Production of semiconductor devices

Claim 1

A method of electrically interconnecting conductors formed by first and second metal layers respectively on opposing faces of a polyimide substrate by a third electrically conductive layer within a bore extending through the substrate at a desired position, including the steps of: (a) forming a hole in the first and second layers to expose underlying areas of the substrate, the holes in the said layers corresponding and being positioned opposite to one another at said desired position of the bore; (b) applying simultaneously to both faces an etchant to act upon the said underlying areas of substrate to etch out the desired bore, the position of which is defined by the masking action of the remaining part of the first and second layers, but the effect of the etchant being such as to remove more substrate material adjacent to said layers than in the central part of the bore so as to produce an overhanging region of each such layer around the bore; (c) then etching away further portions of the first and second layers to an extent sufficient to remove all of said overhanging regions and to expose the faces of the substrate immediately adjacent to the ends of the bore; (d) and thereafter depositing the third conductive metal layer in the bore to form an electrically conductive connection between the first and second layers.

Claim 2

A method of electrically interconnecting conductors formed by first and second metal layers respectively on opposing faces of a polyimide substrate by a third electrically conductive layer within a bore extending through the substrate at a desired position, including the steps of: (a) forming a hole in the first and second layers to expose underlying areas of the substrate, the holes in the said layers corresponding and being positioned opposite to one another at said desired position of the bore; (b) applying simultaneously to both faces an etchant to act upon the said underlying areas of substrate to etch out the desired bore, the position of which is defined by the masking action of the remaining part of the first and second layers, but the effect of the etchant being such as to remove more substrate material adjacent to said layers than in the central part of the bore so as to produce an overhanging region of each such layer around the bore; (c) then etching away further portions of the first and second layers to an extent sufficient to remove all of said overhanging regions and to expose the faces of the substrate immediately adjacent to the ends of the bore; (d) and thereafter depositing the third conductive metal layer in the bore to form an electrically conductive connection between the first and second layers.