US4176004A
Expired / Lapsed
US
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Method for modifying the characteristics of a semiconductor fusions
Assignee: Westinghouse Electric Corp
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Filing: 1978-08-21
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Granted: 1979-11-27
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Expires: 1998-08-21
Abstract
Abstract A method for etching semiconductor fusions to change their electrical characteristic, especially to reduce the firing current of thyristor fusions, to a predetermined desired value is disclosed. The etching is accomplished by subjecting fusions comprised of a body of semiconductor material, for example, silicon, including an anode emitter region therein and an anode electrode affixed thereto, an anode base region, a cathode base region and a gate electrode affixed thereto, and a cathode emitter region having a cathode electrode affixed thereto, to a plasma etchant comprising a mixture of CF 4 and a carrier gas such for example, nitrogen, for a predetermined time interval. Following this etching cycle the firing current of the fusions is measured. Any fusions having a firing current in excess of the desired value at the end of the first etching cycle are subjected to another etching cycle to further reduce the firing current. The etching and measurement cycle is repeated for a predetermined number of cycles. Any fusions having a firing current in excess of the desired value after the predetermined number of etch cycles are scraped.
Inventors
- 👤 Joseph E. Johnson
- 👤 Edward Dombrowski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:33
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
208 words
A method for etching a thyristor fusion to lower the firing current to a desired value, consisting of the steps of: (a) disposing at least one thyristor fusion in a plasma etching chamber, said fusion comprising a body of semiconductor material including an anode emitter region therein and an anode electrode affixed thereto, an anode base region, a cathode base region and a gate electrode affixed thereto with portions of said body of semiconductor material exposed in an area adjacent to said gate electrode and a cathode emitter region having a cathode electrode affixed thereto, each of at least one thyristor fusion having a firing current in excess of a desired predetermined value; (b) establishing a predetermined flow rate of a selected gas mixture through said plasma etching chamber; (c) establishing an RF field in said etching chamber whereby said selected gas ionizes to produce ions which react with said exposed portions of said body of semiconductor material to produce gaseous etching by-products; (d) thereby etching said exposed portions of said body of semiconductor material; (e) continuing said etching for a predetermined time interval; and (f) removing said at least one fusion from said plasma etching chamber and measuring the firing current of said at least one fusion.
Claim 2
Independent Claim
208 words
A method for etching a thyristor fusion to lower the firing current to a desired value, consisting of the steps of: (a) disposing at least one thyristor fusion in a plasma etching chamber, said fusion comprising a body of semiconductor material including an anode emitter region therein and an anode electrode affixed thereto, an anode base region, a cathode base region and a gate electrode affixed thereto with portions of said body of semiconductor material exposed in an area adjacent to said gate electrode and a cathode emitter region having a cathode electrode affixed thereto, each of at least one thyristor fusion having a firing current in excess of a desired predetermined value; (b) establishing a predetermined flow rate of a selected gas mixture through said plasma etching chamber; (c) establishing an RF field in said etching chamber whereby said selected gas ionizes to produce ions which react with said exposed portions of said body of semiconductor material to produce gaseous etching by-products; (d) thereby etching said exposed portions of said body of semiconductor material; (e) continuing said etching for a predetermined time interval; and (f) removing said at least one fusion from said plasma etching chamber and measuring the firing current of said at least one fusion.
Claim 3
Dependent Claim
93 words
The method of etching a thyristor fusion to lower its firing current in accordance with claim 1, further including the steps of: (a) separating said fusions after step f has been completed into two groups, said first group comprising fusion having a firing current equal to or lower than said desired predetermined value, said second group comprising fusion having a firing current in excess of said desired predetermined value; and (b) repeating steps (a) through (e) as specified in claim 1 to further reduce the firing current of said second group of fusion.
Claim 4
Dependent Claim
53 words
A method for etching a thyristor fusions to lower the firing current to a desired value in accordance with claim 1 wherein said ions which react with exposed portions of said body of semiconductor material are fluorine ions formed by portions of said selected gas ionizing in the presence of said RF field.
Claim 5
Dependent Claim
34 words
A method for etching a thyristor fusion to lower the firing current to a desired value, in accordance with claim 3 wherein said selected gas comprises a predetermined mixture of CF 4 and nitrogen.
