber, novolak, polyethylene, polyimide, and epoxy, and implanting in said organic film ions accelerated at an acceleration voltage of at least 50 KeV, to a dose level of at least 10 14 /cm 2 to such an extent that said organic film has an optical density that is sufficient to shield visible light and/or ultraviolet rays, thereby providing a photo-mask which selectively shields visible light and/or ultraviolet rays in said predetermined pattern.
Claim 3
Dependent Claim
127 words
A process for preparing a photo-mask for use in photo-etching, comprising the steps of; preparing a transparent substrate through which a visible light and/or ultraviolet rays can be transmitted, depositing a substantially transparent photo-resist film on one plane of said substrate to a thickness of 300 A to 10 μm, selectively removing said photo-resist film to leave a predetermined pattern, and implanting in said remaining photo-resist film ions accelerated at an acceleration voltage of at least 50 KeV, to a dose level of at least 10 14 /cm 2 to such an extent that said photo-resist film has an optical density that is sufficient to shield visible light and/or ultraviolet rays, thereby providing a photo-mask which selectively shields visible light and/or ultraviolet rays in said predetermined pattern.
Claim 4
Dependent Claim
127 words
A process for preparing a photo-mask for use in photo-etching, comprising the steps of; preparing a transparent substrate through which a visible light and/or ultraviolet rays can be transmitted, depositing a substantially transparent photo-resist film on one plane of said substrate to a thickness of 300 A to 10 μm, selectively removing said photo-resist film to leave a predetermined pattern, and implanting in said remaining photo-resist film ions accelerated at an acceleration voltage of at least 50 KeV, to a dose level of at least 10 14 /cm 2 to such an extent that said photo-resist film has an optical density that is sufficient to shield visible light and/or ultraviolet rays, thereby providing a photo-mask which selectively shields visible light and/or ultraviolet rays in said predetermined pattern.
Claim 5
Dependent Claim
145 words
A process for preparing a photo-mask comprising the steps of: forming a first light-shielding pattern on one surface of a transparent substrate, depositing a substantially transparent photo-resist film of a thickness of 300A to 10 μm over the entire surface of said first light-shielding pattern and that portion of said one surface of said transparent substrate on which said first light-shielding pattern is not present, selectively removing said photo-resist film lying on said first light-shielding pattern, implanting in the remaining photo-resist film ions accelerated at an acceleration voltage at least 50 KeV to a dose level of at least 10 14 /cm 2 to convert said remaining photo-resist film to a second light-shielding pattern which is negative with respect to said first light-shielding pattern, and thereafter removing said first light-shielding pattern, whereby a photo-mask having the second light-shielding pattern on the transparent substrate is obtained.
Claim 6
Dependent Claim
145 words
A process for preparing a photo-mask comprising the steps of: forming a first light-shielding pattern on one surface of a transparent substrate, depositing a substantially transparent photo-resist film of a thickness of 300A to 10 μm over the entire surface of said first light-shielding pattern and that portion of said one surface of said transparent substrate on which said first light-shielding pattern is not present, selectively removing said photo-resist film lying on said first light-shielding pattern, implanting in the remaining photo-resist film ions accelerated at an acceleration voltage at least 50 KeV to a dose level of at least 10 14 /cm 2 to convert said remaining photo-resist film to a second light-shielding pattern which is negative with respect to said first light-shielding pattern, and thereafter removing said first light-shielding pattern, whereby a photo-mask having the second light-shielding pattern on the transparent substrate is obtained.
Claim 7
Dependent Claim
95 words
A process for repairing a photo-mask for use in photo-etching, comprising the steps of: selectively forming a substantially transparent photo-resist film of a thickness of 300A to 10μm on a predetermined portion of said photo-mask having a pattern of a light-shielding material on a transparent substrate, and implanting in said photo-resist film ions accelerated at an acceleration voltage of at least 50KeV to a dose level of at least 10 14 /cm 2 to such an extent that said photo-resist film has an optical density that is sufficient to shield visible light and/or ultraviolet rays.
Claim 8
Dependent Claim
95 words
A process for repairing a photo-mask for use in photo-etching, comprising the steps of: selectively forming a substantially transparent photo-resist film of a thickness of 300A to 10μm on a predetermined portion of said photo-mask having a pattern of a light-shielding material on a transparent substrate, and implanting in said photo-resist film ions accelerated at an acceleration voltage of at least 50KeV to a dose level of at least 10 14 /cm 2 to such an extent that said photo-resist film has an optical density that is sufficient to shield visible light and/or ultraviolet rays.
