US4163984A
Expired / Lapsed
US
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Field effect transistor
Assignee: Raytheon Co
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Filing: 1978-01-27
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Granted: 1979-08-07
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Expires: 1998-01-27
Abstract
Abstract A field effect transistor having a doping concentration profile selected to linearize the relationship between the transconductance of the transistor and the level of a gate voltage fed to the gate electrode of such transistor over the operating range of such voltage. A first doping concentration profile is "spike-shaped" so that the bottom of the depletion zone and hence the transconductance is substantially invariant with gate voltage level. A second doping concentration profile, N(x), varies substantially as 1/x 3 (where x is the depth from the surface of the transistor) over the operating range of the bottom of the depletion zone.
Inventors
- 👤 Robert A. Pucel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 23:40
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D30/00; H10D30/80; H10D30/87
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
126 words
A field effect transistor comprising: (a) a semiconductor layer formed over a substrate; (b) a gate electrode disposed between a source electrode and a drain electrode, such gate, source and drain electrodes being disposed over a portion of a surface of the semiconductor layer, such gate electrode being adapted to produce a depletion zone in a portion of such semiconductor layer in response to an electrical voltage between the source and gate electrodes; (c) such semiconductor layer having a dopant in the semiconductor layer beneath the gate electrode, such dopant having a doping concentration profile selected to linearize the relationship between the transconductance and the level of the electrical voltage fed to the gate electrode to such transistor over the operating range of such electrical voltage.
Claim 2
Dependent Claim
126 words
A field effect transistor comprising: (a) a semiconductor layer formed over a substrate; (b) a gate electrode disposed between a source electrode and a drain electrode, such gate, source and drain electrodes being disposed over a portion of a surface of the semiconductor layer, such gate electrode being adapted to produce a depletion zone in a portion of such semiconductor layer in response to an electrical voltage between the source and gate electrodes; (c) such semiconductor layer having a dopant in the semiconductor layer beneath the gate electrode, such dopant having a doping concentration profile selected to linearize the relationship between the transconductance and the level of the electrical voltage fed to the gate electrode to such transistor over the operating range of such electrical voltage.
Claim 3
Dependent Claim
41 words
The field effect transistor recited in claim 1 wherein the doping concentration profile has a significantly larger doping concentration level at a predetermined depth from the surface of the transistor than the doping concentration levels from such surface to such depth.
Claim 4
Dependent Claim
15 words
The field effect transistor recited in claim 2 wherein the doping concentration profile is "spike-shaped".
Claim 5
Dependent Claim
35 words
The field effect transistor recited in claim 2 wherein the doping concentration level increases an order of magnitude with a change in depth in the order of less than 0.5 μm at the predetermined depth.
Claim 6
Dependent Claim
31 words
The field effect transistor recited in claim 1 wherein the doping concentration profile has a doping concentration level which decreases as a function of depth from the surface of the transistor.
Claim 7
Dependent Claim
37 words
The field effect transistor recited in claim 5 wherein the doping concentration profile decreases substantially inversely as the third power of depth over the operating range of the bottom edge of the depletion zone of the transistor.
Claim 8
Dependent Claim
39 words
The field effect transistor recited in claim 6 wherein the doping concentration profile N(x) is substantially related to the depth, x, from the surface of the transistor according to N(x)=N.sub.s /1+(x/δ.sub.1).sup.3 where N s and δ 1 are constants.
Claim 9
Dependent Claim
97 words
A field effect transistor comprising: (a) a semiconductor layer formed over a substrate; (b) a gate electrode disposed between a source electrode and a drain electrode, such gate, source and drain electrodes being disposed over a portion of a surface of the semiconductor layer; (c) such semiconductor layer having a dopant in the semiconductor layer beneath the gate electrode, such dopant having a doping concentration profile N(x) substantially according to: N(x)=N.sub.s /(1+(x/δ.sub.1).sup.3) where x is the depth of the concentration from the surface of the layer; δ 1 is a constant; and N s is a constant.
Claim 10
Dependent Claim
97 words
A field effect transistor comprising: (a) a semiconductor layer formed over a substrate; (b) a gate electrode disposed between a source electrode and a drain electrode, such gate, source and drain electrodes being disposed over a portion of a surface of the semiconductor layer; (c) such semiconductor layer having a dopant in the semiconductor layer beneath the gate electrode, such dopant having a doping concentration profile N(x) substantially according to: N(x)=N.sub.s /(1+(x/δ.sub.1).sup.3) where x is the depth of the concentration from the surface of the layer; δ 1 is a constant; and N s is a constant.
References Cited (Backward Citations)
USRE28500E
Cited
US4000504A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-08-06 | 1983-02-05 | 1983-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-08-06 | 1987-02-05 | 1987-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-08-06 | 1991-02-05 | 1991-08-07 | $7700.00 | Window Closed / Lapsed |