US4161744A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Passivated semiconductor device and method of making same
Assignee: VARO-QUALITY SEMICONDUCTOR Inc
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Filing: 1977-05-23
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Granted: 1979-07-17
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Expires: 1997-05-23
Abstract
Abstract A semiconductor device is surface-passivated by a multi-layer film which includes a base coat of substantially undoped polycrystalline silicon in intimate contact with the substrate and bridging the semiconductor junction. A top coat of polycrystalline silicon is doped with oxygen and disposed overlying the base coat. The method of passivating a semiconductor device includes initial formation of a base layer of substantially undoped polycrystalline silicon from a controlled atmosphere of a silane material. This is advantageously followed by a deposition of oxygen-doped polycrystalline silicon in continuation of the atmosphere of silane material with the added introduction of a gaseous oxygen donor.
Inventors
- 👤 Theodore A. Blaske
- 👤 Ho Y. Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:32
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/147; H10P; H10P14/00; H10P14/40; H10P14/416; H10W74/141; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S257/00; Y10S257/905
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
111 words
A passivated semiconductor device comprising: a semiconductor body of monocrystalline silicon substrate material including a surface region having dopant material incorporated therein to form a diffusion layer, the boundary region between said layer and the parent substrate material defining a semiconductor junction; and a passivation film on selected portions of the semiconductor body and bridging over said junction to reside on adjacent surfaces of said layer and said parent substrate material, said film including a first, comparatively thin base coat of substantially undoped polycrystalline silicon material intimately contacting said semiconductor body, and a second coat disposed on said base coat, including a layer of said polycrystalline silicon material doped with oxygen.
Claim 2
Dependent Claim
111 words
A passivated semiconductor device comprising: a semiconductor body of monocrystalline silicon substrate material including a surface region having dopant material incorporated therein to form a diffusion layer, the boundary region between said layer and the parent substrate material defining a semiconductor junction; and a passivation film on selected portions of the semiconductor body and bridging over said junction to reside on adjacent surfaces of said layer and said parent substrate material, said film including a first, comparatively thin base coat of substantially undoped polycrystalline silicon material intimately contacting said semiconductor body, and a second coat disposed on said base coat, including a layer of said polycrystalline silicon material doped with oxygen.
Claim 3
Dependent Claim
22 words
A semiconductor device according to claim 1 wherein said second coat is at least about twice as thick as said base coat.
Claim 4
Dependent Claim
19 words
A semiconductor device according to claim 1 wherein said base coat is no greater than about 1000 angstroms thick.
Claim 5
Dependent Claim
17 words
A semiconductor device according to claim 1 which further includes an encapsulating film over said passivation film.
Claim 6
Dependent Claim
17 words
A semiconductor device according to claim 4 wherein said encapsulating film includes a layer of silicon nitride.
References Cited (Backward Citations)
US4062707A
Cited
US4080619A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-07-16 | 1983-01-15 | 1983-07-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-07-16 | 1987-01-15 | 1987-07-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-07-16 | 1991-01-15 | 1991-07-17 | $7700.00 | Window Closed / Lapsed |