US4101924A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor radiation detector
Assignee: General Electric Co
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Filing: 1977-06-16
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Granted: 1978-07-18
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Expires: 1997-06-16
Abstract
Abstract A structure is described in which a large area depletion region is provided in a semiconductor substrate of one conductivity type for the conversion of photons into charge and in which a small area region of opposite conductivity type is provided in the substrate for read out of the collected charge.
Inventors
- 👤 Dale M. Brown
- 👤 Marvin Garfinkel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 09:31
CPC Classifications
G; G01; G01T; G01T1/00; G01T1/16; G01T1/20; G01T1/2006; H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/2823; H10F77/00; H10F77/40; H10F77/496
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
119 words
A radiation sensing device comprising a substrate of monocrystalline semiconductor material of one conductivity type, a first layer of a transparent insulating material overlying a major surface of said substrate, a second layer of a transparent conductive material overlying said first layer and forming a first capacitor with said substrate and said first layer, a region of opposite conductivity type in said substrate adjacent said major surface forming a PN junction therewith, said PN junction having a first edge in said major surface and underlying said second layer of transparent conductive material, the area of said region of opposite conductivity type in said major surface being substantially smaller than the area of said second layer of transparent conductive material.
Claim 2
Dependent Claim
119 words
A radiation sensing device comprising a substrate of monocrystalline semiconductor material of one conductivity type, a first layer of a transparent insulating material overlying a major surface of said substrate, a second layer of a transparent conductive material overlying said first layer and forming a first capacitor with said substrate and said first layer, a region of opposite conductivity type in said substrate adjacent said major surface forming a PN junction therewith, said PN junction having a first edge in said major surface and underlying said second layer of transparent conductive material, the area of said region of opposite conductivity type in said major surface being substantially smaller than the area of said second layer of transparent conductive material.
Claim 3
Dependent Claim
46 words
The device of claim 1 in which both said second layer and said region of opposite conductivity type are of elongated configurations and in which said first edge of said PN junction is substantially linear and substantially parallel to the longitudinal axis of said second layer.
Claim 4
Dependent Claim
70 words
The device of claim 2 in which a third layer of a transparent conductive material and of elongated configuration overlies said first layer and forms a second capacitor with said substrate and said first layer, in which said PN junction has a second substantially linear edge, said second linear edge underlying said third layer of transparent conductive material and being substantially parallel to the longitudinal axis of said third layer.
Claim 5
Dependent Claim
80 words
The device of claim 1 in which is provided means for biasing said second layer with respect to said substrate to establish a minority carrier charge collection region therein and in which is provided means for reversely biasing said region of opposite conductivity type with respect to said substrate, the absolute value of the potential of said region of opposite conductivity type being greater than the absolute value of the surface potential of said major surface underlying said second layer.
Claim 6
Dependent Claim
12 words
The device of claim 1 in which said semiconductor material is silicon.
Claim 7
Dependent Claim
27 words
The device of claim 1 in which said transparent conductive material is selected from the class consisting of tin oxide, indium tin oxide, and antimony tin oxide.
Claim 8
Dependent Claim
18 words
The device of claim 1 in which said second layer is a thin transparent layer of a metal.
References Cited (Backward Citations)
US3418473A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-07-17 | 1982-01-16 | 1982-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-07-17 | 1986-01-16 | 1986-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-07-17 | 1990-01-16 | 1990-07-18 | $7700.00 | Window Closed / Lapsed |