Process for the production of epitaxial layers on monocrystalline substrates by liquid-phase-slide epitaxy

Claim 1

In a method for the production of epitaxial layers on monocrystalline substrates by a liquid-phase-slide epitaxy process, said method including providing a monocrystalline substrate having a surface, shifting a slide in one direction to move a melt onto said surface, depositing a monocrystalline, epitaxial layer of material from the melt onto the surface of the substrate, and subsequently moving the slide in said one direction to remove the remaining portion of the melt from the substrate and layer deposited thereon, the improvement comprising the step of providing a substrate provides a crystal having a surface with at least two boundary edges which are parallel to one another and in which no preferred edge growth occurs in a direction N 1 , N 1 ' running at right angles to the boundary edges, and pointing outward from the interior of the substrate crystal, and wherein the step of moving the slide moves the slide in a direction relative to the boundary edges so that the melt moves across said boundary edges as it is being applied to and removed from the surface of the crystal.