US4074303A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor rectifier device
Assignee: Siemens AG
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Filing: 1976-01-20
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Granted: 1978-02-14
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Expires: 1996-01-20
Abstract
Abstract A semiconductor rectifier device including an inner layer of semiconductor material of a first conductivity type and an outer layer of first conductivity type but having a higher doping concentration than the inner layer with the outer layer formed with a plurality of islands of opposite conductivity type which do not extend completely through the outer layer so as to provide a semiconductor rectifier device which has greatly improved resistance to high voltage breakdown particularly in the reverse direction.
Inventors
- 👤 Hansjochen Benda
- 👤 Peter Huber
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:56
CPC Classifications
H; H10; H10D; H10D8/00; Y; Y10; Y10S; Y10S257/00; Y10S257/914
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
166 words
A semiconductor diode comprising an interior zone, a first exterior zone connected to the interior zone on one side and has the same conductivity type as said interior zone, said first exterior zone having a higher doping concentration than said interior zone, and with at least a second exterior zone connected to the other side of said interior zone, said second exterior zone being of opposite conductivity type of said interior zone, a first electrode mounted on said first exterior zone, a second electrode mounted on said second exterior zone, areas of opposite conductivity type formed in said first exterior zone and distributed across its surface, said areas having depths which are less than the depth of said first exterior zone, and said first electrode covering and in contact with said areas and said first exterior zone and said areas of opposite conductivity type having a doping concentration which is less than that of said first exterior zone and greater than that of said interior zone.
Claim 2
Dependent Claim
166 words
A semiconductor diode comprising an interior zone, a first exterior zone connected to the interior zone on one side and has the same conductivity type as said interior zone, said first exterior zone having a higher doping concentration than said interior zone, and with at least a second exterior zone connected to the other side of said interior zone, said second exterior zone being of opposite conductivity type of said interior zone, a first electrode mounted on said first exterior zone, a second electrode mounted on said second exterior zone, areas of opposite conductivity type formed in said first exterior zone and distributed across its surface, said areas having depths which are less than the depth of said first exterior zone, and said first electrode covering and in contact with said areas and said first exterior zone and said areas of opposite conductivity type having a doping concentration which is less than that of said first exterior zone and greater than that of said interior zone.
Claim 3
Dependent Claim
14 words
A semiconductor diode according to claim 1 wherein said areas form a symmetrical pattern.
Claim 4
Dependent Claim
25 words
A semiconductor diode according to claim 2 wherein said areas do not comprise more than 10% of the total surface of said first exterior zone.
References Cited (Backward Citations)
US2971139A
Cited
US3249831A
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US3331000A
Cited
US3476992A
Cited
US3599061A
Cited
US3914782A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-02-13 | 1981-08-15 | 1982-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-02-13 | 1985-08-15 | 1986-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-02-13 | 1989-08-15 | 1990-02-14 | $7700.00 | Window Closed / Lapsed |