US4151502A
Expired / Lapsed
US
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Semiconductor transducer
Assignee: Hitachi Ltd
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Filing: 1977-04-15
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Granted: 1979-04-24
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Expires: 1997-04-15
Abstract
Abstract A semiconductor transducer comprises a semiconductor strain gauge composed of a mono-crystalline semiconducting material and a strain sensing region formed in a first main surface of the mono-crystalline semiconducting material, and a strain measuring member coupled to the semiconductor strain gauge through an alloy material. An electrical insulating layer is attached to a second main surface of the mono-crystalline semiconducting material which is coupled to the strain measuring member through the alloy material. The insulating layer is extended to a side surface of the mono-crystalline semiconducting material thereby to cover the same side.
Inventors
- 👤 Yasutoshi Kurihara
- 👤 Tetuo Kosugi
- 👤 Teruyuki Kagami
- 👤 Satoshi Shimada
- 👤 Yasumasa Matsuda
- 👤 Kazuji Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 08:07
CPC Classifications
G; G01; G01L; G01L1/00; G01L1/20; G01L1/22; G01L1/2287; G01L1/2293; G01L9/00; G01L9/0001; G01L9/0002; H; H10; H10D; H10D48/00; H10D48/50; Y; Y10; Y10S; Y10S73/00; Y10S73/04; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49103
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
218 words
A semiconductor transducer comprising: a semiconductor strain gauge composed of a monocrystalline semiconducting material portion having a first main surface, a second main surface and a side surface, and a strain sensing region formed in said first main surface of said monocrystalline semiconducting material portion; an electrical insulating layer covering said second main surface and said side surface of said mono-crystalline semiconducting material portion; a strain measuring member at which strain to be sensed is caused; and an alloy material interposed between said strain measuring member and that part of said electrical insulating layer which covers said second main surface of said mono-crystalline semiconducting material portion, for coupling said strain measuring member to said second main surface through said insulating layer, wherein said electrical insulating layer is a very thin layer having a thickness of only several μm and is made of one material selected from a group consisting of silicon dioxide, alumina, silicon nitride, germanium dioxide, gallium arsenide doped with a selected one of chromium, iron and oxygen and gallium phosphide doped with a selected one of chromium, iron and oxygen, and wherein said alloy material is one selected from a group consisting of a gold-germanium group alloy and a gold-silicon group alloy and is continuously disposed between said electrical insulating layer and said strain measuring member.
Claim 2
Dependent Claim
218 words
A semiconductor transducer comprising: a semiconductor strain gauge composed of a monocrystalline semiconducting material portion having a first main surface, a second main surface and a side surface, and a strain sensing region formed in said first main surface of said monocrystalline semiconducting material portion; an electrical insulating layer covering said second main surface and said side surface of said mono-crystalline semiconducting material portion; a strain measuring member at which strain to be sensed is caused; and an alloy material interposed between said strain measuring member and that part of said electrical insulating layer which covers said second main surface of said mono-crystalline semiconducting material portion, for coupling said strain measuring member to said second main surface through said insulating layer, wherein said electrical insulating layer is a very thin layer having a thickness of only several μm and is made of one material selected from a group consisting of silicon dioxide, alumina, silicon nitride, germanium dioxide, gallium arsenide doped with a selected one of chromium, iron and oxygen and gallium phosphide doped with a selected one of chromium, iron and oxygen, and wherein said alloy material is one selected from a group consisting of a gold-germanium group alloy and a gold-silicon group alloy and is continuously disposed between said electrical insulating layer and said strain measuring member.
Claim 3
Dependent Claim
50 words
A semiconductor transducer according to claim 1, in which said insulating layer not only covers both of said second main surface and said side surface completely but extend to said first main surface to cover a part of said first main surface which is free from said strain sensing region.
Claim 4
Dependent Claim
56 words
A semiconductor transducer according to claim 2, in which said mono-crystalline semiconducting material portion is made of a material of one conduction type and said strain sensing region is formed by diffusion of a material of the opposite conduction type, thereby isolating said mono-crystalline semiconducting material portion from said strain sensing region by a PN junction.