Claim 9
Dependent Claim
72 words
A photo-mask comprising a substrate of a transparent material and a predetermined pattern of an opaque photo-resist film formed on the surface of said substrate, said photo-resist film having been made opaque by having been implanted with ions accelerated at a voltage of at least 50KeV to a dose level of at least 10 14 /cm 2 to such an extent so that said photo-resist film shields visible light and/or ultraviolet rays.
Claim 10
Dependent Claim
72 words
A photo-mask comprising a substrate of a transparent material and a predetermined pattern of an opaque photo-resist film formed on the surface of said substrate, said photo-resist film having been made opaque by having been implanted with ions accelerated at a voltage of at least 50KeV to a dose level of at least 10 14 /cm 2 to such an extent so that said photo-resist film shields visible light and/or ultraviolet rays.
Claim 11
Dependent Claim
144 words
A process for preparing a photo-mask for use in photo-etching comprising the steps of preparing a transparent substrate thorugh which a visible light and/or ultraviolet rays can be transmitted, depositing a substantially transparent organic film on an entire surface of said transparent substrate, said organic film being comprised of at least one material selected from the group consisting of a photo-resist, polymethl acrylate, rubber, novolak, polyethyene, polystyrene, polyimide, and epoxy; implanting in said organic film ions accelerated at an acceleration voltage of at least 50KeV, to a dose level of at least 10 14 /cm 2 to such an extent that said organic film has an optical density sufficient to shield visible light and/or ultraviolet rays, and selectively removing said ion-implanted organic film to leave a predetermined pattern, thereby providing a photomask which selectively shields visible light and/or ultraviolet rays in said predetermined pattern.
Claim 12
Dependent Claim
144 words
A process for preparing a photo-mask for use in photo-etching comprising the steps of preparing a transparent substrate thorugh which a visible light and/or ultraviolet rays can be transmitted, depositing a substantially transparent organic film on an entire surface of said transparent substrate, said organic film being comprised of at least one material selected from the group consisting of a photo-resist, polymethl acrylate, rubber, novolak, polyethyene, polystyrene, polyimide, and epoxy; implanting in said organic film ions accelerated at an acceleration voltage of at least 50KeV, to a dose level of at least 10 14 /cm 2 to such an extent that said organic film has an optical density sufficient to shield visible light and/or ultraviolet rays, and selectively removing said ion-implanted organic film to leave a predetermined pattern, thereby providing a photomask which selectively shields visible light and/or ultraviolet rays in said predetermined pattern.
Claim 13
Dependent Claim
29 words
A process according to claim 6 wherein said step of selectively removing said ion-implanted organic film includes selectively etching said ion-implanted organic film by plasma etching or sputtering etching.
Claim 14
Dependent Claim
117 words
A process for preparing a photo-mask for use in photo-etching comprising the steps of preparing a transparent substrate through which a visible light and/or ultraviolet rays can be transmitted, depositing a substantially transparent photo-resist film on an entire surface of said transparent substrate, implanting in said photo-resist film ions accelerated at an acceleration voltage of at least 50KeV, to a dose level of at least 10 14 /cm 2 to such an extent that said photo-resist film has an optical density sufficient to shield visible light and/or ultraviolet rays, and selectively removing said ion-implanted photo-resist film to leave a predetermined pattern, thereby providing a photo-mask which selectively shields visible light and/or ultraviolet rays in said predetermined pattern.
Claim 15
Dependent Claim
117 words
A process for preparing a photo-mask for use in photo-etching comprising the steps of preparing a transparent substrate through which a visible light and/or ultraviolet rays can be transmitted, depositing a substantially transparent photo-resist film on an entire surface of said transparent substrate, implanting in said photo-resist film ions accelerated at an acceleration voltage of at least 50KeV, to a dose level of at least 10 14 /cm 2 to such an extent that said photo-resist film has an optical density sufficient to shield visible light and/or ultraviolet rays, and selectively removing said ion-implanted photo-resist film to leave a predetermined pattern, thereby providing a photo-mask which selectively shields visible light and/or ultraviolet rays in said predetermined pattern.
Claim 16
Dependent Claim
29 words
A process according to claim 8, wherein said step of selectively removing said ion-implanted photo-resist film includes selectively etching said ion-implanted photo-resist film by plasma etching or sputtering etching.
References Cited (Backward Citations)
US3467523A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-01-09 | 1981-07-11 | 1982-01-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-01-09 | 1985-07-11 | 1986-01-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-01-09 | 1989-07-11 | 1990-01-10 | $7700.00 | Window Closed / Lapsed |