Patent US4123295A successfully refreshed from Google Patents.
US4123295A
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Mercury chalcogenide contact for semiconductor devices
Assignee: California Institute of Technology
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Filing: 1977-01-14
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Granted: 1978-10-31
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Expires: 1997-01-14
Abstract
Abstract An improved contact material for use in the fabrication of semiconductor devices is provided. This material comprises one of the mercury chalcogenides. The application of this material to a nondegenerate semiconductor may be made by the process of evaporation. The resulting contact is stable in the atmosphere, and is more electronegative than the best contact material, namely gold, that is now used.
Inventors
- 👤 James O. McCaldin
- 👤 John S. Best
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:48
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/86; H10D64/00; H10D64/01; H10D64/011
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
58 words
In combination with a semiconductor, an improved contact made by stoichiometric deposition of one of the mercury chalcogenides selected from the group consisting of the binary compounds HgSe, HgTe, and β-HgS, or solid solutions of these binary compounds on a semiconductor body to form an abrupt interface and energy gap change between the contact and the semiconductor body.
Claim 2
Dependent Claim
58 words
In combination with a semiconductor, an improved contact made by stoichiometric deposition of one of the mercury chalcogenides selected from the group consisting of the binary compounds HgSe, HgTe, and β-HgS, or solid solutions of these binary compounds on a semiconductor body to form an abrupt interface and energy gap change between the contact and the semiconductor body.
Claim 3
Dependent Claim
60 words
An improved ohmic contact material for a p-type semiconductor body comprised of one of the mercury chalcogenide materials selected from the group consisting of HgSe, HgTe, and β-HgS, or solid solutions of these compounds, stoichiometrically deposited on the surface of said p-type semiconductor to form an abrupt interface and energy gap change between the contact material and the semiconductor body.
Claim 4
Dependent Claim
60 words
An improved ohmic contact material for a p-type semiconductor body comprised of one of the mercury chalcogenide materials selected from the group consisting of HgSe, HgTe, and β-HgS, or solid solutions of these compounds, stoichiometrically deposited on the surface of said p-type semiconductor to form an abrupt interface and energy gap change between the contact material and the semiconductor body.
Claim 5
Dependent Claim
57 words
A contact material for producing high Schottky barrier energies on an n-type semiconductor body comprised of one of the mercury chalcogenide materials selected from the group consisting of HgSe, HgTe, and β-HgS, or solid solutions of these compounds stoichiometrically deposited to form an abrupt interface and energy gap change between the contact material and the semiconductor body.
Claim 6
Dependent Claim
57 words
A contact material for producing high Schottky barrier energies on an n-type semiconductor body comprised of one of the mercury chalcogenide materials selected from the group consisting of HgSe, HgTe, and β-HgS, or solid solutions of these compounds stoichiometrically deposited to form an abrupt interface and energy gap change between the contact material and the semiconductor body.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-10-30 | 1982-05-01 | 1982-10-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-10-30 | 1986-05-01 | 1986-10-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-10-30 | 1990-05-01 | 1990-10-31 | $7700.00 | Window Closed / Lapsed |