Claim 6
Dependent Claim
52 words
A method for etching a thyristor fusion to lower the firing current to a desired value in accordance with claim 4 wherein said predetermined mixture of CF 4 and nitrogen comprises in the range of 4.0×10 4 parts per million to 6.0×10 5 parts per million CF 4 with the remainder nitrogen.
Claim 7
Dependent Claim
42 words
A method for etching a thyristor fusion to lower the firing current to a derived value in accordance with claim 5 wherein said predetermined mixture of CF 4 and nitrogen comprises 5.1×10 5 parts per million CF 4 with the remainder nitrogen.
Claim 8
Independent Claim
135 words
A method for etching a thyristor fusion which includes a body of semiconductor including exposed portions and an organic coating overlying the edge of said body of semiconductor to modify the firing current of said fusion, comprising the steps of: (a) positioning the said thyristor fusion in a plasma etching chamber; (b) establishing an atmosphere comprising a predetermined mixture of CF 4 and nitrogen in said etching chamber; (c) establishing an RF field in said plasma etching chamber, said RF field ionizing said CF 4 to produce fluorine ions, said fluorine ions etching exposed portions of said body of semiconductor material; (d) removing said thyristor from said etching chamber and measuring the firing current; and (e) repeating steps a through c as required to reduce the firing current of said thyristor to an acceptable value.
Claim 9
Independent Claim
135 words
A method for etching a thyristor fusion which includes a body of semiconductor including exposed portions and an organic coating overlying the edge of said body of semiconductor to modify the firing current of said fusion, comprising the steps of: (a) positioning the said thyristor fusion in a plasma etching chamber; (b) establishing an atmosphere comprising a predetermined mixture of CF 4 and nitrogen in said etching chamber; (c) establishing an RF field in said plasma etching chamber, said RF field ionizing said CF 4 to produce fluorine ions, said fluorine ions etching exposed portions of said body of semiconductor material; (d) removing said thyristor from said etching chamber and measuring the firing current; and (e) repeating steps a through c as required to reduce the firing current of said thyristor to an acceptable value.
Claim 10
Independent Claim
181 words
A method for etching a fusion to change its electrical characteristics, consisting of the steps of: (a) disposing said semiconductor fusion in a plasma etching chamber, said semiconductor device comprising a body of semiconductor material having at least first and second regions of opposite conductivity type therein and at least first and second electrodes respectively affixed to said first and second regions with portions of said body or semiconductor material exposed; (b) establishing a predetermined flow rate of a selected gas mixture through said plasma etching chamber; (c) establishing an RF field in said etching chamber whereby said selected gas ionizes to produce ions which react with said exposed portions of said body of semiconductor material to produce gaseous etching by-products thereby etching said exposed portions of said body of semiconductor material; (d) continuing said etching for a predetermined time interval to selectively remove said exposed portions of said body of semiconductor material to change the current flow pattern from said first electrode through said first region to said second region thereby selectively changing the electrical characteristics of said semiconductor fusion.
Claim 11
Independent Claim
181 words
A method for etching a fusion to change its electrical characteristics, consisting of the steps of: (a) disposing said semiconductor fusion in a plasma etching chamber, said semiconductor device comprising a body of semiconductor material having at least first and second regions of opposite conductivity type therein and at least first and second electrodes respectively affixed to said first and second regions with portions of said body or semiconductor material exposed; (b) establishing a predetermined flow rate of a selected gas mixture through said plasma etching chamber; (c) establishing an RF field in said etching chamber whereby said selected gas ionizes to produce ions which react with said exposed portions of said body of semiconductor material to produce gaseous etching by-products thereby etching said exposed portions of said body of semiconductor material; (d) continuing said etching for a predetermined time interval to selectively remove said exposed portions of said body of semiconductor material to change the current flow pattern from said first electrode through said first region to said second region thereby selectively changing the electrical characteristics of said semiconductor fusion.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-11-26 | 1983-05-28 | 1983-11-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-11-26 | 1987-05-28 | 1987-11-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-11-26 | 1991-05-28 | 1991-11-27 | $7700.00 | Window Closed / Lapsed |