Patent US3930614A successfully refreshed from Google Patents.
US4196507A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating MNOS transistors having implanted channels
Assignee: RCA Corp
•
Filing: 1978-08-25
•
Granted: 1980-04-08
•
Expires: 1998-08-25
Abstract
Abstract The method of forming an MNOS transistor having a stepped channel oxide region utilizes intentional undercutting of the oxide in the channel region to provide a self-aligned mask for ion implanting a region of the same conductivity type, but more heavily doped which will be centrally located beneath the thin portion of the channel region in order to increase the threshold window of the device while saving a photomask operation.
Inventors
- 👤 Burchell B. Baptiste
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:56
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10D; H10D30/00; H10D30/60; H10D30/69; H10P30/202; H10P30/204; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/944
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
256 words
A method of making a MNOS transistor comprising the steps of: (a) selecting a body of semiconductor material of a first conductivity type; (b) forming a source and a drain spaced therefrom of opposite conductivity type in said body extending to a surface of said body; (c) forming an oxide layer over the surface of said body at least between said source and said drain; (d) applying a masking layer over the surface of said oxide; (e) forming an opening in said masking layer between said source and said drain which exposes a portion of said oxide layer; (f) forming a second opening in the exposed portion of said oxide, said second opening being wider than said opening in said masking layer, whereby the edges of said oxide will be laterally displaced beneath the edges of the opening in said masking layer; then (g) implanting ions of said first conductivity type through said opening in said masking layer whereby a region of the same conductivity type but having a greater conductivity will be formed beneath said opening in said masking layer, said region being narrower there and entirely within said second opening; (h) removing said masking layer; (i) forming a thin oxide over the exposed portion of said surface; (j) applying a silicon nitride layer over said oxide layer at least between said source and said drain; (k) forming a conductive gate over said silicon nitride layer at least between said source and said drain; and (l) providing electrical contacts to said source and said drain.
Claim 2
Independent Claim
256 words
A method of making a MNOS transistor comprising the steps of: (a) selecting a body of semiconductor material of a first conductivity type; (b) forming a source and a drain spaced therefrom of opposite conductivity type in said body extending to a surface of said body; (c) forming an oxide layer over the surface of said body at least between said source and said drain; (d) applying a masking layer over the surface of said oxide; (e) forming an opening in said masking layer between said source and said drain which exposes a portion of said oxide layer; (f) forming a second opening in the exposed portion of said oxide, said second opening being wider than said opening in said masking layer, whereby the edges of said oxide will be laterally displaced beneath the edges of the opening in said masking layer; then (g) implanting ions of said first conductivity type through said opening in said masking layer whereby a region of the same conductivity type but having a greater conductivity will be formed beneath said opening in said masking layer, said region being narrower there and entirely within said second opening; (h) removing said masking layer; (i) forming a thin oxide over the exposed portion of said surface; (j) applying a silicon nitride layer over said oxide layer at least between said source and said drain; (k) forming a conductive gate over said silicon nitride layer at least between said source and said drain; and (l) providing electrical contacts to said source and said drain.
Claim 3
Dependent Claim
44 words
The method of claim 1 wherein said step of forming a second opening comprises the step of etching the exposed portions of said oxide layer for a time sufficient to expose the surface of said body and to etch laterally beneath said masking layer.
Claim 4
Dependent Claim
19 words
The method of claim 2 wherein said body of semiconductor material is selected to be of N type silicon.
Claim 5
Dependent Claim
38 words
The method of claim 3 wherein said oxide layer is a silicon dioxide layer and said step of forming an oxide layer is accomplished by thermally growing a silicon dioxide layer on the surface of said silicon body.
Claim 6
Dependent Claim
51 words
The method of claim 4 wherein said step of applying a masking layer is accomplished by applying a layer of photoresist material over the surface of said oxide and said step of forming an opening in said masking layer is accomplished by photolithographically defining and developing areas of said photoresist layer.
Claim 7
Dependent Claim
27 words
The method of claim 5 wherein said step of implanting ions is accomplished by ion implanting donor ions selected from the group consisting of phosphorus and arsenic.
Claim 8
Dependent Claim
35 words
The method of claim 6 wherein said step of forming a thermal oxide is accomplished by thermally growing a silicon dioxide layer on the surface of said body to a thickness of about 20 A.
Claim 9
Dependent Claim
34 words
The method of claim 7 wherein said step of applying a silicon nitride layer is accomplished by combining silane and arsenic in a deposition reactor heated to about 800° C. for about 30 minutes.
Claim 10
Dependent Claim
34 words
The method of claim 8 wherein said step of forming a conductive gate is accomplished by applying a metal layer over the surface of said nitride layer and then photolithographically defining said metal layer.
Claim 11
Dependent Claim
43 words
The method of claim 9 wherein said step of providing electrical contacts is accomplished by photolithographically defining openings to expose said source and said drain, applying a metal layer which contacts said source and said drain, and then photolithographically defining said metal layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-04-08 | 1983-10-08 | 1984-04-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-04-08 | 1987-10-08 | 1988-04-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-04-08 | 1991-10-08 | 1992-04-08 | $7700.00 | Window Closed / Lapsed |