US4151420A
Expired / Lapsed
US
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Apparatus for the formation of epitaxial layers doped with conductivity-determining impurities by ion deposition
Assignee: International Business Machines Corp
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Filing: 1977-12-08
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Granted: 1979-04-24
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Expires: 1997-12-08
Abstract
Abstract An apparatus for depositing a monocrystalline epitaxial layer of semiconductor material, e.g., silicon containing selected conductivity-determining impurities, on a semiconductor substrate comprising directing a beam of ions of said semiconductor material at the surface of the semiconductor substrate at an energy level below 0.5 Kev., and simultaneously directing a beam of the conductivity-determining impurity ions at at least a portion of the substrate surface whereby a layer of semiconductor material containing said conductivity-determining impurities is formed on said surface, and heating said layer to a temperature of at least 550° C. to render said layer monocrystalline. The beams of semiconductor ions and of conductivity-determining impurity ions are preferably maintained at a high current density of at least 1 ma/cm 2 at the surface of said semiconductor substrate even with a preferable relatively broad beam having diameters of up to 15 cm. Such wide beams are desirably achieved by ion beam apparatus having a high intensity source with a multi-aperture source exit plate.
Inventors
- 👤 John H. Keller
- 👤 Charles M. McKenna
- 👤 James R. Winnard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:23
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B23/04; C30B23/08; H; H01; H01J; H01J37/00; H01J37/30; H01J37/3002; H01J37/3007; H01J37/317; H01J37/3171; H01J37/3178; H10; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
124 words
In equipment for applying a beam of selected ions to a substrate, apparatus for applying a thin layer of semiconductor material containing selected conductivity-determining impurities onto said target comprising mass separating means, a source of said semiconductor ions having a multi-apertured exit plate, means for extracting said semiconductor ions through said exit plate and directing said extracted ions into said mass separating means, means for simultaneously directing a beam of said selected conductivity-determining impurities into said mass separating means, said mass separating means being adapted to provide a beam of ions of said semiconductor material directed at a surface of said target and to simultaneously provide a beam of ions of said conductivity-determining impurities directed at at least a portion of said target surface.
Claim 2
Dependent Claim
124 words
In equipment for applying a beam of selected ions to a substrate, apparatus for applying a thin layer of semiconductor material containing selected conductivity-determining impurities onto said target comprising mass separating means, a source of said semiconductor ions having a multi-apertured exit plate, means for extracting said semiconductor ions through said exit plate and directing said extracted ions into said mass separating means, means for simultaneously directing a beam of said selected conductivity-determining impurities into said mass separating means, said mass separating means being adapted to provide a beam of ions of said semiconductor material directed at a surface of said target and to simultaneously provide a beam of ions of said conductivity-determining impurities directed at at least a portion of said target surface.
Claim 3
Dependent Claim
25 words
The ion beam apparatus of claim 1 further including means for maintaining the voltage level of the beams applied to said substrate below 0.5 Kev.
Claim 4
Dependent Claim
14 words
The apparatus of claim 2 wherein said voltage maintaining means include beam retarding means.
Claim 5
Dependent Claim
27 words
The apparatus of claim 3 further including means for maintaining said beams at a combined high current density of at least 1 ma/cm 2 at the target.
Claim 6
Dependent Claim
19 words
The apparatus of claim 4 wherein said beam of semiconductor ions has a diameter of up to 15 cm.
Claim 7
Dependent Claim
25 words
The apparatus of claim 3 wherein said mass separating means include discrete mass separators respectively receiving said semiconductor ion beam and said conductivity-determining impurity beam.
Claim 8
Dependent Claim
32 words
The apparatus of claim 6 further including focusing means between said semiconductor ion source and said semiconductor beam mass separator for narrowing the beam of semiconductor ions directed into said mass separator.
Claim 9
Dependent Claim
36 words
The apparatus of claim 7 wherein said mass separator is further adapted to narrow the dimensions of the semiconductor beam provided by said mass separator from the dimensions of said silicon beam directed into said separator.
Claim 10
Dependent Claim
47 words
The apparatus of claim 8 wherein said means for directing said beam of conductivity-determining impurity ions include a source of said impurity ions having a multi-apertured exit plate and means for extracting said conductivity-determining impurity ions through said plate in the direction of said mass separating means.
Claim 11
Dependent Claim
33 words
The apparatus of claim 9 further including focusing means between said conductivity-determining impurity ion source and said impurity mass separator for narrowing the beam of conductivity-determining impurity ions directed into said mass separator.
Claim 12
Dependent Claim
130 words
In equipment for applying a beam of selected ions to a substrate, apparatus for applying a thin layer of semiconductor material containing selected conductivity-determining impurities onto said target comprising a mass separator including an analyzing magnet; means for directing a beam of silicon ions into said mass separator, and means for simultaneously directing a beam of ions of said selected conductivity-determining impurities into said mass separator, said mass separator being adapted to provide said silicon ions and said conductivity-determining impurity ions with coaxial trajectories along a selected beam axis, said substrate being positioned along said axis, whereby a coaxial beam of said silicon and said conductivity-determining impurity ions is applied to said substrate; and means for maintaining the voltage level of the beam applied to said substrate below 0.5 Kev.
Claim 13
Dependent Claim
130 words
In equipment for applying a beam of selected ions to a substrate, apparatus for applying a thin layer of semiconductor material containing selected conductivity-determining impurities onto said target comprising a mass separator including an analyzing magnet; means for directing a beam of silicon ions into said mass separator, and means for simultaneously directing a beam of ions of said selected conductivity-determining impurities into said mass separator, said mass separator being adapted to provide said silicon ions and said conductivity-determining impurity ions with coaxial trajectories along a selected beam axis, said substrate being positioned along said axis, whereby a coaxial beam of said silicon and said conductivity-determining impurity ions is applied to said substrate; and means for maintaining the voltage level of the beam applied to said substrate below 0.5 Kev.
Claim 14
Dependent Claim
21 words
The apparatus of claim 11 wherein said voltage maintaining means include beam retarding means along the beam axis near the substrate.
Claim 15
Dependent Claim
27 words
The apparatus of claim 12 further including means for maintaining said combined beams at a high current density of at least 1 ma/cm 2 at the target.
Claim 16
Dependent Claim
19 words
The apparatus of claim 11 wherein said beam of semiconductor ions has a diameter of up to 15 cm.
Claim 17
Dependent Claim
44 words
The apparatus of claim 14 wherein said means for directing said beam of semiconductor ions include a source for said semiconductor ions having a multi-apertured exit plate and means for extracting said semiconductor ions through said plate in the direction of said analyzing magnet.
Claim 18
Dependent Claim
30 words
The apparatus of claim 15 further including focusing means between said semiconductor ion source and said analyzing magnet for narrowing the beam of semiconductor ions directed into said analyzing magnet.
Claim 19
Dependent Claim
46 words
The apparatus of claim 16 wherein said means for directing said beam of conductivity-determining impurity ions include a source of said impurity ions having a multi-apertured exit plate and means for extracting said conductivity-determining impurity ions through said plate in the direction of said analyzing magnet.
Claim 20
Dependent Claim
32 words
The apparatus of claim 17 further including focusing means between said conductivity-determining impurity ion source and said analyzing magnet for narrowing the beam of conductivity-determining impurity ions directed into said analyzing magnet.
References Cited (Backward Citations)
US3434894A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-23 | 1982-10-23 | 1983-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-23 | 1986-10-23 | 1987-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-23 | 1990-10-23 | 1991-04-24 | $7700.00 | Window Closed / Lapsed |