US4077819A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Technique for passivating semiconductor devices
Assignee: Individual
•
Filing: 1976-09-09
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Granted: 1978-03-07
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Expires: 1996-09-09
Abstract
Abstract The specification discloses a technique for passivating a semiconductor device which includes exposing a P-N junction in a multilayered semiconductor body. A mixture of glass and gold is prepared and applied to the exposed P-N junction. A mixture is fired to fuse the glass and gold on the semiconductor body. The carrier lifetime degrading characteristics of the gold reduces the current leakage at the exposed P-N junction. The technique substantially improves the voltage capacity and stability of semiconductor switching devices.
Inventors
- 👤 Jearld L. Hutson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:49
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10P32/18; H10P32/19; H10W; H10W74/00; H10W74/01; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S438/00; Y10S438/904; Y10S438/958
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
75 words
The method of passivating a silicon semiconductor device comprising: exposing a P-N junction in a multilayered silicon semiconductor body, forming a mixture of glass and a quantity of carrier lifetime degrading material selected from a group comprising gold and platinum, applying the mixture to the exposed P-N junction, and firing the mixture to fuse the glass and material on the silicon semiconductor body to enhance the voltage capacity and stability of the exposed P-N junction.
Claim 2
Independent Claim
75 words
The method of passivating a silicon semiconductor device comprising: exposing a P-N junction in a multilayered silicon semiconductor body, forming a mixture of glass and a quantity of carrier lifetime degrading material selected from a group comprising gold and platinum, applying the mixture to the exposed P-N junction, and firing the mixture to fuse the glass and material on the silicon semiconductor body to enhance the voltage capacity and stability of the exposed P-N junction.
Claim 3
Dependent Claim
26 words
The method of claim 1 wherein the quantity of gold provides a gold concentration of from about 10 16 to 10 23 atoms per cubic centimeter.
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein said mixture comprises lead oxide, silicon dioxide, gold oxide and aluminum oxide.
Claim 5
Dependent Claim
18 words
The method of claim 1 wherein said mixture comprises zinc oxide, silicon dioxide, gold oxide and boron oxide.
Claim 6
Dependent Claim
36 words
The method of claim 1 wherein said mixture comprises: about 40% to about 60% lead oxide, about 30% to about 50% silicon dioxide, up to about 20% aluminum oxide, and at least about 0.001% gold oxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-03-06 | 1981-09-05 | 1982-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-03-06 | 1985-09-05 | 1986-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-03-06 | 1989-09-05 | 1990-03-07 | $7700.00 | Window Closed / Lapsed |