Claim 5
Dependent Claim
91 words
A semiconductor transducer according to claim 3, in which said mono-crystalline semiconducting material portion is made of a silicon mono-crystal of P conduction type, said mono-crystalline semiconducting material portion having said first main surface formed with an N-type strain sensing region by diffusion of boron; and in which said strain measuring member is made of one material selected from a group of single substances consisting of iron, nickel, cobalt, molybdenum, tungsten and titanium and a group of alloys made of at least two materials selected from said group of single substances.
Claim 6
Dependent Claim
142 words
A semiconductor transducer according to claim 3, in which said mono-crystalline semiconducting material portion is made of a silicon mono-crystal of P conduction type, said mono-crystalline semiconducting material portion having said first main surface formed with an N-type strain sensing region by diffusion of boron; in which said insulating layer includes a laminated layer structure of at least two materials selected from a group consisting of silicon dioxide, alumina, silicon nitride, germanium dioxide, gallium arsenide doped with selected one of chromium, iron and oxygen, and gallium phosphide doped with selected one of chromium, iron and oxygen; and in which said strain measuring member is made of one material selected from a group of single substances consisting of iron, nickel, cobalt, molybdenum, tungsten and titanium, and a group of alloys made of at least two materials selected from said group of single substances.
Claim 7
Dependent Claim
98 words
A semiconductor transducer according to claim 3, in which said mono-crystalline semiconducting material portion is made of selected one of a silicon mono-crystal and germanium mono-crystal of N conduction type, said mono-crystalline semiconducting material portion having the first main surface thereof formed with a P-type strain sensing region by diffusion of gallium; and in which said strain measuring member is made of one material selected from a group of single substances consisting of iron, nickel, cobalt, molybdenum, tungsten and titanium and a group of alloys made of at least two materials selected from said group of single substances.
Claim 8
Dependent Claim
144 words
A semiconductor transducer according to claim 3, in which said mono-crystalline semiconducting material portion is made of selected one of a silicon mono-crystal of N conduction type, said mono-crystalline semiconducting material portion having the first main surface thereof formed with a P-type strain sensing region by diffusion of gallium; in which said insulating layer includes a laminated layer structure of at least two materials selected from a group of silicon dioxide, alumina, silicon nitride, germanium dioxide, gallium arsenide doped with selected one of chromium, iron and oxygen, and gallium phosphide doped with selected one of chromium, iron and oxygen; and in which said strain measuring member is made of one material selected from a group of single substances consisting of iron, nickel, cobalt, molybdenum, tungsten and titanium, and group of alloys made of at least two materials selected from said group of single substances.
Claim 9
Dependent Claim
52 words
A semiconductor transducer according to claim 3, in which said mono-crystalline semiconducting material portion is made of a selected one of a silicon mono-crystal and germanium mono-crystal of P conduction type, said mono-crystalline semiconducting material portion having the first main surface formed with a N-type strain sensing region by diffusion of phosphorus.
Claim 10
Dependent Claim
16 words
A semiconductor transducer according to claim 1, in which said strain measuring member is a cantilever.
Claim 11
Dependent Claim
33 words
A semiconductor transducer according to claim 9, in which said cantilever has flat surfaces and said semiconductor strain gauge is coupled to said cantilever at a portion of one of said flat surfaces.
Claim 12
Dependent Claim
48 words
A semiconductor transducer according to claim 9, in which recesses are formed at portions of surfaces of said cantilever to concentrate strain thereto when force is applied to a portion of said cantilever and said semiconductor strain gauge is coupled to said cantilever across one of said recesses.
Claim 13
Dependent Claim
19 words
A semiconductor transducer according to claim 1, wherein the electrical insulating layer is 1 μm or less in thickness.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-23 | 1982-10-23 | 1983-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-23 | 1986-10-23 | 1987-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-23 | 1990-10-23 | 1991-04-24 | $7700.00 | Window Closed / Lapsed |