US4205227A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Single junction emitter array
Assignee: Texas Instruments Inc
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Filing: 1978-01-23
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Granted: 1980-05-27
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Expires: 1998-01-23
Abstract
Abstract An apparatus for translating information in one form to electrical signals for driving a single junction emitter light source is disclosed. For example, a device for scanning radiant energy includes a detector array for converting detected invisible electromagnetic energy emanating from a body into electrical signals representative thereof, an electrical signal processing means coupled to the detector array for processing the electrical signals thereof for display, and a single junction emitter array for producing visible light indicative of the invisible electromagnetic energy emanating from the detected body. The single junction emitter array comprises a substrate of light emitting semiconductor material forming a region of n-type conductivity, a region of p-type conductivity formed in the substrate to form with the n-type conductivity region a continuous p-n junction, a plurality of spaced contacts in contact with the p-type conductivity region, and a corresponding plurality of biasing circuits connected to the contacts. The biased contacts coact with the continuous p-n junction to form a plurality of light emitter elements for producing, without scan lines, visible light indicative of the visible electromagnetic energy emanating from the body.
Inventors
- 👤 Bruce S. Reed
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 13:58
CPC Classifications
H; H10; H10H; H10H29/00; H10H29/10; H10H29/14; G; G08; G08B; G08B13/00; G08B13/18; G08B13/189; G08B13/19; H10F; H10F55/00; H10F55/10; H10F55/15
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
217 words
A light emitter array comprising: (a) a substrate of a first type conductivity semiconductor material having opposing first and second major surfaces, said substrate forming a region of said first type conductivity; (b) a layer of insulating material selectively covering the first major surface of the substrate; (c) an elongated region of a second-type conductivity semiconductor material formed in the first major surface of the substrate of the first type conductivity semiconductor material said region being defined by the layer of insulating material, said regions of first and second type conductivities semiconductor materials forming a continuous elongated p-n junction; (d) a plurality of selectively spaced contacts; said plurality of contacts being mounted on the layer of insulating material selectively covering the first major surface of the substrate and having portions thereof in spaced electrical contact with the region of second type semiconductor material and at least one contact in electrical contact with the second major surface of the substrate to form a plurality of substantially independent light emitting areas along the p-n junctions; and (e) biasing means connected to the plurality of contacts for biasing the junction formed by the first and second type conductivities semiconductor material to produce an array of adjacent light emitting areas for producing a display of a scene free of scan lines.
Claim 2
Dependent Claim
217 words
A light emitter array comprising: (a) a substrate of a first type conductivity semiconductor material having opposing first and second major surfaces, said substrate forming a region of said first type conductivity; (b) a layer of insulating material selectively covering the first major surface of the substrate; (c) an elongated region of a second-type conductivity semiconductor material formed in the first major surface of the substrate of the first type conductivity semiconductor material said region being defined by the layer of insulating material, said regions of first and second type conductivities semiconductor materials forming a continuous elongated p-n junction; (d) a plurality of selectively spaced contacts; said plurality of contacts being mounted on the layer of insulating material selectively covering the first major surface of the substrate and having portions thereof in spaced electrical contact with the region of second type semiconductor material and at least one contact in electrical contact with the second major surface of the substrate to form a plurality of substantially independent light emitting areas along the p-n junctions; and (e) biasing means connected to the plurality of contacts for biasing the junction formed by the first and second type conductivities semiconductor material to produce an array of adjacent light emitting areas for producing a display of a scene free of scan lines.
Claim 3
Dependent Claim
154 words
In an infrared detection system, a light emitter array comprising: (a) a substrate of n-type conductivity semiconductor material having opposing first and second major surfaces; (b) a surface passivation layer and an oxide mask layer, said layers selectively covering portions of the first major surface of the substrate to form an uncovered portion; (c) a diffused stripe of a p-type conductivity material diffused in the uncovered portion of the first major portion of the substrate to form an elongated p-n junction; and (d) a plurality of selectively spaced contacts formed on the oxide mask layer and in contact with the diffused stripe of p-type semiconductor material, and at least one contact in electrical contact with the second major surface of the substrate said contacts for connection to a source of power for providing from a single p-n junction an array of light emitting diodes whereby each diode is responsive substantially independent of adjacent diodes.
Claim 4
Dependent Claim
154 words
In an infrared detection system, a light emitter array comprising: (a) a substrate of n-type conductivity semiconductor material having opposing first and second major surfaces; (b) a surface passivation layer and an oxide mask layer, said layers selectively covering portions of the first major surface of the substrate to form an uncovered portion; (c) a diffused stripe of a p-type conductivity material diffused in the uncovered portion of the first major portion of the substrate to form an elongated p-n junction; and (d) a plurality of selectively spaced contacts formed on the oxide mask layer and in contact with the diffused stripe of p-type semiconductor material, and at least one contact in electrical contact with the second major surface of the substrate said contacts for connection to a source of power for providing from a single p-n junction an array of light emitting diodes whereby each diode is responsive substantially independent of adjacent diodes.
Claim 5
Dependent Claim
183 words
A light emitter array comprising: (a) a substrate of a first-type conductivity semiconductor material forming a region of said first type conductivity; (b) a region of a second-type conductivity semiconductor material formed in the substrate of the first-type conductivity semiconductor material, said regions of first and second type conductivity semiconductor materials forming a continuous elongated p-n junction, wherein the region of second type conductivity semiconductor material has a notched edge configuration with the first type conductivity semiconductor material filling the notches, said notches constituting the spacing between the plurality of spaced contacts which coact with the contacts to provide a light emitting area of uniform thickness; (c) a plurality of contacts, said plurality of contacts having portions thereof in spaced electrical contact with the region of second-type semiconductor material to form a plurality of substantially independent light emitting areas on the p-n junction; and (d) biasing means connected to said plurality contacts for biasing the junction formed by the first and second type conductivity semiconductor material to produce an array of adjacent light emitting areas for producing a display free of scan lines.
Claim 6
Dependent Claim
183 words
A light emitter array comprising: (a) a substrate of a first-type conductivity semiconductor material forming a region of said first type conductivity; (b) a region of a second-type conductivity semiconductor material formed in the substrate of the first-type conductivity semiconductor material, said regions of first and second type conductivity semiconductor materials forming a continuous elongated p-n junction, wherein the region of second type conductivity semiconductor material has a notched edge configuration with the first type conductivity semiconductor material filling the notches, said notches constituting the spacing between the plurality of spaced contacts which coact with the contacts to provide a light emitting area of uniform thickness; (c) a plurality of contacts, said plurality of contacts having portions thereof in spaced electrical contact with the region of second-type semiconductor material to form a plurality of substantially independent light emitting areas on the p-n junction; and (d) biasing means connected to said plurality contacts for biasing the junction formed by the first and second type conductivity semiconductor material to produce an array of adjacent light emitting areas for producing a display free of scan lines.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-05-27 | 1983-11-26 | 1984-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-05-27 | 1987-11-26 | 1988-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-05-27 | 1991-11-26 | 1992-05-27 | $7700.00 | Window Closed / Lapsed |