US4173674A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dielectric insulator separated substrate for semiconductor integrated circuits
Assignee: Hitachi Ltd
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Filing: 1978-03-22
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Granted: 1979-11-06
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Expires: 1998-03-22
Abstract
Abstract A dielectric insulator separated substrate comprises a plurality of monocrystalline semiconductor island regions in which circuit elements are to be formed and a support region for supporting the island regions while a dielectric film formed on the supporting region electrically separates the island regions from each other. The supporting region comprises crystalline semiconductor layers and at least one oxygen diffusion preventive film laminated alternately. The extreme outer polycrystalline semiconductor layer of the supporting region is polished to such a thickness as to prevent the substrate from being curved greatly by the wedge action due to the oxygen diffusion. Since the extreme outer polycrystalline semiconductor layer thus polished has a flat surface, the handling of the substrate is easy. The substrate devoid of any curveness deformation assures a highly accurate formation of the circuit elements in the island regions.
Inventors
- 👤 Akio Mimura
- 👤 Takaya Suzuki
- 👤 Seturo Yagiyu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 07:49
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10; Y; Y10; Y10T; Y10T428/00; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
139 words
A dielectric insulator separated substrate for semiconductor integrated circuits comprising a plurality of monocrystalline semiconductor island regions in which circuit elements are to be formed; and a support region in contact with said island regions through a dielectric film, said support region comprising alternately laminated multiple layer structure of polycrystalline semiconductor layers and at least one oxygen diffusion preventive film, said island regions being electrically isolated from each other by said dielectric film, wherein the extreme outer layer of said support region is composed of a polycrystalline semiconductor layer and has a highly polished flat surface, the thickness of said extreme outer polycrystalline semiconductor layer being represented by the formula, x≦y/40, where x represents the ultimate thickness of said extreme outer polycrystalline semiconductor layer, and y represents the entire thickness of said dielectric insulator separated substrate of 200-500 microns.
Claim 2
Dependent Claim
139 words
A dielectric insulator separated substrate for semiconductor integrated circuits comprising a plurality of monocrystalline semiconductor island regions in which circuit elements are to be formed; and a support region in contact with said island regions through a dielectric film, said support region comprising alternately laminated multiple layer structure of polycrystalline semiconductor layers and at least one oxygen diffusion preventive film, said island regions being electrically isolated from each other by said dielectric film, wherein the extreme outer layer of said support region is composed of a polycrystalline semiconductor layer and has a highly polished flat surface, the thickness of said extreme outer polycrystalline semiconductor layer being represented by the formula, x≦y/40, where x represents the ultimate thickness of said extreme outer polycrystalline semiconductor layer, and y represents the entire thickness of said dielectric insulator separated substrate of 200-500 microns.
Claim 3
Dependent Claim
49 words
The dielectric insulator separated substrate for semiconductor integrated circuits as recited in claim 1, wherein said monocrystalline semiconductor island regions are of monocrystalline silicon, said dielectric film is of silicon oxide, said polycrystalline semiconductor layers are of polycrystalline silicon, and said oxygen diffusion preventive film is of silicon oxide.
Claim 4
Dependent Claim
41 words
The dielectric insulator separated substrate for semiconductor integrated circuits as recited in claim 1, wherein said oxygen diffusion preventive film is of one of a silicon oxide film, a silicon nitride film and an aluminum oxide film or a combination thereof.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-11-05 | 1983-05-07 | 1983-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-11-05 | 1987-05-07 | 1987-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-11-05 | 1991-05-07 | 1991-11-06 | $7700.00 | Window Closed / Lapsed |