Radiation hardened solar cell

Claim 1

A method of using a radiation hardened solar cell in an extraterrestrial application comprising the steps of forming a plurality of V-grooves on the front surface of a semiconductor substrate of a first conductivity type, forming a thin layer of a second, opposite conductivity type layer thereupon to form a junction having the same topography as the front surface of the solar cell, highly doping the planar back surface of the solar cell to satisfy the conditions of s<<D/L, where s is the surface recombination velocity at the back surface, and D and L are the diffusion coefficient and the diffusion length, respectively, of minor carriers in the substrate, selecting the thickness of the solar cell optimized power output throughout a given design lifetime of said extraterrestrial application when said cell is subjected to extraterrestrial radiation such that the thickness of said cell measured from the planar back surface to the peaks of the V-grooves is approximately equal to the diffusion length L of minority carriers at the beginning of the design lifetime and the thickness of the solar cell measured from the planar back surface to the valleys of the V-grooves is approximately equal to the diffusion length L of minority carriers at the end of the design lifetime, and exposing said cell to extraterrestrial radiation.

Claim 2

A method of using a radiation hardened solar cell in an extraterrestrial application comprising the steps of forming a plurality of V-grooves on the front surface of a semiconductor substrate of a first conductivity type, forming a thin layer of a second, opposite conductivity type layer thereupon to form a junction having the same topography as the front surface of the solar cell, highly doping the planar back surface of the solar cell to satisfy the conditions of s<<D/L, where s is the surface recombination velocity at the back surface, and D and L are the diffusion coefficient and the diffusion length, respectively, of minor carriers in the substrate, selecting the thickness of the solar cell optimized power output throughout a given design lifetime of said extraterrestrial application when said cell is subjected to extraterrestrial radiation such that the thickness of said cell measured from the planar back surface to the peaks of the V-grooves is approximately equal to the diffusion length L of minority carriers at the beginning of the design lifetime and the thickness of the solar cell measured from the planar back surface to the valleys of the V-grooves is approximately equal to the diffusion length L of minority carriers at the end of the design lifetime, and exposing said cell to extraterrestrial radiation.

Claim 7

A method of using a radiation hardened solar cell in an extraterrestrial application for optimizing power output throughout a given design lifetime in said extraterrestrial application comprising the steps of: slicing a single crystal silicon substrate of a first conducitivity type along the <100> plane to a thickness approximately equal to the diffusion length at beginning of said design lifetime for electrons in the silicon substrate, forming a mask comprising a plurality of spaced apart silicon dioxide stripes on the substrate exhibiting the <100> surface, treating the masked <100> surface with a preferential etching solution and allowing the etching to continue until self-stopping to form V-grooves between the silicon dioxide stripes with an angle of 70° and a depth to width ratio of 0.7, the resulting thickness measured from the back surface of the substrate to the valleys of the V-grooves selected to be approximately equal to the diffusion length of electrons in the silicon substrate at the end of design lifetime, thereafter diffusing a thin layer of a second, opposite conductivity type in the etched <100> surface to form a junction, and exposing said cell to extraterrestrial radiation.

Claim 8

A method of using a radiation hardened solar cell in an extraterrestrial application for optimizing power output throughout a given design lifetime in said extraterrestrial application comprising the steps of: slicing a single crystal silicon substrate of a first conducitivity type along the <100> plane to a thickness approximately equal to the diffusion length at beginning of said design lifetime for electrons in the silicon substrate, forming a mask comprising a plurality of spaced apart silicon dioxide stripes on the substrate exhibiting the <100> surface, treating the masked <100> surface with a preferential etching solution and allowing the etching to continue until self-stopping to form V-grooves between the silicon dioxide stripes with an angle of 70° and a depth to width ratio of 0.7, the resulting thickness measured from the back surface of the substrate to the valleys of the V-grooves selected to be approximately equal to the diffusion length of electrons in the silicon substrate at the end of design lifetime, thereafter diffusing a thin layer of a second, opposite conductivity type in the etched <100> surface to form a junction, and exposing said cell to extraterrestrial radiation.