US4162413A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor switch
Assignee: Mitsubishi Electric Corp
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Filing: 1977-10-19
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Granted: 1979-07-24
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Expires: 1997-10-19
Abstract
Abstract A semiconductor switch comprising: a transistor; a thyristor connected between the collector and the base of the transistor; a first control device connected to the gate of the thyristor for supplying a gate current to the thyristor and thus turning on the thyristor; and a second control device connected to the base of the transistor for supplying a base current to the transistor and thus turning off the thyristor.
Inventors
- 👤 Masahiko Akamatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 20:48
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/12; H03K17/125; H03K17/04; H03K17/041; H03K17/0412; H03K17/04126
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
151 words
A semiconductor switch comprising: a transistor having a collector, an emitter and a base, a thyristor having two main electrodes and a gate, the main electrodes being connected in between the collector and the base of the transistor, means for connecting the collector and the emitter of the transistor between an external power source and a load, control means for applying a control signal to the gate of the thyristor, means for supplying pulse current to the base of the transistor, the pulse current being supplied to the base by the pulse supplying means to turn off the thyristor by generating a reverse bias between the two main electrodes of the thyristor, a diode having an anode and a cathode, the anode of the diode being connected to one of the main electrodes of the thyristor, the cathode of the diode being connected to the other main electrode of the thyristor.
Claim 2
Dependent Claim
151 words
A semiconductor switch comprising: a transistor having a collector, an emitter and a base, a thyristor having two main electrodes and a gate, the main electrodes being connected in between the collector and the base of the transistor, means for connecting the collector and the emitter of the transistor between an external power source and a load, control means for applying a control signal to the gate of the thyristor, means for supplying pulse current to the base of the transistor, the pulse current being supplied to the base by the pulse supplying means to turn off the thyristor by generating a reverse bias between the two main electrodes of the thyristor, a diode having an anode and a cathode, the anode of the diode being connected to one of the main electrodes of the thyristor, the cathode of the diode being connected to the other main electrode of the thyristor.
Claim 3
Dependent Claim
177 words
A semiconductor switch comprising: a transistor having a collector, an emitter and a base, a thyristor having two main electrodes and a gate, the main electrodes being connected between the collector and the base of the transistor, means for connecting the collector and the emitter of the transistor between an external power source and a load, control means for applying a control signal to the gate of the thyristor, means for supplying pulse current to the base of the transistor, the forward pulse current being supplied to the base by the pulse supplying means to turn off the thyristor be generating a reverse bias between the two main electrodes of the thyristor, the voltage drop between the base and the emitter of the transistor caused by supplying the pulse current being greater than the voltage drop between the collector and the emitter caused during the supply of the pulse current in order to generate a reverse bias between the main electrodes of the thyristor. wherein the transistor and the thyristor are formed integrally on one semiconductor wafer.
Claim 4
Dependent Claim
177 words
A semiconductor switch comprising: a transistor having a collector, an emitter and a base, a thyristor having two main electrodes and a gate, the main electrodes being connected between the collector and the base of the transistor, means for connecting the collector and the emitter of the transistor between an external power source and a load, control means for applying a control signal to the gate of the thyristor, means for supplying pulse current to the base of the transistor, the forward pulse current being supplied to the base by the pulse supplying means to turn off the thyristor be generating a reverse bias between the two main electrodes of the thyristor, the voltage drop between the base and the emitter of the transistor caused by supplying the pulse current being greater than the voltage drop between the collector and the emitter caused during the supply of the pulse current in order to generate a reverse bias between the main electrodes of the thyristor. wherein the transistor and the thyristor are formed integrally on one semiconductor wafer.
Claim 5
Dependent Claim
147 words
A semiconductor switch comprising: a transistor having a collector, an emitter and a base, a thyristor having two main electrodes and a gate, the main electrodes being connected between the collector and the base of the transistor, means for connecting the collector and the emitter of the transistor between an external power source and a load, means controlling the gate of the thyrisort, means for supplying base current to the base of the transistor, the base current being supplied to the base by the base current supplying means to turn off the thyristor by causing the means controlling the gate of the thyristor to gate-reverse bias the thyristor, a diode having an anode and a cathode, the anode of the diode being connected to one of the main electrodes of the thyristor, the cathode of the diode being connected to the other main electrode of the thyristor.
Claim 6
Dependent Claim
147 words
A semiconductor switch comprising: a transistor having a collector, an emitter and a base, a thyristor having two main electrodes and a gate, the main electrodes being connected between the collector and the base of the transistor, means for connecting the collector and the emitter of the transistor between an external power source and a load, means controlling the gate of the thyrisort, means for supplying base current to the base of the transistor, the base current being supplied to the base by the base current supplying means to turn off the thyristor by causing the means controlling the gate of the thyristor to gate-reverse bias the thyristor, a diode having an anode and a cathode, the anode of the diode being connected to one of the main electrodes of the thyristor, the cathode of the diode being connected to the other main electrode of the thyristor.
Claim 7
Dependent Claim
175 words
A semiconductor switch comprising: a transistor having a collector, an emitter and a base, a thyristor having two main electrodes and a gate, the main electrodes being connected between the collector and the base of the transistor, means for connecting the collector and the emitter of the transistor between an external power source and a load, means controlling the gate of the thyristor, means for supplying base current to the base of the transistor, the base current being supplied to the base by the base current supplying means to turn off the thyristor by causing the means controlling the gate of the thyristor to gate-reverse bias the thyristor, the voltage drop between the base and the emitter of the transistor caused by supplying the forward base current being greater than the voltage drop between the collector and the emitter caused during the supply of the forward base current in order to generate a reverse bias between the main electrodes of the thyristor, wherein the transistor and the thyristor are formed integrally on one semiconductor wafer.
Claim 8
Dependent Claim
175 words
A semiconductor switch comprising: a transistor having a collector, an emitter and a base, a thyristor having two main electrodes and a gate, the main electrodes being connected between the collector and the base of the transistor, means for connecting the collector and the emitter of the transistor between an external power source and a load, means controlling the gate of the thyristor, means for supplying base current to the base of the transistor, the base current being supplied to the base by the base current supplying means to turn off the thyristor by causing the means controlling the gate of the thyristor to gate-reverse bias the thyristor, the voltage drop between the base and the emitter of the transistor caused by supplying the forward base current being greater than the voltage drop between the collector and the emitter caused during the supply of the forward base current in order to generate a reverse bias between the main electrodes of the thyristor, wherein the transistor and the thyristor are formed integrally on one semiconductor wafer.
References Cited (Backward Citations)
US3619652A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-07-23 | 1983-01-22 | 1983-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-07-23 | 1987-01-22 | 1987-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-07-23 | 1991-01-22 | 1991-07-24 | $7700.00 | Window Closed / Lapsed |