US4158577A
Expired / Lapsed
US
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High output solar cells
Assignee: Individual
•
Filing: 1978-07-05
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Granted: 1979-06-19
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Expires: 1998-07-05
Abstract
Abstract A high output solar cell comprises a three-layer semiconductor compound article, the layers being doped in pn 1 n 2 order in the direction of light travel, the pn 1 junction being a homojunction and the n 1 n 2 junction being a heterojunction. The doping of the layers is such that "valley-tranferred" or "hot" electrons, so-called, are created in th p and n region secondary electron conduction bands and are transferred to the normal conduction band edge of the n 2 heterojunction material and ultimately to an ohmic contact.
Inventors
- 👤 Arthur G. Milnes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:05
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/19; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
140 words
A multiple layer high output solar cell comprising superimposed layers in pn 1 n 2 form of semiconductor compounds selected from the group consisting of group III-V compound semiconductors and their group II-V-V 2 analogs, the pn 1 junction being a homojunction of a compound having a primary electron conduction band of minimum bandgap energy and at least one secondary electron conduction band of higher bandgap energy, the p layer being doped so as to create a field therein sufficient to divert "hot" photo-induced electrons from the primary into the secondary electron conduction band of the n 1 layer and the n 2 layer being adjusted in composition so that its conduction band energy minima are approximately equal to the secondary electron conduction band energy, whereby "hot" electrons in the secondary electron conduction band pass into the n 2 layer.
Claim 2
Dependent Claim
140 words
A multiple layer high output solar cell comprising superimposed layers in pn 1 n 2 form of semiconductor compounds selected from the group consisting of group III-V compound semiconductors and their group II-V-V 2 analogs, the pn 1 junction being a homojunction of a compound having a primary electron conduction band of minimum bandgap energy and at least one secondary electron conduction band of higher bandgap energy, the p layer being doped so as to create a field therein sufficient to divert "hot" photo-induced electrons from the primary into the secondary electron conduction band of the n 1 layer and the n 2 layer being adjusted in composition so that its conduction band energy minima are approximately equal to the secondary electron conduction band energy, whereby "hot" electrons in the secondary electron conduction band pass into the n 2 layer.
Claim 3
Dependent Claim
23 words
The solar cell of claim 1 in which the field strength at the pn 1 junction is at least about 10 4 v/cm.
Claim 4
Dependent Claim
17 words
The solar cell of claim 1 in which the n 1 n 2 junction is a heterojunction.
Claim 5
Dependent Claim
17 words
The solar cell of claim 1 in which the n 2 layer is a ternary semiconductor compound.
Claim 6
Dependent Claim
26 words
The solar cell of claim 1 including a photon window semiconductor layer superimposed on the p layer to reduce the surface recombination of the p layer.
Claim 7
Dependent Claim
35 words
The solar cell of claim 1 in which the bandgap energy of the secondary electron conduction band is not more than about 0.5 eV higher than the bandgap energy of the primary electron conduction band.
Claim 8
Dependent Claim
37 words
The solar cell of claim 1 in which the pn 1 homojunction compound is In 0 .85 Ga 0 .15 P and the n 2 layer is Al x In 1-x P where x is about 0.15.
Claim 9
Dependent Claim
34 words
The solar cell of claim 1 in which the pn 1 homojunction compound is Ga 0 .9 In 0 .1 As and the n 2 layer is In 0 .55 Ga 0 .45 P.
Claim 10
Dependent Claim
44 words
The solar cell of claim 1 in which the pn 1 homojunction compound is GaSb 0 .14 As 0 .86 and the n 2 layer is (AlGa) (AsSb) of bandgap about 1.7 eV and lattice constant about 5.724 A at the indirect-direct bandgap overlap.
Claim 11
Dependent Claim
43 words
The solar cell of claim 1 in which the pn 1 homojunction compound is ZnGeAs 2 and the n 2 layer is ZnSnP 2 graded in doping from n + ZnSnP 2 to nZnSnP 2 at its interface with the n 1 layer.
Claim 12
Dependent Claim
15 words
The solar cell of claim 1 having a substrate of single crystal n + GaAs.
Claim 13
Dependent Claim
15 words
The solar cell of claim 1 having a substrate of single crystal n + Ge.
Claim 14
Dependent Claim
15 words
The solar cell of claim 1 in which the pn 1 homojunction compound is GaAs.
Claim 15
Dependent Claim
15 words
The solar cell of claim 13 in which the p layer is zinc doped GaAs.
Claim 16
Dependent Claim
25 words
The solar cell of claim 13 in which the n 2 layer is Al x Ga 1-x As where x is between 0.1 and 0.5.
Claim 17
Dependent Claim
50 words
The solar cell of claim 1 in which the pn 1 homojunction compound is GaAs 0 .8 P 0 .2 and the n 2 layer is nIn 0 .4 Ga 0 .6 P at the n 1 interface, step graded to n + In 0 .4 Ga 0 .6 P.
Claim 18
Dependent Claim
13 words
The solar cell of claim 16 having a substrate of n + GaP.
Claim 19
Dependent Claim
90 words
The solar cell of claim 1 in which the n 1 and n 2 layers comprise a body of n 2 composition graded toward n 1 composition over a distance of about at least 200 A adjacent the p layer, the n 2 layer being adjusted in composition so that its bandgap energy is slightly less than the secondary electron conduction band bandgap energy and its lattice constant substantially matches that of the p layer, whereby "hot" electrons in the secondary electron conduction band pass into the n 2 layer.
Claim 20
Dependent Claim
31 words
The solar cell of claim 18 in which the p layer is GaAs and the n 2 layer is Al x Ga 1-x As where x is between 0.1 and 0.5.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-06-18 | 1982-12-18 | 1983-06-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-06-18 | 1986-12-18 | 1987-06-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-06-18 | 1990-12-18 | 1991-06-19 | $7700.00 | Window Closed / Lapsed |